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authorDavid Hendricks <dhendrix@chromium.org>2013-08-29 14:05:21 -0700
committerIsaac Christensen <isaac.christensen@se-eng.com>2014-08-12 22:19:27 +0200
commit122b6d6ce694cd55087b4956780b2bbde8ccc6fe (patch)
treee1bb08bf318a5cba449997d849d9b5788ccff02c
parent72a42886505f54e81f437b618af1ab57e95c4b71 (diff)
downloadcoreboot-122b6d6ce694cd55087b4956780b2bbde8ccc6fe.tar.xz
exynos5420/pit: re-factor membaseconfig0/1 usage
membaseconfig0/1 are utterly dependent on the mainboard's particular DRAM setup. This defines their values in the mem_timings struct for pit. Signed-off-by: David Hendricks <dhendrix@chromium.org> Old-Change-Id: Ifd782d1229b2418f8ddbf0bcb3f45cc828ac34b0 Reviewed-on: https://chromium-review.googlesource.com/167488 Commit-Queue: David Hendricks <dhendrix@chromium.org> Tested-by: David Hendricks <dhendrix@chromium.org> Reviewed-by: ron minnich <rminnich@chromium.org> (cherry picked from commit 80eebd5bc0dbb9fabf81f46c25dcd5c5d5747579) exynos5420: necessary updates for DRAM This updates DRAM usage for Exynos5420 so that we can actually use 3.5GB: - Memory chips used with Exynos5420 may have 16 row address lines. Signed-off-by: David Hendricks <dhendrix@chromium.org> Old-Change-Id: I86d1a96d0d1a028587f7655f8de5a2e52165e9d2 Reviewed-on: https://chromium-review.googlesource.com/167489 Commit-Queue: David Hendricks <dhendrix@chromium.org> Tested-by: David Hendricks <dhendrix@chromium.org> Reviewed-by: ron minnich <rminnich@chromium.org> (cherry picked from commit 04bbaf5d8e125166dd689f656d5b37776be01fb1) Squashed two related commits. Change-Id: I4e45bc8a446715897ec21b0160701152fa6b226b Signed-off-by: Isaac Christensen <isaac.christensen@se-eng.com> Reviewed-on: http://review.coreboot.org/6613 Tested-by: build bot (Jenkins) Reviewed-by: Stefan Reinauer <stefan.reinauer@coreboot.org>
-rw-r--r--src/cpu/samsung/exynos5420/dmc_init_ddr3.c24
-rw-r--r--src/cpu/samsung/exynos5420/setup.h16
-rw-r--r--src/mainboard/google/pit/memory.c7
3 files changed, 23 insertions, 24 deletions
diff --git a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c
index 1126dca130..1d7b8a8adb 100644
--- a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c
+++ b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c
@@ -145,21 +145,15 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset)
update_reset_dll(drex0, DDR_MODE_DDR3);
update_reset_dll(drex1, DDR_MODE_DDR3);
- /* Set Base Address:
- * 0x2000_0000 ~ 0x5FFF_FFFF
- * 0x6000_0000 ~ 0x9FFF_FFFF
- */
- /* MEMBASECONFIG0 */
- val = DMC_MEMBASECONFIGx_CHIP_BASE(DMC_CHIP_BASE_0) |
- DMC_MEMBASECONFIGx_CHIP_MASK(DMC_CHIP_MASK);
- writel(val, &tzasc0->membaseconfig0);
- writel(val, &tzasc1->membaseconfig0);
-
- /* MEMBASECONFIG1 */
- val = DMC_MEMBASECONFIGx_CHIP_BASE(DMC_CHIP_BASE_1) |
- DMC_MEMBASECONFIGx_CHIP_MASK(DMC_CHIP_MASK);
- writel(val, &tzasc0->membaseconfig1);
- writel(val, &tzasc1->membaseconfig1);
+ /* MEMBASECONFIG0 (CS0) */
+ writel(mem->membaseconfig0, &tzasc0->membaseconfig0);
+ writel(mem->membaseconfig0, &tzasc1->membaseconfig0);
+
+ /* MEMBASECONFIG1 (CS1) */
+ if (mem->chips_per_channel == 2) {
+ writel(mem->membaseconfig1, &tzasc0->membaseconfig1);
+ writel(mem->membaseconfig1, &tzasc1->membaseconfig1);
+ }
/* Memory Channel Inteleaving Size
* Exynos5420 Channel interleaving = 128 bytes
diff --git a/src/cpu/samsung/exynos5420/setup.h b/src/cpu/samsung/exynos5420/setup.h
index 3bd36b2e75..950c2c6f85 100644
--- a/src/cpu/samsung/exynos5420/setup.h
+++ b/src/cpu/samsung/exynos5420/setup.h
@@ -136,6 +136,7 @@ struct exynos5_phy_control;
#define DMC_MEMCONFIGx_CHIP_COL_10 (3 << 8)
#define DMC_MEMCONFIGx_CHIP_ROW_14 (2 << 4)
#define DMC_MEMCONFIGx_CHIP_ROW_15 (3 << 4)
+#define DMC_MEMCONFIGx_CHIP_ROW_16 (4 << 4)
#define DMC_MEMCONFIGx_CHIP_BANK_8 (3 << 0)
#define DMC_MEMBASECONFIGx_CHIP_BASE(x) (x << 16)
@@ -767,15 +768,12 @@ struct exynos5_phy_control;
#define DPWRDN_EN (1 << 1)
#define DSREF_EN (1 << 5)
-/* As we use channel interleaving, therefore value of the base address
- * register must be set as half of the bus base address
- * RAM start addess is 0x2000_0000 which means chip_base is 0x20, so
- * we need to set half 0x10 to the membaseconfigx registers
- * see exynos5420 UM section 17.17.3.21 for more
- */
-#define DMC_CHIP_BASE_0 0x10
-#define DMC_CHIP_BASE_1 0x50
-#define DMC_CHIP_MASK 0x7C0
+/* AXI base address mask */
+#define DMC_CHIP_MASK_256MB 0x7f0
+#define DMC_CHIP_MASK_512MB 0x7e0
+#define DMC_CHIP_MASK_1GB 0x7c0
+#define DMC_CHIP_MASK_2GB 0x780
+#define DMC_CHIP_MASK_4GB 0x700
#define MEMBASECONFIG_CHIP_MASK_VAL 0x7E0
#define MEMBASECONFIG_CHIP_MASK_OFFSET 0
diff --git a/src/mainboard/google/pit/memory.c b/src/mainboard/google/pit/memory.c
index 4ac3d0c999..0c30773bdd 100644
--- a/src/mainboard/google/pit/memory.c
+++ b/src/mainboard/google/pit/memory.c
@@ -90,6 +90,13 @@ const struct mem_timings mem_timings = {
DMC_MEMCONTROL_BL_8 |
DMC_MEMCONTROL_PZQ_DISABLE |
DMC_MEMCONTROL_MRR_BYTE_7_0,
+ /*
+ * For channel interleaving, the chip_base needs to be set to
+ * half the bus address. So for a base address of 0x2000_0000,
+ * the chip_base value is 0x20 without interleaving and 0x10
+ * with channel interleaving. See note in section 17.14.
+ */
+ .membaseconfig0 = (0x10 << 16) | DMC_CHIP_MASK_1GB,
.memconfig = DMC_MEMCONFIG_CHIP_MAP_SPLIT |
DMC_MEMCONFIGx_CHIP_COL_10 |
DMC_MEMCONFIGx_CHIP_ROW_15 |