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authorDavid Hendricks <dhendrix@chromium.org>2013-08-26 15:12:12 -0700
committerIsaac Christensen <isaac.christensen@se-eng.com>2014-08-12 22:07:26 +0200
commit42b1b8069c35a4e86772b600ea0264503bf20470 (patch)
tree9e53449e38a72e21a10002ed67e1c753ca66afe0 /src/cpu/samsung
parent4610f0e64f92639e6992dc242dabbfbfc1cb7453 (diff)
downloadcoreboot-42b1b8069c35a4e86772b600ea0264503bf20470.tar.xz
Exynos5420: ddr3: fine tuning the DDR3 timing values
Fine tuning DDR timings value for better stability * Changed Data Driver Strength from 34 ohms to 30 ohms, expected to enhance signal integrity. * Changed DQ signal from 0xf to 0x1f000f, to keep default value safe. * Changed mrs[2] and added new mrs direct command for setting WL/RL without resetting DLL. * Added explicit reset value write in phy_con0 instead of just setting a bit, to ensure that reset happens. * Added DREX automatic control for ctrl_pd in none read memory state. This is ported from: https://gerrit.chromium.org/gerrit/61405 Signed-off-by: David Hendricks <dhendrix@chromium.org> Change-Id: I59e96e6dede7b49c6572548aca664d82ad110bb1 Reviewed-on: https://chromium-review.googlesource.com/66995 Reviewed-by: ron minnich <rminnich@chromium.org> Commit-Queue: David Hendricks <dhendrix@chromium.org> Tested-by: David Hendricks <dhendrix@chromium.org> (cherry picked from commit ec34b711c6d270672c56d45c370ca14c0aa27ca3) Signed-off-by: Isaac Christensen <isaac.christensen@se-eng.com> Reviewed-on: http://review.coreboot.org/6611 Reviewed-by: David Hendricks <dhendrix@chromium.org> Tested-by: build bot (Jenkins) Reviewed-by: Paul Menzel <paulepanter@users.sourceforge.net>
Diffstat (limited to 'src/cpu/samsung')
-rw-r--r--src/cpu/samsung/exynos5420/dmc.h2
-rw-r--r--src/cpu/samsung/exynos5420/dmc_init_ddr3.c34
-rw-r--r--src/cpu/samsung/exynos5420/setup.h2
3 files changed, 22 insertions, 16 deletions
diff --git a/src/cpu/samsung/exynos5420/dmc.h b/src/cpu/samsung/exynos5420/dmc.h
index c974db28e1..89fac429b7 100644
--- a/src/cpu/samsung/exynos5420/dmc.h
+++ b/src/cpu/samsung/exynos5420/dmc.h
@@ -291,7 +291,7 @@ enum mem_manuf {
};
enum {
- MEM_TIMINGS_MSR_COUNT = 4,
+ MEM_TIMINGS_MSR_COUNT = 5,
};
diff --git a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c
index e236e99022..a758433487 100644
--- a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c
+++ b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c
@@ -99,8 +99,8 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset)
*/
val = (0x7 << CA_CK_DRVR_DS_OFFSET) | (0x7 << CA_CKE_DRVR_DS_OFFSET) |
(0x7 << CA_CS_DRVR_DS_OFFSET) | (0x7 << CA_ADR_DRVR_DS_OFFSET);
- val |= (0x6 << DA_3_DS_OFFSET) | (0x6 << DA_2_DS_OFFSET) |
- (0x6 << DA_1_DS_OFFSET) | (0x6 << DA_0_DS_OFFSET);
+ val |= (0x7 << DA_3_DS_OFFSET) | (0x7 << DA_2_DS_OFFSET) |
+ (0x7 << DA_1_DS_OFFSET) | (0x7 << DA_0_DS_OFFSET);
writel(val, &phy0_ctrl->phy_con39);
writel(val, &phy1_ctrl->phy_con39);
@@ -112,8 +112,12 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset)
clrbits_le32(&phy1_ctrl->phy_con16, ZQ_CLK_DIV_EN);
/* DQ Signal */
- writel(mem->phy0_pulld_dqs, &phy0_ctrl->phy_con14);
- writel(mem->phy1_pulld_dqs, &phy1_ctrl->phy_con14);
+ val = readl(&phy0_ctrl->phy_con14);
+ val |= mem->phy0_pulld_dqs;
+ writel(val, &phy0_ctrl->phy_con14);
+ val = readl(&phy1_ctrl->phy_con14);
+ val |= mem->phy1_pulld_dqs;
+ writel(val, &phy1_ctrl->phy_con14);
val = MEM_TERM_EN | PHY_TERM_EN;
writel(val, &drex0->phycontrol0);
@@ -225,8 +229,8 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset)
if (mem->gate_leveling_enable) {
- setbits_le32(&phy0_ctrl->phy_con0, CTRL_ATGATE);
- setbits_le32(&phy1_ctrl->phy_con0, CTRL_ATGATE);
+ writel(PHY_CON0_RESET_VAL, &phy0_ctrl->phy_con0);
+ writel(PHY_CON0_RESET_VAL, &phy1_ctrl->phy_con0);
setbits_le32(&phy0_ctrl->phy_con0, P0_CMD_EN);
setbits_le32(&phy1_ctrl->phy_con0, P0_CMD_EN);
@@ -236,12 +240,6 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset)
writel(val, &phy0_ctrl->phy_con2);
writel(val, &phy1_ctrl->phy_con2);
- val = PHY_CON0_RESET_VAL;
- val |= P0_CMD_EN;
- val |= BYTE_RDLVL_EN;
- writel(val, &phy0_ctrl->phy_con0);
- writel(val, &phy1_ctrl->phy_con0);
-
val = readl(&phy0_ctrl->phy_con1);
val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET);
writel(val, &phy0_ctrl->phy_con1);
@@ -339,12 +337,18 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset)
writel(mem->memcontrol, &drex0->memcontrol);
writel(mem->memcontrol, &drex1->memcontrol);
- /* Set DMC Concontrol and enable auto-refresh counter */
+ /*
+ * Set DMC Concontrol: Enable auto-refresh counter, provide
+ * read data fetch cycles and enable DREX auto set powerdown
+ * for input buffer of I/O in none read memory state.
+ */
writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) |
- (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT),
+ (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)|
+ DMC_CONCONTROL_IO_PD_CON(0x2),
&drex0->concontrol);
writel(mem->concontrol | (mem->aref_en << CONCONTROL_AREF_EN_SHIFT) |
- (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT),
+ (mem->rd_fetch << CONCONTROL_RD_FETCH_SHIFT)|
+ DMC_CONCONTROL_IO_PD_CON(0x2),
&drex1->concontrol);
/* Enable Clock Gating Control for DMC
diff --git a/src/cpu/samsung/exynos5420/setup.h b/src/cpu/samsung/exynos5420/setup.h
index 9dc49d8d10..3bd36b2e75 100644
--- a/src/cpu/samsung/exynos5420/setup.h
+++ b/src/cpu/samsung/exynos5420/setup.h
@@ -181,6 +181,8 @@ struct exynos5_phy_control;
#define CLK_DIV_FSYS1_VAL 0x04f13c4f
#define CLK_DIV_FSYS2_VAL 0x041d0000
+#define DMC_CONCONTROL_IO_PD_CON(x) (x << 6)
+
/* CLK_DIV_CPU1 */
#define HPM_RATIO 0x2
#define COPY_RATIO 0x0