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authorStefan Reinauer <stepan@coresystems.de>2010-03-31 14:47:43 +0000
committerStefan Reinauer <stepan@openbios.org>2010-03-31 14:47:43 +0000
commit64ed2b73451de4b655b3fdda0ff42825a165c317 (patch)
tree0faaae313a9a9edbf8b33f56fc18830ba14aa75f /src/northbridge/via/cn700
parent5a1f5970857a5ad1fda0cf9d5945192408bf537b (diff)
downloadcoreboot-64ed2b73451de4b655b3fdda0ff42825a165c317.tar.xz
Drop \r\n and \n\r as both print_XXX and printk now do this internally.
Only some assembler files still have \r\n ... Can we move that part to C completely? Signed-off-by: Stefan Reinauer <stepan@coresystems.de> Acked-by: Stefan Reinauer <stepan@coresystems.de> git-svn-id: svn://svn.coreboot.org/coreboot/trunk@5342 2b7e53f0-3cfb-0310-b3e9-8179ed1497e1
Diffstat (limited to 'src/northbridge/via/cn700')
-rw-r--r--src/northbridge/via/cn700/raminit.c16
1 files changed, 8 insertions, 8 deletions
diff --git a/src/northbridge/via/cn700/raminit.c b/src/northbridge/via/cn700/raminit.c
index bddb4448fe..72fb0c5a26 100644
--- a/src/northbridge/via/cn700/raminit.c
+++ b/src/northbridge/via/cn700/raminit.c
@@ -183,7 +183,7 @@ static void sdram_set_size(const struct mem_controller *ctrl)
}
if (result == 0xff)
- die("DRAM module size too big, not supported by CN700\r\n");
+ die("DRAM module size too big, not supported by CN700\n");
pci_write_config8(ctrl->d0f3, 0x40, result);
pci_write_config8(ctrl->d0f3, 0x48, 0x00);
@@ -389,30 +389,30 @@ static void sdram_enable(device_t dev, unsigned long rank_address)
u8 i;
/* 1. Apply NOP. */
- PRINT_DEBUG_MEM("RAM Enable 1: Apply NOP\r\n");
+ PRINT_DEBUG_MEM("RAM Enable 1: Apply NOP\n");
do_ram_command(dev, RAM_COMMAND_NOP);
udelay(100);
read32(rank_address + 0x10);
/* 2. Precharge all. */
udelay(400);
- PRINT_DEBUG_MEM("RAM Enable 2: Precharge all\r\n");
+ PRINT_DEBUG_MEM("RAM Enable 2: Precharge all\n");
do_ram_command(dev, RAM_COMMAND_PRECHARGE);
read32(rank_address + 0x10);
/* 3. Mode register set. */
- PRINT_DEBUG_MEM("RAM Enable 4: Mode register set\r\n");
+ PRINT_DEBUG_MEM("RAM Enable 4: Mode register set\n");
do_ram_command(dev, RAM_COMMAND_MRS);
read32(rank_address + 0x120000); /* EMRS DLL Enable */
read32(rank_address + 0x800); /* MRS DLL Reset */
/* 4. Precharge all again. */
- PRINT_DEBUG_MEM("RAM Enable 2: Precharge all\r\n");
+ PRINT_DEBUG_MEM("RAM Enable 2: Precharge all\n");
do_ram_command(dev, RAM_COMMAND_PRECHARGE);
read32(rank_address + 0x0);
/* 5. Perform 8 refresh cycles. Wait tRC each time. */
- PRINT_DEBUG_MEM("RAM Enable 3: CBR\r\n");
+ PRINT_DEBUG_MEM("RAM Enable 3: CBR\n");
do_ram_command(dev, RAM_COMMAND_CBR);
for (i = 0; i < 8; i++) {
read32(rank_address + 0x20);
@@ -420,7 +420,7 @@ static void sdram_enable(device_t dev, unsigned long rank_address)
}
/* 6. Mode register set. */
- PRINT_DEBUG_MEM("RAM Enable 4: Mode register set\r\n");
+ PRINT_DEBUG_MEM("RAM Enable 4: Mode register set\n");
/* Safe value for now, BL=8, WR=5, CAS=4 */
/*
* (E)MRS values are from the BPG. No direct explanation is given, but
@@ -433,7 +433,7 @@ static void sdram_enable(device_t dev, unsigned long rank_address)
read32(rank_address + 0x120020); /* EMRS OCD Calibration Mode Exit */
/* 8. Normal operation */
- PRINT_DEBUG_MEM("RAM Enable 5: Normal operation\r\n");
+ PRINT_DEBUG_MEM("RAM Enable 5: Normal operation\n");
do_ram_command(dev, RAM_COMMAND_NORMAL);
read32(rank_address + 0x30);
}