diff options
author | Ionela Voinescu <ionela.voinescu@imgtec.com> | 2015-05-21 13:11:51 +0100 |
---|---|---|
committer | Stefan Reinauer <stefan.reinauer@coreboot.org> | 2015-06-12 20:19:01 +0200 |
commit | 1185c109e488c0706441527591376929809a24b2 (patch) | |
tree | dfc2aa9bbdfb0c7847f205f0f461dd1cb23cf647 /src/soc/imgtec | |
parent | 07f8d8e63fd0bcbafcc3eafac0e49ce632aa34b7 (diff) | |
download | coreboot-1185c109e488c0706441527591376929809a24b2.tar.xz |
pistachio: Use passive windowing as DQS gating scheme
Switching from active windowing DQS gating scheme to
passive windowing mode resolves boot stability issues
on chips found to have memory corruption issues during
boot or memory tests.
It was tested on Pistachio bring up board where DDR is
initialized properly and ramstage executed correctly;
We have cycled units over 12,000 times with no boot errors.
This option was chosen over the alternative of using
passive windowing mode for DQS training and after switching
back to active mode, as this option was recommended by
Synopsys. Using the alternative would give different
timing values during training that were not longer accurate
during normal activity.
Change-Id: Ie604eddc0a9a982b2f89198f44deb88a01b7b322
Signed-off-by: Ionela Voinescu <ionela.voinescu@imgtec.com>
Reviewed-on: http://review.coreboot.org/10528
Tested-by: build bot (Jenkins)
Reviewed-by: Stefan Reinauer <stefan.reinauer@coreboot.org>
Diffstat (limited to 'src/soc/imgtec')
-rw-r--r-- | src/soc/imgtec/pistachio/ddr2_init.c | 23 |
1 files changed, 23 insertions, 0 deletions
diff --git a/src/soc/imgtec/pistachio/ddr2_init.c b/src/soc/imgtec/pistachio/ddr2_init.c index 9c94d8b2f9..dd09321fb0 100644 --- a/src/soc/imgtec/pistachio/ddr2_init.c +++ b/src/soc/imgtec/pistachio/ddr2_init.c @@ -97,6 +97,7 @@ #define DDR_PCTL_CCFG1_OFFSET (0x048C) #define DDR_PHY 0xB8180800 +#define DDRPHY_PGCR_OFFSET (0x0008) #define DDRPHY_DCR_OFFSET (0x0030) #define DDRPHY_MR_OFFSET (0x0040) #define DDRPHY_EMR_OFFSET (0x0044) @@ -318,6 +319,28 @@ int init_ddr2(void) * 29:19 : tDINIT1 DRAM Init time 400ns 160 Dec 0xA0 */ write32(DDR_PHY + DDRPHY_PTR1_OFFSET, 0x05013880); + /* DQS gating configuration: passive windowing mode */ + /* + * PGCR: PHY General cofiguration register + * 0 ITM DDR mode: 0 + * 1 DQS gading configuration: passive windowing 1 + * 2 DQS drift compensation: not supported in passive windowing 0 + * 4:3 DQS drift limit 0 + * 8:5 Digital test output select 0 + * 11:9 CK Enable: one bit for each 3 CK pair: 0x7 + * 13:12 CK Disable values: 0x2 + * 14 CK Invert 0 + * 15 IO loopback 0 + * 17:16 I/O DDR mode 0 + * 21:18 Ranks enable by training: 0xF + * 23:22 Impedance clock divider select 0x2 + * 24 Power down disable 1 + * 28:25 Refresh during training 0 + * 29 loopback DQS shift 0 + * 30 loopback DQS gating 0 + * 31 loopback mode 0 + */ + write32(DDR_PHY + DDRPHY_PGCR_OFFSET, 0x01BC2E02); /* PGSR : Wait for INIT/DLL/Z Done from Power on Reset */ if (wait_for_completion(DDR_PHY + DDRPHY_PGSR_OFFSET, 0x00000007)) return DDR_TIMEOUT; |