diff options
author | David Hendricks <dhendrix@chromium.org> | 2013-08-23 15:25:07 -0700 |
---|---|---|
committer | Isaac Christensen <isaac.christensen@se-eng.com> | 2014-08-12 22:18:53 +0200 |
commit | 72a42886505f54e81f437b618af1ab57e95c4b71 (patch) | |
tree | d2cc82ce1d6236860c3c31af9e5916cfeadf21ee /src | |
parent | dd1aab95a6eb74eac7ea0463f7933d186dbd0efb (diff) | |
download | coreboot-72a42886505f54e81f437b618af1ab57e95c4b71.tar.xz |
exynos5420: ddr3: Switch from 4G setup to 2G setup on exynos5420
This changes the number of chip selects that we configure from 2 to 1.
On current setups with (x16 memory 4Gbit chips) that means that we're
at 2GByte.
Technically we should add a second setting in the ares_ddr3_timings
and select between the two of the based on board strappings. That
would make the CONFIG_RUN_TIME_BANK_NUMBER work properly. I've
changed the ddr3_mem_ctrl_init() so it should handle that, but I'm not
actually doing the board strapping read right now.
This change means that accesses to 0xA0000000 - 0xFFFFFFFF on 2G
systems will no longer put the system in a messed up state (leading to
a hang). It also prevents some of the weird boot behavior that we've
seen that comes and goes depending on U-Boot alignment. See
<http://crosbug.com/p/20577>.
This patch was ported from: https://gerrit.chromium.org/gerrit/66117
Signed-off-by: David Hendricks <dhendrix@chromium.org>
Change-Id: Ib4cfe420aac30bd817438f06d01e8671afc4a27d
Reviewed-on: https://chromium-review.googlesource.com/167210
Commit-Queue: David Hendricks <dhendrix@chromium.org>
Tested-by: David Hendricks <dhendrix@chromium.org>
Reviewed-by: ron minnich <rminnich@chromium.org>
(cherry picked from commit 0ea574243058068702e3f6bc7355098745d16880)
Signed-off-by: Isaac Christensen <isaac.christensen@se-eng.com>
Reviewed-on: http://review.coreboot.org/6612
Tested-by: build bot (Jenkins)
Diffstat (limited to 'src')
-rw-r--r-- | src/cpu/samsung/exynos5420/dmc_init_ddr3.c | 36 | ||||
-rw-r--r-- | src/mainboard/google/pit/memory.c | 6 |
2 files changed, 24 insertions, 18 deletions
diff --git a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c index a758433487..1126dca130 100644 --- a/src/cpu/samsung/exynos5420/dmc_init_ddr3.c +++ b/src/cpu/samsung/exynos5420/dmc_init_ddr3.c @@ -44,7 +44,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset) struct exynos5_dmc *drex0, *drex1; struct exynos5_tzasc *tzasc0, *tzasc1; u32 val, nLockR, nLockW_phy0, nLockW_phy1; - int i; + int i, chip; phy0_ctrl = (struct exynos5_phy_control *)EXYNOS5_DMC_PHY0_BASE; phy1_ctrl = (struct exynos5_phy_control *)EXYNOS5_DMC_PHY1_BASE; @@ -218,12 +218,14 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset) * Send auto refresh command for DRAM refresh. */ for (i = 0; i < 128; i++) { - writel(DIRECT_CMD_REFA, &drex0->directcmd); - writel(DIRECT_CMD_REFA | (0x1 << DIRECT_CMD_CHIP_SHIFT), - &drex0->directcmd); - writel(DIRECT_CMD_REFA, &drex1->directcmd); - writel(DIRECT_CMD_REFA | (0x1 << DIRECT_CMD_CHIP_SHIFT), - &drex1->directcmd); + for (chip = 0; chip < mem->chips_to_configure; chip++) { + writel(DIRECT_CMD_REFA | + (chip << DIRECT_CMD_CHIP_SHIFT), + &drex0->directcmd); + writel(DIRECT_CMD_REFA | + (chip << DIRECT_CMD_CHIP_SHIFT), + &drex1->directcmd); + } } } @@ -263,10 +265,12 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset) writel(nLockR, &phy1_ctrl->phy_con12); val = (0x3 << DIRECT_CMD_BANK_SHIFT) | 0x4; - writel(val, &drex0->directcmd); - writel(val | (0x1 << DIRECT_CMD_CHIP_SHIFT), &drex0->directcmd); - writel(val, &drex1->directcmd); - writel(val | (0x1 << DIRECT_CMD_CHIP_SHIFT), &drex1->directcmd); + for (chip = 0; chip < mem->chips_to_configure; chip++) { + writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), + &drex0->directcmd); + writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), + &drex1->directcmd); + } setbits_le32(&phy0_ctrl->phy_con2, RDLVL_GATE_EN); setbits_le32(&phy1_ctrl->phy_con2, RDLVL_GATE_EN); @@ -316,10 +320,12 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, int interleave_size, int reset) writel(0, &phy1_ctrl->phy_con14); val = (0x3 << DIRECT_CMD_BANK_SHIFT); - writel(val, &drex0->directcmd); - writel(val | (0x1 << DIRECT_CMD_CHIP_SHIFT), &drex0->directcmd); - writel(val, &drex1->directcmd); - writel(val | (0x1 << DIRECT_CMD_CHIP_SHIFT), &drex1->directcmd); + for (chip = 0; chip < mem->chips_to_configure; chip++) { + writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), + &drex0->directcmd); + writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), + &drex1->directcmd); + } /* Common Settings for Leveling */ val = PHY_CON12_RESET_VAL; diff --git a/src/mainboard/google/pit/memory.c b/src/mainboard/google/pit/memory.c index ddd7aa0ff1..4ac3d0c999 100644 --- a/src/mainboard/google/pit/memory.c +++ b/src/mainboard/google/pit/memory.c @@ -86,7 +86,7 @@ const struct mem_timings mem_timings = { DMC_MEMCONTROL_ADD_LAT_PALL_CYCLE(0) | DMC_MEMCONTROL_MEM_TYPE_DDR3 | DMC_MEMCONTROL_MEM_WIDTH_32BIT | - DMC_MEMCONTROL_NUM_CHIP_2 | + DMC_MEMCONTROL_NUM_CHIP_1 | DMC_MEMCONTROL_BL_8 | DMC_MEMCONTROL_PZQ_DISABLE | DMC_MEMCONTROL_MRR_BYTE_7_0, @@ -104,8 +104,8 @@ const struct mem_timings mem_timings = { DMC_CONCONTROL_AREF_EN_DISABLE | DMC_CONCONTROL_IO_PD_CON_DISABLE, .dmc_channels = 1, - .chips_per_channel = 2, - .chips_to_configure = 2, + .chips_per_channel = 1, + .chips_to_configure = 1, .send_zq_init = 1, .gate_leveling_enable = 1, }; |