diff options
Diffstat (limited to 'src/vendorcode/amd/agesa/f10/Proc/Mem/Tech/DDR3/mttwl3.c')
| -rwxr-xr-x | src/vendorcode/amd/agesa/f10/Proc/Mem/Tech/DDR3/mttwl3.c | 603 |
1 files changed, 603 insertions, 0 deletions
diff --git a/src/vendorcode/amd/agesa/f10/Proc/Mem/Tech/DDR3/mttwl3.c b/src/vendorcode/amd/agesa/f10/Proc/Mem/Tech/DDR3/mttwl3.c new file mode 100755 index 0000000000..c276b075c1 --- /dev/null +++ b/src/vendorcode/amd/agesa/f10/Proc/Mem/Tech/DDR3/mttwl3.c @@ -0,0 +1,603 @@ +/** + * @file + * + * mttwl3.c + * + * Technology Phy assisted write levelization for DDR3 + * + * @xrefitem bom "File Content Label" "Release Content" + * @e project: AGESA + * @e sub-project: (Mem/Tech/DDR3) + * @e \$Revision: 44323 $ @e \$Date: 2010-12-22 01:24:58 -0700 (Wed, 22 Dec 2010) $ + * + **/ +/***************************************************************************** +* +* Copyright (c) 2011, Advanced Micro Devices, Inc. +* All rights reserved. +* +* Redistribution and use in source and binary forms, with or without +* modification, are permitted provided that the following conditions are met: +* * Redistributions of source code must retain the above copyright +* notice, this list of conditions and the following disclaimer. +* * Redistributions in binary form must reproduce the above copyright +* notice, this list of conditions and the following disclaimer in the +* documentation and/or other materials provided with the distribution. +* * Neither the name of Advanced Micro Devices, Inc. nor the names of +* its contributors may be used to endorse or promote products derived +* from this software without specific prior written permission. +* +* THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" AND +* ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED +* WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE +* DISCLAIMED. IN NO EVENT SHALL ADVANCED MICRO DEVICES, INC. BE LIABLE FOR ANY +* DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES +* (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; +* LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND +* ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT +* (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE OF THIS +* SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. +* +* *************************************************************************** +* +*/ + +/* + *---------------------------------------------------------------------------- + * MODULES USED + * + *---------------------------------------------------------------------------- + */ + + + +#include "AGESA.h" +#include "Ids.h" +#include "mm.h" +#include "mn.h" +#include "mu.h" +#include "mt.h" +#include "mtsdi3.h" +#include "merrhdl.h" +#include "OptionMemory.h" +#include "PlatformMemoryConfiguration.h" +#include "GeneralServices.h" +#include "Filecode.h" +#define FILECODE PROC_MEM_TECH_DDR3_MTTWL3_FILECODE +/*---------------------------------------------------------------------------- + * DEFINITIONS AND MACROS + * + *---------------------------------------------------------------------------- + */ + +/*---------------------------------------------------------------------------- + * TYPEDEFS AND STRUCTURES + * + *---------------------------------------------------------------------------- + */ + +/*---------------------------------------------------------------------------- + * PROTOTYPES OF LOCAL FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + +BOOLEAN +STATIC +MemTWriteLevelizationHw3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Pass + ); + +VOID +STATIC +MemTWLPerDimmHw3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm, + IN UINT8 Pass + ); + +VOID +STATIC +MemTPrepareDIMMs3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 TargetDIMM, + IN BOOLEAN Wl + ); + +VOID +STATIC +MemTProcConfig3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm, + IN UINT8 Pass + ); + +VOID +STATIC +MemTBeginWLTrain3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm + ); + +/*---------------------------------------------------------------------------- + * EXPORTED FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function executes first pass of Phy assisted write levelization + * for a specific node (DDR800). + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +MemTWriteLevelizationHw3Pass1 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + return MemTWriteLevelizationHw3 (TechPtr, 1); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function executes second pass of Phy assisted write levelization + * for a specific node (DDR1066 and above). + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +MemTWriteLevelizationHw3Pass2 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + // If current speed is higher than start-up speed, do second pass of WL + if (TechPtr->NBPtr->DCTPtr->Timings.Speed > TechPtr->NBPtr->StartupSpeed) { + return MemTWriteLevelizationHw3 (TechPtr, 2); + } + return TRUE; +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function prepares for Phy assisted training. + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +MemTPreparePhyAssistedTraining ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + // Disable auto refresh by configuring F2x[1, 0]8C[DisAutoRefresh] = 1. + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFDisAutoRefresh, 1); + // Disable ZQ calibration short command by configuring F2x[1, 0]94[ZqcsInterval] = 00b. + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFZqcsInterval, 0); + return (BOOLEAN) (TechPtr->NBPtr->MCTPtr->ErrCode < AGESA_FATAL); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function revert to normal settings when exiting from Phy assisted training. + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +MemTExitPhyAssistedTraining ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + // 13.Program F2x[1, 0]8C[DisAutoRefresh] = 0. + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFDisAutoRefresh, 0); + // 14.Program F2x[1, 0]94[ZqcsInterval] to the proper interval for the current memory configuration. + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFZqcsInterval, 2); + return (BOOLEAN) (TechPtr->NBPtr->MCTPtr->ErrCode < AGESA_FATAL); +} + +/*---------------------------------------------------------------------------- + * LOCAL FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function executed hardware based write levelization for a specific die + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] Pass - Pass number (1 (400Mhz) or 2 (>400Mhz)) + * + * @pre Auto refresh and ZQCL must be disabled + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +STATIC +MemTWriteLevelizationHw3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Pass + ) +{ + MEM_NB_BLOCK *NBPtr; + DCT_STRUCT *DCTPtr; + UINT8 Dct; + UINT8 Dimm; + + NBPtr = TechPtr->NBPtr; + + IDS_HDT_CONSOLE ("!\nStart write leveling\n"); + AGESA_TESTPOINT (TpProcMemWriteLevelizationTraining, &(NBPtr->MemPtr->StdHeader)); + // Begin DQS Write timing training + for (Dct = 0; Dct < NBPtr->DctCount; Dct++) { + NBPtr->SwitchDCT (NBPtr, Dct); + IDS_HDT_CONSOLE ("!\tDct %d\n", Dct); + DCTPtr = NBPtr->DCTPtr; + + //training for each Dimm + for (Dimm = 0; Dimm < MAX_DIMMS_PER_CHANNEL; Dimm++) { + if ((DCTPtr->Timings.CsEnabled & ((UINT16)3 << (Dimm << 1))) != 0) { + + IDS_HDT_CONSOLE ("!\t\tCS %d\n", Dimm << 1); + MemTWLPerDimmHw3 (TechPtr, Dimm, Pass); + } + } + } + IDS_HDT_CONSOLE ("End write leveling\n\n"); + return (BOOLEAN) (NBPtr->MCTPtr->ErrCode < AGESA_FATAL); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function initializes per DIMM write levelization + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] Dimm - DIMM to be trained + * @param[in] Pass - Pass number (1 (400Mhz) or 2 (>400Mhz)) + * + */ + +VOID +STATIC +MemTWLPerDimmHw3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm, + IN UINT8 Pass + ) +{ + MEM_DATA_STRUCT *MemPtr; + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + MemPtr = NBPtr->MemPtr; + + ASSERT (Dimm < MAX_DIMMS_PER_CHANNEL); + + // 1. Specify the target Dimm that is to be trained by programming + // F2x[1, 0]9C_x08[TrDimmSel]. + NBPtr->SetBitField (NBPtr, BFTrDimmSel, Dimm); + + // 2. Prepare the DIMMs for write levelization using DDR3-defined + // MR commands. + MemTPrepareDIMMs3 (TechPtr, Dimm, TRUE); + + // 3. After the DIMMs are configured, BIOS waits 40 MEMCLKs to + // satisfy DDR3-defined internal DRAM timing. + MemUWait10ns (10, MemPtr); + + // 4. Configure the processor's DDR phy for write levelization training: + MemTProcConfig3 (TechPtr, Dimm, Pass); + + // 5. Begin write levelization training + MemTBeginWLTrain3 (TechPtr, Dimm); + + // 7. Program the target Dimm back to normal operation + MemTPrepareDIMMs3 (TechPtr, Dimm, FALSE); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function prepares the DIMMS for Write Levelization + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] TargetDIMM - DIMM to be trained + * @param[in] Wl - Indicates if WL mode should be enabled + * + */ + +VOID +STATIC +MemTPrepareDIMMs3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 TargetDIMM, + IN BOOLEAN Wl + ) +{ + MEM_NB_BLOCK *NBPtr; + UINT8 ChipSel; + + NBPtr = TechPtr->NBPtr; + + AGESA_TESTPOINT (TpProcMemWlPrepDimms, &(NBPtr->MemPtr->StdHeader)); + ASSERT (TargetDIMM < MAX_DIMMS_PER_CHANNEL); + for (ChipSel = 0; ChipSel < MAX_CS_PER_CHANNEL; ChipSel++) { + if ((NBPtr->DCTPtr->Timings.CsPresent & ((UINT16)1 << ChipSel)) != 0) { + if (Wl) { + // Program WrLvOdt + NBPtr->SetBitField (NBPtr, BFWrLvOdt, NBPtr->ChannelPtr->PhyWLODT[ChipSel >> 1]); + } + NBPtr->SetBitField (NBPtr, BFMrsChipSel, ChipSel); + // Set MR1 to F2x7C[MrsAddress], F2x7C[MrsBank]=1 + MemTEMRS13 (TechPtr, Wl, TargetDIMM); + // Send command + NBPtr->SendMrsCmd (NBPtr); + // Set MR2 to F2x7C[MrsAddress], F2x7C[MrsBank]=1 + MemTEMRS23 (TechPtr); + // Send command + NBPtr->SendMrsCmd (NBPtr); + } + } +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function programs seed values for Write Levelization + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] Dimm - DIMM to be trained + * @param[in] Pass - Pass for WL training (1 - 400Mhz or 2 - >400Mhz) + * + */ + +VOID +STATIC +MemTProcConfig3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm, + IN UINT8 Pass + ) +{ + DIE_STRUCT *MCTPtr; + CH_DEF_STRUCT *ChannelPtr; + MEM_NB_BLOCK *NBPtr; + UINT16 WrDqsDly; + // Memclk Delay incurred by register. + UINT8 MemClkRegDly; + UINT8 ByteLane; + UINT8 DefaultSeed; + UINT8 CurrentSeed; + UINT8 *Seed; + UINT8 RCW2; + UINT16 Speed; + + NBPtr = TechPtr->NBPtr; + MCTPtr = NBPtr->MCTPtr; + ChannelPtr = TechPtr->NBPtr->ChannelPtr; + + AGESA_TESTPOINT (TpProcMemWlConfigDimms, &(NBPtr->MemPtr->StdHeader)); + RCW2 = ChannelPtr->CtrlWrd02[Dimm]; + Speed = TechPtr->NBPtr->DCTPtr->Timings.Speed; + + IDS_HDT_CONSOLE ("\n\t\t\tSeeds: "); + // Program an initialization Value to registers F2x[1, 0]9C_x[51:50] and F2x[1, 0]9C_x52 to set + // the gross and fine delay for all the byte lane fields. If the target frequency is different than 400MHz, + // BIOS must execute two training passes for each Dimm. For pass 1 at a 400MHz MEMCLK frequency, + // use an initial total delay value. + if (Pass == 1) { + // Get the default value of seed + DefaultSeed = 0x1A; + if (MCTPtr->Status[SbRegistered]) { + DefaultSeed = ((RCW2 & BIT0) == 0) ? 0x41 : 0x51; + } + + if (Speed == DDR667_FREQUENCY) { + DefaultSeed = (UINT8) ((DefaultSeed * 333 + 399) / 400); //round up + } + ASSERT (Speed >= DDR667_FREQUENCY); + + // Get platform override seed + Seed = (UINT8 *) FindPSOverrideEntry (NBPtr->RefPtr->PlatformMemoryConfiguration, PSO_WL_SEED, MCTPtr->SocketId, ChannelPtr->ChannelID); + + for (ByteLane = 0; ByteLane < 9; ByteLane++) { + // This includes ECC as byte 8 + CurrentSeed = ((Seed != NULL) ? Seed[ByteLane] : DefaultSeed); + NBPtr->SetTrainDly (NBPtr, AccessPhRecDly, DIMM_BYTE_ACCESS (Dimm, ByteLane), CurrentSeed); + ChannelPtr->WrDqsDlys[Dimm * TechPtr->DlyTableWidth () + ByteLane] = CurrentSeed; + IDS_HDT_CONSOLE ("%02x ", CurrentSeed); + } + } else { + //10.Multiply the previously saved delay values in Pass 1, step #5 by (target frequency)/400 to find + //the gross and fine delay initialization values at the target frequency. Use these values as the initial + //seed values when executing Pass 2, step #4. + for (ByteLane = 0; ByteLane < 9; ByteLane++) { + // This includes ECC as byte 8 + WrDqsDly = ChannelPtr->WrDqsDlys[Dimm * TechPtr->DlyTableWidth () + ByteLane]; + // + // For Registered Dimms + // + if (MCTPtr->Status[SbRegistered]) { + MemClkRegDly = ((RCW2 & BIT0) == 0) ? 0x20 : 0x30; + WrDqsDly = (UINT16) (MemClkRegDly + ((((UINT32) WrDqsDly - MemClkRegDly) * Speed) / TechPtr->PrevSpeed)); + } else { + // + // Unbuffered Dimms + // + WrDqsDly = (UINT16) (((UINT32) WrDqsDly * Speed) / TechPtr->PrevSpeed); + } + + ChannelPtr->WrDqsDlys[Dimm * TechPtr->DlyTableWidth () + ByteLane] = (UINT8) WrDqsDly; + + if (NBPtr->IsSupported[WLSeedAdjust]) { + // Adjust seed to avoid overflowing PRE for the case SeedGross >= 3 + if (WrDqsDly >= 0x60) { + if ((WrDqsDly & 0x20) != 0) { + // If (SeedGross is odd) then SeedPreGross = 1 + WrDqsDly = (WrDqsDly & 0x1F) | 0x20; + } else { + // If (SeedGross is even) then SeedPreGross = 2 + WrDqsDly = (WrDqsDly & 0x1F) | 0x40; + } + } + } + + NBPtr->SetTrainDly (NBPtr, AccessPhRecDly, DIMM_BYTE_ACCESS (Dimm, ByteLane), WrDqsDly); + IDS_HDT_CONSOLE ("%02x ", WrDqsDly); + } + } + IDS_HDT_CONSOLE ("\n"); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function begins WL training for a specific DIMM + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] Dimm - DIMM to be trained + * + */ + +VOID +STATIC +MemTBeginWLTrain3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 Dimm + ) +{ + MEM_DATA_STRUCT *MemPtr; + DIE_STRUCT *MCTPtr; + MEM_NB_BLOCK *NBPtr; + UINT8 ByteLane; + UINT8 Seed; + UINT8 Delay; + + NBPtr = TechPtr->NBPtr; + MemPtr = NBPtr->MemPtr; + MCTPtr = NBPtr->MCTPtr; + // Assert ODT pins for write leveling + NBPtr->SetBitField (NBPtr, BFWrLvOdtEn, 1); + + // Wait 10 MEMCLKs to allow for ODT signal settling. + MemUWait10ns (3, MemPtr); + + IDS_HDT_CONSOLE ("\t\t\tWrtLvTrEn = 1\n"); + // Program F2x[1, 0]9C_x08[WrtLlTrEn]=1. + NBPtr->SetBitField (NBPtr, BFWrtLvTrEn, 1); + + // Wait 200 MEMCLKs. If executing pass 2, wait 32 MEMCLKs. + MemUWait10ns (50, MemPtr); + + // Program F2x[1, 0]9C_x08[WrtLlTrEn]=0. + NBPtr->SetBitField (NBPtr, BFWrtLvTrEn, 0); + + // Read from registers F2x[1, 0]9C_x[51:50] and F2x[1, 0]9C_x52 to get the gross and fine Delay settings + // for the target Dimm and save these values. + IDS_HDT_CONSOLE ("\t\t\t PRE: "); + for (ByteLane = 0; ByteLane < (MCTPtr->Status[SbEccDimms] ? 9 : 8) ; ByteLane++) { + // This includes ECC as byte 8 + Seed = NBPtr->ChannelPtr->WrDqsDlys[(Dimm * TechPtr->DlyTableWidth ()) + ByteLane]; + Delay = (UINT8)NBPtr->GetTrainDly (NBPtr, AccessPhRecDly, DIMM_BYTE_ACCESS (Dimm, ByteLane)); +// IDS_HDT_CONSOLE ("%v1%02x ", Delay); + IDS_HDT_CONSOLE ("%02x ", Delay); + + if ((Delay > (Seed + 0x20)) || (Seed > (Delay + 0x20))) { + // + // If PRE comes back with more than Seed +/- 0x20, then this is an + // unexpected condition. Log the condition. + // + PutEventLog (AGESA_ERROR, MEM_ERROR_WL_PRE_OUT_OF_RANGE, NBPtr->Node, NBPtr->Dct, NBPtr->Channel, ((Seed << 8) + Delay), &NBPtr->MemPtr->StdHeader); + } + if ((NBPtr->IsSupported[WLSeedAdjust]) && (Seed >= 0x60)) { + // Recover WrDqsGrossDly: + // WrDqsGrossDly = SeedGross + PhRecGrossDlyByte - SeedPreGross + if ((Seed & 0x20) != 0) { + // If (SeedGross is odd) then SeedPreGross = 1 + Delay += (Seed & 0xE0) - 0x20; + } else { + // If (SeedGross is even) then SeedPreGross = 2 + Delay += (Seed & 0xE0) - 0x40; + } + } else if (((Seed >> 5) == 0) && ((Delay >> 5) == 3)) { + IDS_OPTION_HOOK (IDS_CHECK_NEGATIVE_WL, &Delay, &(TechPtr->NBPtr->MemPtr->StdHeader)); + // If seed has gross delay of 0 and PRE has gross delay of 3, + // then round the total delay of TxDqs to 0. + Delay = 0; + } + NBPtr->SetTrainDly (NBPtr, AccessWrDqsDly, DIMM_BYTE_ACCESS (Dimm, ByteLane), Delay); + NBPtr->ChannelPtr->WrDqsDlys[(Dimm * TechPtr->DlyTableWidth ()) + ByteLane] = Delay; +// IDS_HDT_CONSOLE ("%v2%02x ", Delay); + } +#if 0 + IDS_HDT_CONSOLE ("%v0"); + IDS_HDT_CONSOLE ("\t\t\tPRE: %vh1\n"); + IDS_HDT_CONSOLE ("\t\t\tWrDqs: %vh2\n\n"); +#endif + IDS_HDT_CONSOLE ("\n\t\t\tWrDqs: "); + for (ByteLane = 0; ByteLane < (MCTPtr->Status[SbEccDimms] ? 9 : 8); ByteLane++) { + IDS_HDT_CONSOLE ("%02x ", NBPtr->ChannelPtr->WrDqsDlys[(Dimm * TechPtr->DlyTableWidth ()) + ByteLane]); + } + IDS_HDT_CONSOLE("\n\n"); + + // Disable write leveling ODT pins + NBPtr->SetBitField (NBPtr, BFWrLvOdtEn, 0); + + // Wait 10 MEMCLKs to allow for ODT signal settling. + MemUWait10ns (3, MemPtr); + +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function programs register after Phy assisted training is finish. + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + * @return TRUE - No fatal error occurs. + * @return FALSE - Fatal error occurs. + */ + +BOOLEAN +MemTExitPhyAssistedTrainingClient3 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFRxPtrInitReq, 1); + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFDisDllShutdownSR, 1); + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFEnterSelfRef, 1); + TechPtr->NBPtr->PollBitField (TechPtr->NBPtr, BFEnterSelfRef, 0, PCI_ACCESS_TIMEOUT, TRUE); + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFDbeGskMemClkAlignMode, 2); + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFExitSelfRef, 1); + TechPtr->NBPtr->PollBitField (TechPtr->NBPtr, BFExitSelfRef, 0, PCI_ACCESS_TIMEOUT, TRUE); + TechPtr->NBPtr->BrdcstSet (TechPtr->NBPtr, BFDisDllShutdownSR, 0); + return (BOOLEAN) (TechPtr->NBPtr->MCTPtr->ErrCode < AGESA_FATAL); +} + |