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diff --git a/src/vendorcode/amd/agesa/f14/Proc/Mem/Tech/DDR3/mtsdi3.c b/src/vendorcode/amd/agesa/f14/Proc/Mem/Tech/DDR3/mtsdi3.c
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+/* $NoKeywords:$ */
+/**
+ * @file
+ *
+ * mtsdi3.c
+ *
+ * Technology Software DRAM Init for DDR3
+ *
+ * @xrefitem bom "File Content Label" "Release Content"
+ * @e project: AGESA
+ * @e sub-project: (Mem/Tech/DDR3)
+ * @e \$Revision: 37303 $ @e \$Date: 2010-09-02 03:43:36 +0800 (Thu, 02 Sep 2010) $
+ *
+ **/
+/*
+ *****************************************************************************
+ *
+ * Copyright (c) 2011, Advanced Micro Devices, Inc.
+ * All rights reserved.
+ *
+ * Redistribution and use in source and binary forms, with or without
+ * modification, are permitted provided that the following conditions are met:
+ * * Redistributions of source code must retain the above copyright
+ * notice, this list of conditions and the following disclaimer.
+ * * Redistributions in binary form must reproduce the above copyright
+ * notice, this list of conditions and the following disclaimer in the
+ * documentation and/or other materials provided with the distribution.
+ * * Neither the name of Advanced Micro Devices, Inc. nor the names of
+ * its contributors may be used to endorse or promote products derived
+ * from this software without specific prior written permission.
+ *
+ * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" AND
+ * ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
+ * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
+ * DISCLAIMED. IN NO EVENT SHALL ADVANCED MICRO DEVICES, INC. BE LIABLE FOR ANY
+ * DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES
+ * (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES;
+ * LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND
+ * ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT
+ * (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE OF THIS
+ * SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
+ *
+ * ***************************************************************************
+ *
+ */
+
+
+/*
+ *----------------------------------------------------------------------------
+ * MODULES USED
+ *
+ *----------------------------------------------------------------------------
+ */
+
+
+
+#include "AGESA.h"
+#include "Ids.h"
+#include "mm.h"
+#include "mn.h"
+#include "mu.h"
+#include "mt.h"
+#include "mt3.h"
+#include "mtsdi3.h"
+#include "mtrci3.h"
+#include "merrhdl.h"
+#include "Filecode.h"
+CODE_GROUP (G1_PEICC)
+RDATA_GROUP (G1_PEICC)
+#define FILECODE PROC_MEM_TECH_DDR3_MTSDI3_FILECODE
+/*----------------------------------------------------------------------------
+ * DEFINITIONS AND MACROS
+ *
+ *----------------------------------------------------------------------------
+ */
+
+/*----------------------------------------------------------------------------
+ * TYPEDEFS AND STRUCTURES
+ *
+ *----------------------------------------------------------------------------
+ */
+
+/*----------------------------------------------------------------------------
+ * PROTOTYPES OF LOCAL FUNCTIONS
+ *
+ *----------------------------------------------------------------------------
+ */
+
+/*----------------------------------------------------------------------------
+ * EXPORTED FUNCTIONS
+ *
+ *----------------------------------------------------------------------------
+ */
+
+
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This function initiates software DRAM init for both DCTs
+ * at the same time.
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ *
+ */
+
+BOOLEAN
+MemTDramInitSw3 (
+ IN OUT MEM_TECH_BLOCK *TechPtr
+ )
+{
+ UINT8 Dct;
+ UINT8 ChipSel;
+ UINT32 Dummy;
+
+ MEM_DATA_STRUCT *MemPtr;
+ DIE_STRUCT *MCTPtr;
+ MEM_NB_BLOCK *NBPtr;
+
+ NBPtr = TechPtr->NBPtr;
+ MemPtr = NBPtr->MemPtr;
+ MCTPtr = NBPtr->MCTPtr;
+
+ IDS_HDT_CONSOLE (MEM_STATUS, "\nStart Dram Init\n");
+ // 3.Program F2x[1,0]7C[EnDramInit]=1
+ IDS_HDT_CONSOLE (MEM_FLOW, "\tEnDramInit = 1 for both DCTs\n");
+ NBPtr->BrdcstSet (NBPtr, BFEnDramInit, 1);
+ NBPtr->PollBitField (NBPtr, BFDctAccessDone, 1, PCI_ACCESS_TIMEOUT, TRUE);
+
+ // 4.wait 200us
+ MemUWait10ns (20000, MemPtr);
+
+ // 5.Program F2x[1, 0]7C[DeassertMemRstX] = 1.
+ NBPtr->BrdcstSet (NBPtr, BFDeassertMemRstX, 1);
+
+ // 6.wait 500us
+ MemUWait10ns (50000, MemPtr);
+
+ // Do Phy Fence training before sending MRS commands
+ if (!NBPtr->IsSupported[FenceTrnBeforeDramInit]) {
+ AGESA_TESTPOINT (TpProcMemPhyFenceTraining, &(NBPtr->MemPtr->StdHeader));
+ for (Dct = 0; Dct < NBPtr->DctCount; Dct++) {
+ NBPtr->SwitchDCT (NBPtr, Dct);
+ if (NBPtr->DCTPtr->Timings.DctMemSize != 0) {
+ IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct);
+ NBPtr->PhyFenceTraining (NBPtr);
+ }
+ }
+ }
+
+ // 7.NOP or deselect & take CKE high
+ NBPtr->BrdcstSet (NBPtr, BFAssertCke, 1);
+
+ // 8.wait 360ns
+ MemUWait10ns (36, MemPtr);
+
+ // The following steps are performed once for each channel with unbuffered DIMMs
+ // and once for each chip select on registered DIMMs:
+ for (Dct = 0; Dct < NBPtr->DctCount; Dct++) {
+ NBPtr->SwitchDCT (NBPtr, Dct);
+ if (NBPtr->DCTPtr->Timings.DctMemSize != 0) {
+ IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct);
+
+ // Enable Dram Parity if appropriate.
+ NBPtr->FamilySpecificHook[EnableParityAfterMemRst] (NBPtr, NULL);
+
+ // The following steps are performed with registered DIMMs only and
+ // must be done for each chip select pair:
+ if (MCTPtr->Status[SbRegistered]) {
+ MemTDramControlRegInit3 (TechPtr);
+ }
+
+ // Initialize LRDIMM's register
+ TechPtr->TechnologySpecificHook[LrdimmControlRegInit] (TechPtr, NULL);
+
+ for (ChipSel = 0; ChipSel < MAX_CS_PER_CHANNEL; ChipSel++) {
+ if (NBPtr->GetSysAddr (NBPtr, ChipSel, &Dummy)) {
+ IDS_HDT_CONSOLE (MEM_STATUS, "\t\tCS %d\n", ChipSel);
+ // if chip select present
+ if (!(TechPtr->TechnologySpecificHook[LrdimmSendAllMRCmds] (TechPtr, &ChipSel))) {
+ MemTSendAllMRCmds3 (TechPtr, ChipSel);
+ }
+ // NOTE: wait 512 clocks for DLL-relock
+ MemUWait10ns (50000, NBPtr->MemPtr); // wait 500us
+ if (!(MCTPtr->Status[SbRegistered] || MCTPtr->Status[SbLrdimms])) {
+ break;
+ }
+ }
+ }
+
+ // 17.Send two ZQCL commands (to even then odd chip select)
+ NBPtr->sendZQCmd (NBPtr);
+ NBPtr->sendZQCmd (NBPtr);
+ }
+ }
+
+ // 18.Program F2x[1,0]7C[EnDramInit]=0
+ NBPtr->BrdcstSet (NBPtr, BFEnDramInit, 0);
+ NBPtr->PollBitField (NBPtr, BFDctAccessDone, 1, PCI_ACCESS_TIMEOUT, TRUE);
+ //
+ // For Unbuffered Dimms, Issue MRS for remaining CS without EnDramInit
+ //
+ NBPtr->FamilySpecificHook[SendMrsCmdsPerCs] (NBPtr, NBPtr);
+
+ IDS_HDT_CONSOLE (MEM_FLOW, "End Dram Init\n\n");
+ return (BOOLEAN) (MCTPtr->ErrCode < AGESA_FATAL);
+}
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This function calculates the EMRS1 value
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ * @param[in] Wl - Indicates if WL mode should be enabled
+ * @param[in] TargetDIMM - DIMM target for WL
+ */
+
+VOID
+MemTEMRS13 (
+ IN OUT MEM_TECH_BLOCK *TechPtr,
+ IN BOOLEAN Wl,
+ IN UINT8 TargetDIMM
+ )
+{
+ UINT16 MrsAddress;
+ UINT8 MaxDimmPerCH;
+ UINT8 ChipSel;
+ UINT8 Value8;
+
+ MEM_NB_BLOCK *NBPtr;
+
+ NBPtr = TechPtr->NBPtr;
+ MaxDimmPerCH = GetMaxDimmsPerChannel (NBPtr->RefPtr->PlatformMemoryConfiguration,
+ NBPtr->MCTPtr->SocketId,
+ NBPtr->ChannelPtr->ChannelID);
+ ChipSel = (UINT8) (0x0FF & NBPtr->GetBitField (NBPtr, BFMrsChipSel));
+
+ // BA2=0,BA1=0,BA0=1
+ NBPtr->SetBitField (NBPtr, BFMrsBank, 1);
+
+ MrsAddress = 0;
+
+ // program MrsAddress[5,1]=output driver impedance control (DIC):
+ // based on F2x[1,0]84[DrvImpCtrl]
+ if (!(NBPtr->IsSupported[CheckDrvImpCtrl])) {
+ Value8 = (UINT8)NBPtr->GetBitField (NBPtr, BFDrvImpCtrl);
+ if ((Value8 & ((UINT8) 1 << 1)) != 0) {
+ MrsAddress |= ((UINT16) 1 << 5);
+ }
+ if ((Value8 & ((UINT8) 1 << 0)) != 0) {
+ MrsAddress |= ((UINT16) 1 << 1);
+ }
+ } else {
+ MrsAddress |= ((UINT16) 1 << 1);
+ }
+ // program MrsAddress[9,6,2]=nominal termination resistance of ODT (RTT):
+ // Different CS may have different RTT.
+ //
+ Value8 = NBPtr->MemNGetDramTerm (NBPtr, ChipSel);
+
+ //
+ // If Write Leveling this DIMM
+ //
+ if (Wl) {
+ if ((ChipSel >> 1) == TargetDIMM) {
+ // Program MrsAddress[7] = 1 for Write leveling enable
+ MrsAddress |= ((UINT16) 1 << 7);
+ if (ChipSel & 1) {
+ // Output buffer disabled, MrsAddress[7] (Qoff = 1)
+ MrsAddress |= ((UINT16) 1 << 12);
+ }
+ // Set Rtt_Nom = Rtt_Wr if there are 2 or more dimms
+ if ((NBPtr->ChannelPtr->DimmQrPresent != 0) || (NBPtr->ChannelPtr->Dimms >= 2)) {
+ Value8 = NBPtr->MemNGetDynDramTerm (NBPtr, ChipSel);
+ }
+ }
+ }
+ //
+ // Turn off Rtt_Nom (DramTerm=0) for certain CS in certain configs.
+ //
+ // All odd CS for 4 Dimm Systems
+ if (MaxDimmPerCH == 4) {
+ if (ChipSel & 0x01) {
+ Value8 = 0;
+ }
+ // CS 1 and 5 for 3 Dimm configs
+ } else if (MaxDimmPerCH == 3) {
+ if ((ChipSel == 1) || (ChipSel == 5)) {
+ Value8 = 0;
+ }
+ }
+ // All odd CS of any QR Dimms
+ if ((NBPtr->ChannelPtr->DimmQrPresent & ((UINT8) (1 << (ChipSel >> 1)))) != 0) {
+ if (ChipSel & 0x01) {
+ Value8 = 0;
+ }
+ }
+ if ((Value8 & ((UINT8) 1 << 2)) != 0) {
+ MrsAddress |= ((UINT16) 1 << 9);
+ }
+ if ((Value8 & ((UINT8) 1 << 1)) != 0) {
+ MrsAddress |= ((UINT16) 1 << 6);
+ }
+ if ((Value8 & ((UINT8) 1 << 0)) != 0) {
+ MrsAddress |= ((UINT16) 1 << 2);
+ }
+
+ // program MrsAddress[12]=output disable (QOFF):
+ // based on F2x[1,0]84[Qoff]
+
+ if (!NBPtr->IsSupported[CheckQoff]) {
+ if (NBPtr->GetBitField (NBPtr, BFQoff) != 0) {
+ MrsAddress |= ((UINT16) 1 << 12);
+ }
+ }
+
+ // program MrsAddress[11]=TDQS:
+ // based on F2x[1,0]94[RDqsEn]
+
+ if ((NBPtr->DCTPtr->Timings.Dimmx4Present != 0) && (NBPtr->DCTPtr->Timings.Dimmx8Present != 0)) {
+ MrsAddress |= ((UINT16) 1 << 11);
+ }
+
+ NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress);
+}
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This function calculates the EMRS2 value
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ *
+ */
+
+VOID
+MemTEMRS23 (
+ IN OUT MEM_TECH_BLOCK *TechPtr
+ )
+{
+ UINT32 MrsAddress;
+ UINT8 DramTermDyn;
+ UINT8 MaxDimmPerCH;
+ UINT8 ChipSel;
+ MEM_NB_BLOCK *NBPtr;
+
+ NBPtr = TechPtr->NBPtr;
+
+ MaxDimmPerCH = GetMaxDimmsPerChannel (NBPtr->RefPtr->PlatformMemoryConfiguration, NBPtr->MCTPtr->SocketId, NBPtr->ChannelPtr->ChannelID );
+ ChipSel = (UINT8) (0x0FF & NBPtr->GetBitField (NBPtr, BFMrsChipSel));
+
+ // BA2=0,BA1=1,BA0=0
+ NBPtr->SetBitField (NBPtr, BFMrsBank, 2);
+
+ // program MrsAddress[5:3]=CAS write latency (CWL):
+ MrsAddress = NBPtr->MemNGetMR2CWL (NBPtr);
+
+ // program MrsAddress[6]=auto self refresh method (ASR):
+ // program MrsAddress[7]=self refresh temperature range (SRT):
+ MrsAddress |= 1 << 6;
+ MrsAddress &= ( ~ (1 << 7));
+
+ // program MrsAddress[10:9]=dynamic termination during writes (RTT_WR):
+ DramTermDyn = NBPtr->MemNGetDynDramTerm (NBPtr, ChipSel);
+ // Special Case for 1 DR Unbuffered Dimm in 3 Dimm/Ch
+ if (!(NBPtr->MCTPtr->Status[SbRegistered])) {
+ if (MaxDimmPerCH == 3) {
+ if (NBPtr->ChannelPtr->Dimms == 1) {
+ if ((NBPtr->ChannelPtr->DimmDrPresent & ((UINT8) (1 << (ChipSel >> 1)))) != 0) {
+ DramTermDyn = 1;
+ }
+ }
+ }
+ }
+ MrsAddress |= (UINT16) DramTermDyn << 9;
+
+ NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress);
+}
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This function calculates the EMRS3 value
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ *
+ */
+
+VOID
+MemTEMRS33 (
+ IN OUT MEM_TECH_BLOCK *TechPtr
+ )
+{
+ MEM_NB_BLOCK *NBPtr;
+
+ NBPtr = TechPtr->NBPtr;
+
+ // BA2=0,BA1=1,BA0=1
+ NBPtr->SetBitField (NBPtr, BFMrsBank, 3);
+
+ // program MrsAddress[1:0]=multi purpose register address location
+ // (MPR Location):based on F2x[1,0]84[MprLoc]
+ // program MrsAddress[2]=multi purpose register
+ // (MPR):based on F2x[1,0]84[MprEn]
+ NBPtr->SetBitField (NBPtr, BFMrsAddress, (NBPtr->GetBitField (NBPtr, BFDramMRSReg) >> 24) & 0x0007);
+}
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This sets MRS value
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ *
+ */
+
+VOID
+MemTMRS3 (
+ IN OUT MEM_TECH_BLOCK *TechPtr
+ )
+{
+ UINT32 MrsAddress;
+ MEM_NB_BLOCK *NBPtr;
+ UINT32 Ppd;
+
+ NBPtr = TechPtr->NBPtr;
+
+ // BA2=0,BA1=0,BA0=0
+ NBPtr->SetBitField (NBPtr, BFMrsBank, 0);
+
+ // program MrsAddress[1:0]=burst length and control method
+ // (BL):based on F2x[1,0]84[BurstCtrl]
+ MrsAddress = NBPtr->GetBitField (NBPtr, BFBurstCtrl);
+
+ // program MrsAddress[3]=1 (BT):interleaved
+ MrsAddress |= (UINT16) 1 << 3;
+
+ // program MrsAddress[6:4,2]=read CAS latency
+ MrsAddress |= NBPtr->MemNGetMR0CL (NBPtr);
+
+ // program MrsAddress[11:9]=write recovery for auto-precharge
+ MrsAddress |= NBPtr->MemNGetMR0WR (NBPtr);
+
+ // program MrsAddress[12] (PPD):based on F2x[1,0]84[PChgPDModeSel]
+ Ppd = NBPtr->GetBitField (NBPtr, BFPchgPDModeSel);
+ NBPtr->FamilySpecificHook[MR0_PPD] (NBPtr, &Ppd);
+ IDS_OPTION_HOOK (IDS_MEM_MR0, &Ppd, &TechPtr->NBPtr->MemPtr->StdHeader);
+ MrsAddress |= Ppd << 12;
+
+ // program MrsAddress[8]=1 (DLL):DLL reset
+ MrsAddress |= (UINT32) 1 << 8;
+
+ NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress);
+}
+
+/* -----------------------------------------------------------------------------*/
+/**
+ *
+ * This send all MR commands to a rank in sequence 2-3-1-0
+ *
+ * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK
+ * @param[in] ChipSel - Target Chip Select
+ */
+
+VOID
+MemTSendAllMRCmds3 (
+ IN OUT MEM_TECH_BLOCK *TechPtr,
+ IN UINT8 ChipSel
+ )
+{
+ MEM_NB_BLOCK *NBPtr;
+
+ NBPtr = TechPtr->NBPtr;
+
+ NBPtr->SetBitField (NBPtr, BFMrsChipSel, ChipSel);
+
+ // 13.Send EMRS(2)
+ MemTEMRS23 (TechPtr);
+ NBPtr->SendMrsCmd (NBPtr);
+
+ // 14.Send EMRS(3). Ordinarily at this time, MrsAddress[2:0]=000b
+ MemTEMRS33 (TechPtr);
+ NBPtr->SendMrsCmd (NBPtr);
+
+ // 15.Send EMRS(1).
+ MemTEMRS13 (TechPtr, FALSE, (ChipSel >> 1));
+ NBPtr->SendMrsCmd (NBPtr);
+
+ // 16.Send MRS with MrsAddress[8]=1(reset the DLL)
+ MemTMRS3 (TechPtr);
+ NBPtr->SendMrsCmd (NBPtr);
+}