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Diffstat (limited to 'src/vendorcode/amd/agesa/f14/Proc/Recovery/Mem/NB/mrndct.c')
| -rw-r--r-- | src/vendorcode/amd/agesa/f14/Proc/Recovery/Mem/NB/mrndct.c | 1502 |
1 files changed, 1502 insertions, 0 deletions
diff --git a/src/vendorcode/amd/agesa/f14/Proc/Recovery/Mem/NB/mrndct.c b/src/vendorcode/amd/agesa/f14/Proc/Recovery/Mem/NB/mrndct.c new file mode 100644 index 0000000000..15ccaf3e8a --- /dev/null +++ b/src/vendorcode/amd/agesa/f14/Proc/Recovery/Mem/NB/mrndct.c @@ -0,0 +1,1502 @@ +/* $NoKeywords:$ */ +/** + * @file + * + * mrndct.c + * + * Northbridge common DCT support for Recovery + * + * @xrefitem bom "File Content Label" "Release Content" + * @e project: AGESA + * @e sub-project: (Proc/Recovery/Mem/NB) + * @e \$Revision: 38303 $ @e \$Date: 2010-09-22 00:22:47 +0800 (Wed, 22 Sep 2010) $ + * + **/ +/* + ***************************************************************************** + * + * Copyright (c) 2011, Advanced Micro Devices, Inc. + * All rights reserved. + * + * Redistribution and use in source and binary forms, with or without + * modification, are permitted provided that the following conditions are met: + * * Redistributions of source code must retain the above copyright + * notice, this list of conditions and the following disclaimer. + * * Redistributions in binary form must reproduce the above copyright + * notice, this list of conditions and the following disclaimer in the + * documentation and/or other materials provided with the distribution. + * * Neither the name of Advanced Micro Devices, Inc. nor the names of + * its contributors may be used to endorse or promote products derived + * from this software without specific prior written permission. + * + * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" AND + * ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED + * WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE + * DISCLAIMED. IN NO EVENT SHALL ADVANCED MICRO DEVICES, INC. BE LIABLE FOR ANY + * DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES + * (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; + * LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND + * ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT + * (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE OF THIS + * SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. + * + * *************************************************************************** + * + */ + + +/* + *---------------------------------------------------------------------------- + * MODULES USED + * + *---------------------------------------------------------------------------- + */ + + + +#include "AGESA.h" +#include "OptionMemory.h" +#include "PlatformMemoryConfiguration.h" +#include "Ids.h" +#include "mrport.h" +#include "cpuFamRegisters.h" +#include "mm.h" +#include "mn.h" +#include "mt.h" +#include "mru.h" +#include "ma.h" +#include "Filecode.h" +#define FILECODE PROC_RECOVERY_MEM_NB_MRNDCT_FILECODE +/*---------------------------------------------------------------------------- + * DEFINITIONS AND MACROS + * + *---------------------------------------------------------------------------- + */ +#define RECDEF_DRAM_CONTROL_REG 0x320C2A06 +#define RECDEF_DRAM_MRSREG 0x000400A4 +#define RECDEF_DRAM_TIMING_LO 0x000A0092 +#define RECDEF_DRAM_TIMING_HI 0xB6D218FF +#define RECDEF_CSMASK_REG 0x00083FE0 +#define RECDEF_DRAM_CONFIG_LO_REG 0x00000000 +#define RECDEF_DRAM_CONFIG_HI_REG 0x1F48010B +#define RECDEF_DRAM_BASE_REG 0x00000003 + + +/*---------------------------------------------------------------------------- + * TYPEDEFS AND STRUCTURES + * + *---------------------------------------------------------------------------- + */ +/// Type of an entry for processing phy init compensation for client NB +typedef struct { + BIT_FIELD_NAME IndexBitField; ///< Bit field on which the value is decided + BIT_FIELD_NAME StartTargetBitField; ///< First bit field to be modified + BIT_FIELD_NAME EndTargetBitField; ///< Last bit field to be modified + UINT16 ExtraValue; ///< Extra value needed to be written to bit field + CONST UINT16 (*TxPrePN)[4]; ///< Pointer to slew rate table +} REC_PHY_COMP_INIT_CLIENTNB; + +/*---------------------------------------------------------------------------- + * PROTOTYPES OF LOCAL FUNCTIONS + * + *---------------------------------------------------------------------------- + */ +VOID +STATIC +MemRecTCtlOnDimmMirrorNb ( + IN OUT MEM_NB_BLOCK *NBPtr, + IN BOOLEAN SetFlag + ); + +VOID +STATIC +MemRecNSwapBitsNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ); + +VOID +STATIC +MemRecNProgNbPstateDependentRegClientNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ); + +VOID +STATIC +MemRecNTrainPhyFenceNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ); + +VOID +STATIC +MemRecNInitPhyCompClientNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ); + +/*---------------------------------------------------------------------------- + * EXPORTED FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function programs the memory controller with configuration parameters + * + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + * @return TRUE - An Error value lower than AGESA_ERROR may have occurred + * @return FALSE - An Error value greater than or equal to AGESA_ERROR may have occurred + */ + +BOOLEAN +MemRecNAutoConfigNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + UINT8 Dimm; + UINT8 Dct; + UINT32 RegValue; + UINT8 ChipSel; + UINT32 CSBase; + DCT_STRUCT *DCTPtr; + CH_DEF_STRUCT *ChannelPtr; + + Dct = NBPtr->Dct; + DCTPtr = NBPtr->DCTPtr; + ChannelPtr = NBPtr->ChannelPtr; + + //Prepare variables for future usage. + for (Dimm = 0; Dimm < MAX_DIMMS_PER_CHANNEL; Dimm++) { + if ((ChannelPtr->ChDimmValid & (UINT8) 1 << Dimm) != 0) { + DCTPtr->Timings.CsPresent |= (UINT16) 1 << (Dimm * 2); + if (((ChannelPtr->DimmDrPresent & (UINT8) 1 << Dimm) == 0) && ((ChannelPtr->DimmQrPresent & (UINT8) 1 << Dimm) == 0)) { + continue; + } else { + DCTPtr->Timings.CsPresent |= (UINT16) 1 << (Dimm * 2 + 1); + } + } + } + + Dimm = NBPtr->DimmToBeUsed; + + //Temporarily set all CS Base/Limit registers (corresponding to Dimms exist on a channel) with 256MB size for WL training. + CSBase = 0; + for (ChipSel = 0; ChipSel < MAX_CS_PER_CHANNEL; ChipSel++) { + if (DCTPtr->Timings.CsPresent & (UINT8) 1 << ChipSel) { + + CSBase &= (UINT32) ~0x08; //Clear OnDimmMirror bit. + if (((ChipSel & 1) != 0) && ((ChannelPtr->DimmMirrorPresent & (UINT8) 1 << (ChipSel >> 1)) != 0)) { + CSBase |= (UINT32) 0x08; //Set OnDimmMirror bit. + } + MemRecNSetBitFieldNb (NBPtr, (BFCSBaseAddr0Reg + ChipSel), (CSBase | 0x01)); + CSBase += 0x100000; + if ((ChipSel & 1) == 0) { + MemRecNSetBitFieldNb (NBPtr, (BFCSMask0Reg + (ChipSel >> 1)), RECDEF_CSMASK_REG); + } + } + } + MemRecNSetBitFieldNb (NBPtr, BFDramBaseReg0, RECDEF_DRAM_BASE_REG); + MemRecNSetBitFieldNb (NBPtr, BFDramLimitReg0, 0x70000); + + // Disable the other DCT + NBPtr->MemRecNSwitchDctNb (NBPtr, Dct ^ 0x01); + MemRecNSetBitFieldNb (NBPtr, BFDisDramInterface, 1); + NBPtr->MemRecNSwitchDctNb (NBPtr, Dct); + if (Dct != 0) { + // If DCT 1, set DctSelBase registers + MemRecNSetBitFieldNb (NBPtr, BFDctSelBaseAddrReg, 0x00000003); + MemRecNSetBitFieldNb (NBPtr, BFDctSelBaseOffsetReg, 0x00000000); + } + + MemRecNSetBitFieldNb (NBPtr, BFDramBankAddrReg, 0x00001111); + + // Set timing registers + MemRecNSetBitFieldNb (NBPtr, BFDramTimingLoReg, RECDEF_DRAM_TIMING_LO); + MemRecNSetBitFieldNb (NBPtr, BFDramTimingHiReg, RECDEF_DRAM_TIMING_HI); + MemRecNSetBitFieldNb (NBPtr, BFDramMRSReg, RECDEF_DRAM_MRSREG); + MemRecNSetBitFieldNb (NBPtr, BFDramControlReg, RECDEF_DRAM_CONTROL_REG); + + // Set DRAM Config Low Register + RegValue = RECDEF_DRAM_CONFIG_LO_REG; + // Set x4Dimm based on DIMM type + if ((NBPtr->ChannelPtr->Dimmx4Present & ((UINT8) 1 << Dimm)) != 0) { + RegValue |= ((UINT32) 1 << (Dimm + 12)); + } + // If not registered, set unbuffered DIMM + if (!(NBPtr->ChannelPtr->RegDimmPresent & ((UINT8) 1 << Dimm))) { + RegValue |= ((UINT32) 1 << 16); + } + MemRecNSetBitFieldNb (NBPtr, BFDramConfigLoReg, RegValue); + + // Set DRAM Config High Register + RegValue = RECDEF_DRAM_CONFIG_HI_REG; + MemRecNSetBitFieldNb (NBPtr, BFDramConfigHiReg, RegValue); + + //====================================================================== + // Build Dram Config Misc Register Value + //====================================================================== + // + if ((NBPtr->ChannelPtr->RegDimmPresent != 0) && (NBPtr->ChannelPtr->TechType == DDR3_TECHNOLOGY)) { + MemRecNSetBitFieldNb (NBPtr, BFSubMemclkRegDly, 1); + } + MemRecNSetBitFieldNb (NBPtr, BFOdtSwizzle, 1); + + return TRUE; +} + + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function gets platform specific config/timing values from the interface layer and + * programs them into DCT. + * + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + * @return TRUE - An Error value lower than AGESA_ERROR may have occurred + * @return FALSE - An Error value greater than or equal to AGESA_ERROR may have occurred + */ + +BOOLEAN +MemRecNPlatformSpecNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + UINT8 p; + + p = 0; + for (p = 0; p < MAX_PLATFORM_TYPES; p++) { + if (NBPtr->MemPtr->GetPlatformCfg[p] (NBPtr->MemPtr, NBPtr->MCTPtr->SocketId, NBPtr->ChannelPtr) == AGESA_SUCCESS) { + MemRecNSetBitFieldNb (NBPtr, BFODCControl, NBPtr->ChannelPtr->DctOdcCtl); + MemRecNSetBitFieldNb (NBPtr, BFAddrTmgControl, NBPtr->ChannelPtr->DctAddrTmg); + return TRUE; + } + } + return FALSE; +} + + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function reads MemClkFreqVal bit to see if the DIMMs are present in this node. + * If the DIMMs are present then set the DRAM Enable bit for this node. + * + * Setting dram init starts up the DCT state machine, initializes the + * dram devices with MRS commands, and kicks off any + * HW memory clear process that the chip is capable of. The sooner + * that dram init is set for all nodes, the faster the memory system + * initialization can complete. Thus, the init loop is unrolled into + * two loops so as to start the processes for non BSP nodes sooner. + * This procedure will not wait for the process to finish. Synchronization is + * handled elsewhere. + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + */ + +VOID +MemRecNStartupDCTNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + // 1. Ensure F2x[1, 0]9C_x08[DisAutoComp] = 1. + // 2. BIOS waits 5 us for the disabling of the compensation engine to complete. + // ------- Done in InitPhyComp_Nb ------- + // + MemRecNSetBitFieldNb (NBPtr, BFDisAutoComp, 1); + MemRecUWait10ns (500, NBPtr->MemPtr); + + //MemRecNSetBitFieldNb (NBPtr, BFInitDram, 1); // HW Dram init + AGESA_TESTPOINT (TpProcMemDramInit, &(NBPtr->MemPtr->StdHeader)); + NBPtr->TechPtr->DramInit (NBPtr->TechPtr); + + // 7. Program F2x[1, 0]9C_x08[DisAutoComp] = 0. + // 8. BIOS must wait 750 us for the phy compensation engine + // to reinitialize. + // + MemRecNSetBitFieldNb (NBPtr, BFDisAutoComp, 0); + MemRecUWait10ns (75000, NBPtr->MemPtr); + + while (MemRecNGetBitFieldNb (NBPtr, BFDramEnabled) == 0); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function initializes the DRAM devices on all DCTs at the same time + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + */ + +VOID +MemRecNStartupDCTClientNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + // Program D18F2x[1,0]9C_x0000_000B = 80000000h. #109999. + MemRecNSetBitFieldNb (NBPtr, BFDramPhyStatusReg, 0x80000000); + + // Program D18F2x[1,0]9C_x0D0F_E013[PllRegWaitTime] = 0118h. #193770. + MemRecNSetBitFieldNb (NBPtr, BFPllRegWaitTime, 0x118); + + // Phy Voltage Level Programming + MemRecNPhyVoltageLevelNb (NBPtr); + + // Run frequency change sequence + MemRecNSetBitFieldNb (NBPtr, BFPllLockTime, NBPtr->FreqChangeParam->PllLockTimeDefault); + MemRecNSetBitFieldNb (NBPtr, BFMemClkFreq, 6); + MemRecNProgNbPstateDependentRegClientNb (NBPtr); + MemRecNSetBitFieldNb (NBPtr, BFMemClkFreqVal, 1); + MemRecNSetBitFieldNb (NBPtr, BFPllLockTime, 0x000F); + + MemRecNSetBitFieldNb (NBPtr, BFDbeGskMemClkAlignMode, 0); + MemRecNSetBitFieldNb (NBPtr, BFEnDramInit, 1); + + // Phy fence programming + MemRecNPhyFenceTrainingNb (NBPtr); + + // Phy Compensation Initialization + MemRecNInitPhyCompClientNb (NBPtr); + + // Run DramInit sequence + AGESA_TESTPOINT (TpProcMemDramInit, &(NBPtr->MemPtr->StdHeader)); + NBPtr->TechPtr->DramInit (NBPtr->TechPtr); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function sets the maximum round-trip latency in the system from the processor to the DRAM + * devices and back. + + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * @param[in] MaxRcvEnDly - Maximum receiver enable delay value + * + */ + +VOID +MemRecNSetMaxLatencyNb ( + IN OUT MEM_NB_BLOCK *NBPtr, + IN UINT16 MaxRcvEnDly + ) +{ + UINT16 SubTotal; + + AGESA_TESTPOINT (TpProcMemRcvrCalcLatency, &(NBPtr->MemPtr->StdHeader)); + + // Multiply the CAS Latency by two to get a number of 1/2 MEMCLKs UINTs. + SubTotal = 6 * 2; + + // If registered DIMMs are being used then add 1 MEMCLK to the sub-total. + if (MemRecNGetBitFieldNb (NBPtr, BFUnBuffDimm) == 0) { + SubTotal += 2; + } + + // if (AddrCmdSetup || CsOdtSetup || CkeSetup) then K := K + 2; + SubTotal += 2; + + // If the F2x[1, 0]78[RdPtrInit] field is 4, 5, 6 or 7 MEMCLKs, + // then add 4, 3, 2, or 1 MEMCLKs, respectively to the sub-total. + // + SubTotal += 8 - 5; + + // Add the maximum (worst case) delay value of DqsRcvEnGrossDelay + // that exists across all DIMMs and byte lanes. + // + SubTotal += MaxRcvEnDly >> 5; + + // Add 5.5 to the sub-total. 5.5 represents part of the processor + // specific constant delay value in the DRAM clock domain. + // + SubTotal += 5; // add 5.5 1/2MemClk + + // Convert the sub-total (in 1/2 MEMCLKs) to northbridge clocks (NCLKs) + // as follows (assuming DDR400 and assuming that no P-state or link speed + // changes have occurred). + // + // Simplified formula: + // SubTotal *= (Fn2xD4[NBFid]+4)/4 + // + SubTotal = SubTotal * ((UINT16) MemRecNGetBitFieldNb (NBPtr, BFNbFid) + 4); + SubTotal /= 4; + + // Add 5 NCLKs to the sub-total. 5 represents part of the processor + // specific constant value in the northbridge clock domain. + // + SubTotal += 5; + + // Program the F2x[1, 0]78[MaxRdLatency] register with the total delay value + MemRecNSetBitFieldNb (NBPtr, BFMaxLatency, SubTotal); +} + + +/* -----------------------------------------------------------------------------*/ +/** + * + * Set Dram ODT for mission mode and write leveling mode. + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * @param[in] OdtMode - Mission mode or write leveling mode + * @param[in] ChipSelect - Chip select number + * @param[in] TargetCS - Chip select number that is being trained + * + */ + +VOID +MemRecNSetDramOdtNb ( + IN OUT MEM_NB_BLOCK *NBPtr, + IN ODT_MODE OdtMode, + IN UINT8 ChipSelect, + IN UINT8 TargetCS + ) +{ + UINT8 DramTerm; + UINT8 DramTermDyn; + + DramTerm = NBPtr->ChannelPtr->Reserved[0]; + DramTermDyn = NBPtr->ChannelPtr->Reserved[1]; + + if (OdtMode == WRITE_LEVELING_MODE) { + if (ChipSelect == TargetCS) { + DramTerm = DramTermDyn; + MemRecNSetBitFieldNb (NBPtr, BFWrLvOdt, NBPtr->ChannelPtr->PhyWLODT[TargetCS >> 1]); + } + } + MemRecNSetBitFieldNb (NBPtr, BFDramTerm, DramTerm); + MemRecNSetBitFieldNb (NBPtr, BFDramTermDyn, DramTermDyn); +} + +/*---------------------------------------------------------------------------- + * LOCAL FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function sends an MRS command + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + */ + +VOID +MemRecNSendMrsCmdNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + BOOLEAN ClearODM; + ClearODM = FALSE; + if (NBPtr->IsSupported[CheckClearOnDimmMirror]) { + ClearODM = FALSE; + if ((NBPtr->MCTPtr->LogicalCpuid.Revision & AMD_F10_C0) != 0) { + if (NBPtr->IsSupported[CheckClearOnDimmMirror]) { + if (MemRecNGetBitFieldNb (NBPtr, BFEnDramInit) == 0) { + // For C0, if EnDramInit bit is cleared, ODM needs to be cleared before sending MRS + MemRecTCtlOnDimmMirrorNb (NBPtr, FALSE); + ClearODM = TRUE; + } + } + } + } + + MemRecNSwapBitsNb (NBPtr); + + IDS_HDT_CONSOLE (MEM_FLOW, "\t\t\tCS%d MR%d %04x\n", + (MemRecNGetBitFieldNb (NBPtr, BFDramInitRegReg) >> 20) & 0xF, + (MemRecNGetBitFieldNb (NBPtr, BFDramInitRegReg) >> 16) & 0xF, + (MemRecNGetBitFieldNb (NBPtr, BFDramInitRegReg) & 0xFFFF)); + + // 1.Set SendMrsCmd=1 + MemRecNSetBitFieldNb (NBPtr, BFSendMrsCmd, 1); + + // 2.Wait for SendMrsCmd=0 + while (MemRecNGetBitFieldNb (NBPtr, BFSendMrsCmd)) {} + + if (NBPtr->IsSupported[CheckClearOnDimmMirror]) { + if (ClearODM) { + // Restore ODM if necessary + MemRecTCtlOnDimmMirrorNb (NBPtr, TRUE); + } + } +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function sends the ZQCL command + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + */ + +VOID +MemRecNSendZQCmdNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + // 1.Program MrsAddress[10]=1 + MemRecNSetBitFieldNb (NBPtr, BFMrsAddress, (UINT32) 1 << 10); + + // 2.Set SendZQCmd=1 + MemRecNSetBitFieldNb (NBPtr, BFSendZQCmd, 1); + + // 3.Wait for SendZQCmd=0 + while (MemRecNGetBitFieldNb (NBPtr, BFSendZQCmd)) {} + + // 4.Wait 512 MEMCLKs + MemRecUWait10ns (128, NBPtr->MemPtr); // 512*2.5ns=1280, wait 1280ns +} + + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function disables/enables F2x[1, 0][5C:40][OnDimmMirror] + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * @param[in] SetFlag - Enable or disable flag - TRUE - Enable, FALSE - DISABLE + * + */ + +VOID +STATIC +MemRecTCtlOnDimmMirrorNb ( + IN OUT MEM_NB_BLOCK *NBPtr, + IN BOOLEAN SetFlag + ) +{ + UINT8 Chipsel; + UINT32 CSBaseAddrReg; + + for (Chipsel = 0; Chipsel < MAX_CS_PER_CHANNEL; Chipsel += 2) { + CSBaseAddrReg = MemRecNGetBitFieldNb (NBPtr, BFCSBaseAddr1Reg + Chipsel); + if ((CSBaseAddrReg & 1) == 1) { + if (SetFlag && ((NBPtr->ChannelPtr->DimmMirrorPresent & ((UINT8) 1 << (Chipsel >> 1))) != 0)) { + CSBaseAddrReg |= ((UINT32) 1 << BFOnDimmMirror); + } else { + CSBaseAddrReg &= ~((UINT32) 1 << BFOnDimmMirror); + } + MemRecNSetBitFieldNb (NBPtr, BFCSBaseAddr1Reg + Chipsel, CSBaseAddrReg); + } + } +} +/* -----------------------------------------------------------------------------*/ +/** + * + * + * This function swaps bits for OnDimmMirror support + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + */ + +VOID +STATIC +MemRecNSwapBitsNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + UINT8 ChipSel; + UINT32 MRSReg; + + ChipSel = (UINT8) MemRecNGetBitFieldNb (NBPtr, BFMrsChipSel); + if ((ChipSel & 1) != 0) { + MRSReg = MemRecNGetBitFieldNb (NBPtr, BFDramInitRegReg); + if ((NBPtr->ChannelPtr->DimmMirrorPresent & (UINT8) 1 << (ChipSel >> 1)) != 0) { + MRSReg = (MRSReg & 0xFFFCFE07) | ((MRSReg&0x100A8) << 1) | ((MRSReg&0x20150) >> 1); + MemRecNSetBitFieldNb (NBPtr, BFDramInitRegReg, MRSReg); + } + } +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * + * This function gets the total of sync components for Max Read Latency calculation + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + * @return Total in 1/2 MEMCLKs + */ + +UINT32 +MemRecNTotalSyncComponentsClientNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + UINT32 T; + UINT32 P; + UINT32 AddrTmgCtl; + UINT32 MemClkPeriod; + + AGESA_TESTPOINT (TpProcMemRcvrCalcLatency , &(NBPtr->MemPtr->StdHeader)); + + // Before calculating MaxRdLatecny, program a number of registers. + MemRecNSetBitFieldNb (NBPtr, BFDisDllShutdownSR, 1); + MemRecNSetBitFieldNb (NBPtr, BFEnterSelfRef, 1); + while (MemRecNGetBitFieldNb (NBPtr, BFEnterSelfRef) != 0) {} + MemRecNSetBitFieldNb (NBPtr, BFDbeGskMemClkAlignMode, 2); + MemRecNSetBitFieldNb (NBPtr, BFExitSelfRef, 1); + while (MemRecNGetBitFieldNb (NBPtr, BFExitSelfRef) != 0) {} + MemRecNSetBitFieldNb (NBPtr, BFDisDllShutdownSR, 0); + + // P = P + ((16 + RdPtrInitMin - D18F2x[1,0]78[RdPtrInit]) MOD 16) where RdPtrInitMin = RdPtrInit + P = 0; + + AddrTmgCtl = MemRecNGetBitFieldNb (NBPtr, BFAddrTmgControl); + if (((AddrTmgCtl >> 16) & 0x20) != (AddrTmgCtl & 0x20)) { + P += 1; + } + + // IF (DbeGskMemClkAlignMode==01b || (DbeGskMemClkAlignMode==00b && !(AddrCmdSetup==CsOdtSetup==CkeSetup))) + // THEN P = P + 1 + + // IF (SlowAccessMode==1) THEN P = P + 2 + + // T = T + (0.5 * MemClkPeriod) - 786 ps + MemClkPeriod = 1000000 / DDR800_FREQUENCY; + T = MemClkPeriod / 2 - 768; + + // If (AddrCmdSetup==0 && CsOdtSetup==0 && CkeSetup==0) + // then P = P + 1 + // else P = P + 2 + if ((AddrTmgCtl & 0x0202020) == 0) { + P += 1; + } else { + P += 2; + } + + // P = P + (2 * (D18F2x[1,0]88[Tcl] clocks - 1)) + P += 2 * 5; // Tcl = 6 clocks + + // (DisCutThroughMode = 0), so P = P + 3 + P += 3; + + return ((P * MemClkPeriod + 1) / 2) + T; +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function programs the phy registers according to the desired phy VDDIO voltage level + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + */ + +VOID +MemRecNPhyVoltageLevelNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + BIT_FIELD_NAME BitField; + UINT16 Value; + UINT16 Mask; + + Mask = 0xFFE7; + Value = (UINT16) NBPtr->RefPtr->DDR3Voltage << 3; + + for (BitField = BFDataRxVioLvl; BitField <= BFCmpVioLvl; BitField++) { + if (BitField == BFCmpVioLvl) { + Mask = 0x3FFF; + Value <<= (14 - 3); + } + MemRecNSetBitFieldNb (NBPtr, BitField, ((MemRecNGetBitFieldNb (NBPtr, BitField) & Mask)) | Value); + } +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * + * This function executes prototypical Phy fence training function. + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + */ + +VOID +MemRecNPhyFenceTrainingNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + UINT8 FenceThresholdTxDll; + UINT8 FenceThresholdRxDll; + UINT8 FenceThresholdTxPad; + UINT16 Fence2Data; + + // 1. Program D18F2x[1,0]9C_x0000_0008[FenceTrSel]=10b. + // 2. Perform phy fence training. See 2.10.3.2.3.1 [Phy Fence Training]. + // 3. Write the calculated fence value to D18F2x[1,0]9C_x0000_000C[FenceThresholdTxDll]. + MemRecNSetBitFieldNb (NBPtr, BFFenceTrSel, 2); + MAKE_TSEFO (NBPtr->NBRegTable, DCT_PHY_ACCESS, 0x0C, 30, 26, BFPhyFence); + IDS_HDT_CONSOLE (MEM_FLOW, "\t\tFenceThresholdTxDll\n"); + MemRecNTrainPhyFenceNb (NBPtr); + FenceThresholdTxDll = (UINT8) MemRecNGetBitFieldNb (NBPtr, BFPhyFence); + + // 4. Program D18F2x[1,0]9C_x0D0F_0[F,7:0]0F[AlwaysEnDllClks]=001b. + MemRecNSetBitFieldNb (NBPtr, BFAlwaysEnDllClks, 0x1000); + + // 5. Program D18F2x[1,0]9C_x0000_0008[FenceTrSel]=01b. + // 6. Perform phy fence training. See 2.10.3.2.3.1 [Phy Fence Training]. + // 7. Write the calculated fence value to D18F2x[1,0]9C_x0000_000C[FenceThresholdRxDll]. + MemRecNSetBitFieldNb (NBPtr, BFFenceTrSel, 1); + MAKE_TSEFO (NBPtr->NBRegTable, DCT_PHY_ACCESS, 0x0C, 25, 21, BFPhyFence); + IDS_HDT_CONSOLE (MEM_FLOW, "\n\t\tFenceThresholdRxDll\n"); + MemRecNTrainPhyFenceNb (NBPtr); + FenceThresholdRxDll = (UINT8) MemRecNGetBitFieldNb (NBPtr, BFPhyFence); + + // 8. Program D18F2x[1,0]9C_x0D0F_0[F,7:0]0F[AlwaysEnDllClks]=000b. + MemRecNSetBitFieldNb (NBPtr, BFAlwaysEnDllClks, 0x0000); + + // 9. Program D18F2x[1,0]9C_x0000_0008[FenceTrSel]=11b. + // 10. Perform phy fence training. See 2.10.3.2.3.1 [Phy Fence Training]. + // 11. Write the calculated fence value to D18F2x[1,0]9C_x0000_000C[FenceThresholdTxPad]. + MemRecNSetBitFieldNb (NBPtr, BFFenceTrSel, 3); + MAKE_TSEFO (NBPtr->NBRegTable, DCT_PHY_ACCESS, 0x0C, 20, 16, BFPhyFence); + IDS_HDT_CONSOLE (MEM_FLOW, "\n\t\tFenceThresholdTxPad\n"); + MemRecNTrainPhyFenceNb (NBPtr); + FenceThresholdTxPad = (UINT8) MemRecNGetBitFieldNb (NBPtr, BFPhyFence); + + // Program Fence2 threshold for Clk, Cmd, and Addr + if (FenceThresholdTxPad < 16) { + MemRecNSetBitFieldNb (NBPtr, BFClkFence2, FenceThresholdTxPad | 0x10); + MemRecNSetBitFieldNb (NBPtr, BFCmdFence2, FenceThresholdTxPad | 0x10); + MemRecNSetBitFieldNb (NBPtr, BFAddrFence2, FenceThresholdTxPad | 0x10); + } else { + MemRecNSetBitFieldNb (NBPtr, BFClkFence2, 0); + MemRecNSetBitFieldNb (NBPtr, BFCmdFence2, 0); + MemRecNSetBitFieldNb (NBPtr, BFAddrFence2, 0); + } + + // Program Fence2 threshold for data + Fence2Data = 0; + if (FenceThresholdTxPad < 16) { + Fence2Data |= FenceThresholdTxPad | 0x10; + } + if (FenceThresholdRxDll < 16) { + Fence2Data |= (FenceThresholdRxDll | 0x10) << 10; + } + if (FenceThresholdTxDll < 16) { + Fence2Data |= (FenceThresholdTxDll | 0x10) << 5; + } + MemRecNSetBitFieldNb (NBPtr, BFDataFence2, Fence2Data); + + // Reprogram F2x9C_04. + MemRecNSetBitFieldNb (NBPtr, BFAddrTmgControl, MemRecNGetBitFieldNb (NBPtr, BFAddrTmgControl)); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * + * This function executes Phy fence training + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + */ + +VOID +STATIC +MemRecNTrainPhyFenceNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + UINT8 Byte; + UINT16 Avg; + UINT8 PREvalue; + + if (MemRecNGetBitFieldNb (NBPtr, BFDisDramInterface)) { + return; + } + + // 1. BIOS first programs a seed value to the phase recovery + // engine registers. + // + IDS_HDT_CONSOLE (MEM_FLOW, "\t\tSeeds: "); + for (Byte = 0; Byte < 9; Byte++) { + // This includes ECC as byte 8 + MemRecNSetTrainDlyNb (NBPtr, AccessPhRecDly, DIMM_BYTE_ACCESS (0, Byte), 19); + IDS_HDT_CONSOLE (MEM_FLOW, "%02x ", 19); + } + + IDS_HDT_CONSOLE (MEM_FLOW, "\n\t\tPhyFenceTrEn = 1"); + // 2. Set F2x[1, 0]9C_x08[PhyFenceTrEn]=1. + MemRecNSetBitFieldNb (NBPtr, BFPhyFenceTrEn, 1); + + MemRecUWait10ns (5000, NBPtr->MemPtr); + + // 4. Clear F2x[1, 0]9C_x08[PhyFenceTrEn]=0. + MemRecNSetBitFieldNb (NBPtr, BFPhyFenceTrEn, 0); + + // 5. BIOS reads the phase recovery engine registers + // F2x[1, 0]9C_x[51:50] and F2x[1, 0]9C_x52. + // 6. Calculate the average value of the fine delay and subtract 8. + // + Avg = 0; + for (Byte = 0; Byte < 9; Byte++) { + // This includes ECC as byte 8 + PREvalue = (UINT8) (0x1F & MemRecNGetTrainDlyNb (NBPtr, AccessPhRecDly, DIMM_BYTE_ACCESS (0, Byte))); + Avg = Avg + ((UINT16) PREvalue); + } + Avg = ((Avg + 8) / 9); // round up + Avg -= 6; + + // 7. Write the value to F2x[1, 0]9C_x0C[PhyFence]. + MemRecNSetBitFieldNb (NBPtr, BFPhyFence, Avg); + + // 8. BIOS rewrites F2x[1, 0]9C_x04, DRAM Address/Command Timing Control + // Register delays for both channels. This forces the phy to recompute + // the fence. + // + MemRecNSetBitFieldNb (NBPtr, BFAddrTmgControl, MemRecNGetBitFieldNb (NBPtr, BFAddrTmgControl)); +} + +/* -----------------------------------------------------------------------------*/ +CONST UINT16 RecPllDivTab[10] = {1, 2, 4, 8, 16, 128, 256, 1, 3, 6}; + +/** + * + * This function calculates and programs NB P-state dependent registers + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + */ + +VOID +STATIC +MemRecNProgNbPstateDependentRegClientNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + UINT8 i; + UINT8 NclkFid; + UINT16 MemClkDid; + UINT8 PllMult; + UINT8 NclkDiv; + UINT32 NclkPeriod; + UINT32 MemClkPeriod; + INT32 PartialSum2x; + INT32 PartialSumSlotI2x; + + NclkFid = (UINT8) (MemRecNGetBitFieldNb (NBPtr, BFMainPllOpFreqId) + 0x10); + MemClkDid = RecPllDivTab[MemRecNGetBitFieldNb (NBPtr, BFPllDiv)]; + PllMult = (UINT8) MemRecNGetBitFieldNb (NBPtr, BFPllMult); + NclkDiv = (UINT8) MemRecNGetBitFieldNb (NBPtr, BFNbPs0NclkDiv); + + NclkPeriod = (2500 * NclkDiv) / NclkFid; + MemClkPeriod = 1000000 / DDR800_FREQUENCY; + + // Program D18F2x[1,0]F4_x30[DbeGskFifoNumerator] and D18F2x[1,0]F4_x31[DbeGskFifoDenominator]. + MemRecNSetBitFieldNb (NBPtr, BFDbeGskFifoNumerator, NclkFid * MemClkDid * 16); + MemRecNSetBitFieldNb (NBPtr, BFDbeGskFifoDenominator, PllMult * NclkDiv); + + // Program D18F2x[1,0]F4_x32[DataTxFifoSchedDlyNegSlot1, DataTxFifoSchedDlySlot1, + // DataTxFifoSchedDlyNegSlot0, DataTxFifoSchedDlySlot0]. + // PartialSum = ((7 * NclkPeriod) + (1.5 * MemClkPeriod) + 520ps)*MemClkFrequency - tCWL - + // CmdSetup - PtrSeparation - 1. (Llano) + // PartialSum = ((5 * NclkPeriod) + MemClkPeriod) + 520ps)*MemClkFrequency - tCWL - + // CmdSetup - PtrSeparation - 1. (Ontario) + PartialSum2x = NBPtr->FreqChangeParam->NclkPeriodMul2x * NclkPeriod; + PartialSum2x += NBPtr->FreqChangeParam->MemClkPeriodMul2x * MemClkPeriod; + PartialSum2x += 520 * 2; + PartialSum2x = (PartialSum2x + MemClkPeriod - 1) / MemClkPeriod; // round-up here + PartialSum2x -= 2 * 5; //Tcwl + 5 + if ((MemRecNGetBitFieldNb (NBPtr, BFAddrTmgControl) & 0x0202020) == 0) { + PartialSum2x -= 1; + } else { + PartialSum2x -= 2; + } + // ((16 + RdPtrInitMin - D18F2x78[RdPtrInit]) MOD 16)/2 where RdPtrInitMin = RdPtrInit + PartialSum2x -= 0; + PartialSum2x -= 2; + + // If PartialSumSlotN is positive: + // DataTxFifoSchedDlySlotN=CEIL(PartialSumSlotN). + // DataTxFifoSchedDlyNegSlotN=0. + // Else if PartialSumSlotN is negative: + // DataTxFifoSchedDlySlotN=ABS(CEIL(PartialSumSlotN*MemClkPeriod/NclkPeriod)). + // DataTxFifoSchedDlyNegSlotN=1. + for (i = 0; i < 2; i++) { + PartialSumSlotI2x = PartialSum2x; + PartialSumSlotI2x += 2; + if (PartialSumSlotI2x > 0) { + MemRecNSetBitFieldNb (NBPtr, BFDataTxFifoSchedDlyNegSlot0 + i, 0); + MemRecNSetBitFieldNb (NBPtr, BFDataTxFifoSchedDlySlot0 + i, (PartialSumSlotI2x + 1) / 2); + } else { + MemRecNSetBitFieldNb (NBPtr, BFDataTxFifoSchedDlyNegSlot0 + i, 1); + PartialSumSlotI2x = ((-PartialSumSlotI2x) * MemClkPeriod) / (2 * NclkPeriod); + MemRecNSetBitFieldNb (NBPtr, BFDataTxFifoSchedDlySlot0 + i, PartialSumSlotI2x); + } + } + // Program ProcOdtAdv + MemRecNSetBitFieldNb (NBPtr, BFProcOdtAdv, 0); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * + * This function reads cache lines continuously using TCB CPG engine + * + * @param[in,out] NBPtr - Pointer to the MEM_NB_BLOCK + * @param[in,out] Buffer - Array of bytes to be filled with data read from DRAM + * @param[in] Address - System Address [47:16] + * @param[in] ClCount - Number of cache lines + * + */ + +VOID +MemRecNContReadPatternClientNb ( + IN OUT MEM_NB_BLOCK *NBPtr, + IN UINT8 Buffer[], + IN UINT32 Address, + IN UINT16 ClCount + ) +{ + // 1. Program D18F2x1C0[RdDramTrainMode]=1. + MemRecNSetBitFieldNb (NBPtr, BFRdDramTrainMode, 1); + + // 2. Program D18F2x1C0[TrainLength] to the appropriate number of cache lines. + MemRecNSetBitFieldNb (NBPtr, BFTrainLength, ClCount); + + // 3. Program the DRAM training address as follows: + MemRecNSetBitFieldNb (NBPtr, BFWrTrainAdrPtrLo, (Address >> 6)); + + // 4. Program D18F2x1D0[WrTrainBufAddr]=000h + MemRecNSetBitFieldNb (NBPtr, BFWrTrainBufAddr, 0); + + // 5. Program D18F2x1C0[RdTrainGo]=1. + MemRecNSetBitFieldNb (NBPtr, BFRdTrainGo, 1); + + // 6. Wait for D18F2x1C0[RdTrainGo]=0. + while (MemRecNGetBitFieldNb (NBPtr, BFRdTrainGo) != 0) {} + + // 7. Read D18F2x1E8[TrainCmpSts] and D18F2x1E8[TrainCmpSts2]. + + // 8. Program D18F2x1C0[RdDramTrainMode]=0. + MemRecNSetBitFieldNb (NBPtr, BFRdDramTrainMode, 0); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This is function sets the platform specific settings for the systems with UDIMMs configuration + * + * @param[in,out] *MemData Pointer to MEM_DATA_STRUCTURE + * @param[in] SocketID Socket number + * @param[in] *CurrentChannel Pointer to CH_DEF_STRUCT + * + * @return AGESA_SUCCESS + * @return CurrentChannel->DctAddrTmg Address Command Timing Settings for specified channel + * @return CurrentChannel->DctOdcCtl Drive Strength settings for specified channel + * @return CurrentChannel->Reserved[0] Dram Term for specified channel + * @return CurrentChannel->Reserved[1] Dynamic Dram Term for specified channel + * @return CurrentChannel->PhyWLODT[0] WL ODT for DIMM0 + * @return CurrentChannel->PhyWLODT[1] WL ODT for DIMM1 + * @return CurrentChannel->PhyWLODT[2] WL ODT for DIMM2 + * @return CurrentChannel->PhyWLODT[3] WL ODT for DIMM3 + * + */ +AGESA_STATUS +MemRecNGetPsCfgUDIMM3Nb ( + IN OUT MEM_DATA_STRUCT *MemData, + IN UINT8 SocketID, + IN OUT CH_DEF_STRUCT *CurrentChannel + ) +{ + UINT32 AddrTmgCTL; + UINT32 DctOdcCtl; + UINT8 Dimms; + UINT8 MaxDimmPerCH; + UINT8 DramTerm; + UINT8 DramTermDyn; + + if ((CurrentChannel->RegDimmPresent != 0) || (CurrentChannel->SODimmPresent != 0)) { + return AGESA_UNSUPPORTED; + } + + Dimms = CurrentChannel->Dimms; + MaxDimmPerCH = RecGetMaxDimmsPerChannel (MemData->ParameterListPtr->PlatformMemoryConfiguration, 0, CurrentChannel->ChannelID); + + if (MaxDimmPerCH == 1) { + return AGESA_UNSUPPORTED; + } else { + DctOdcCtl = 0x20223323; + AddrTmgCTL = 0x00390039; + if (Dimms == 1) { + DctOdcCtl = 0x20113222; + AddrTmgCTL = 0x00390039; + if (CurrentChannel->Loads == 16) { + AddrTmgCTL = 0x003B0000; + } + } + } + CurrentChannel->DctAddrTmg = AddrTmgCTL; + CurrentChannel->DctOdcCtl = DctOdcCtl; + + // ODT + if (Dimms == 1) { + DramTerm = 1; // 60 ohms + DramTermDyn = 0; // Disable + if ((MaxDimmPerCH == 3) && (CurrentChannel->DimmDrPresent != 0)) { + DramTermDyn = 1; // 60 ohms + } + } else { + DramTerm = 3; // 40 ohms + DramTermDyn = 2; // 120 ohms + } + CurrentChannel->Reserved[0] = DramTerm; + CurrentChannel->Reserved[1] = DramTermDyn; + + // WL ODT + if (Dimms == 1) { + CurrentChannel->PhyWLODT[0] = 0; + CurrentChannel->PhyWLODT[1] = (CurrentChannel->DimmDrPresent != 0) ? 8 : 2; + } else { + CurrentChannel->PhyWLODT[0] = 3; + CurrentChannel->PhyWLODT[1] = 3; + } + CurrentChannel->PhyWLODT[2] = 0; + CurrentChannel->PhyWLODT[3] = 0; + + return AGESA_SUCCESS; +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This is function sets the platform specific settings for the systems with SODIMMs configuration + * + * @param[in,out] *MemData Pointer to MEM_DATA_STRUCTURE + * @param[in] SocketID Socket number + * @param[in] *CurrentChannel Pointer to CH_DEF_STRUCT + * + * @return AGESA_SUCCESS + * @return CurrentChannel->DctAddrTmg Address Command Timing Settings for specified channel + * @return CurrentChannel->DctOdcCtl Drive Strength settings for specified channel + * @return CurrentChannel->Reserved[0] Dram Term for specified channel + * @return CurrentChannel->Reserved[1] Dynamic Dram Term for specified channel + * @return CurrentChannel->PhyWLODT[0] WL ODT for DIMM0 + * @return CurrentChannel->PhyWLODT[1] WL ODT for DIMM1 + * @return CurrentChannel->PhyWLODT[2] WL ODT for DIMM2 + * @return CurrentChannel->PhyWLODT[3] WL ODT for DIMM3 + * + */ +AGESA_STATUS +MemRecNGetPsCfgSODIMM3Nb ( + IN OUT MEM_DATA_STRUCT *MemData, + IN UINT8 SocketID, + IN OUT CH_DEF_STRUCT *CurrentChannel + ) +{ + UINT32 AddrTmgCTL; + UINT32 DctOdcCtl; + UINT8 MaxDimmPerCH; + UINT8 Dimms; + UINT8 DramTerm; + UINT8 DramTermDyn; + + if (CurrentChannel->SODimmPresent != CurrentChannel->ChDimmValid) { + return AGESA_UNSUPPORTED; + } + + Dimms = CurrentChannel->Dimms; + MaxDimmPerCH = RecGetMaxDimmsPerChannel (MemData->ParameterListPtr->PlatformMemoryConfiguration, 0, CurrentChannel->ChannelID); + + if (MaxDimmPerCH == 1) { + DctOdcCtl = 0x00113222; + AddrTmgCTL = 0; + } else { + DctOdcCtl = 0x00223323; + AddrTmgCTL = 0x00000039; + if (Dimms == 1) { + DctOdcCtl = 0x00113222; + AddrTmgCTL = 0; + } + } + CurrentChannel->DctAddrTmg = AddrTmgCTL; + CurrentChannel->DctOdcCtl = DctOdcCtl; + + // ODT + if (Dimms == 1) { + DramTerm = 2; // 120 ohms + DramTermDyn = 0; // Disable + if (MaxDimmPerCH == 2) { + DramTerm = 1; // 60 ohms + } + } else { + DramTerm = 3; // 40 ohms + DramTermDyn = 2; // 120 ohms + } + CurrentChannel->Reserved[0] = DramTerm; + CurrentChannel->Reserved[1] = DramTermDyn; + + // WL ODT + if (Dimms == 1) { + if (MaxDimmPerCH == 1) { + CurrentChannel->PhyWLODT[0] = (CurrentChannel->DimmDrPresent != 0) ? 4 : 1; + CurrentChannel->PhyWLODT[1] = 0; + } else { + CurrentChannel->PhyWLODT[0] = 0; + CurrentChannel->PhyWLODT[1] = (CurrentChannel->DimmDrPresent != 0) ? 8 : 2; + } + } else { + CurrentChannel->PhyWLODT[0] = 3; + CurrentChannel->PhyWLODT[1] = 3; + } + CurrentChannel->PhyWLODT[2] = 0; + CurrentChannel->PhyWLODT[3] = 0; + + return AGESA_SUCCESS; +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This is function sets the platform specific settings for the systems with RDIMMs configuration + * + * @param[in,out] *MemData Pointer to MEM_DATA_STRUCTURE + * @param[in] SocketID Socket number + * @param[in] *CurrentChannel Pointer to CH_DEF_STRUCT + * + * @return AGESA_SUCCESS + * @return CurrentChannel->DctAddrTmg Address Command Timing Settings for specified channel + * @return CurrentChannel->DctOdcCtl Drive Strength settings for specified channel + * @return CurrentChannel->Reserved[0] Dram Term for specified channel + * @return CurrentChannel->Reserved[1] Dynamic Dram Term for specified channel + * @return CurrentChannel->PhyWLODT[0] WL ODT for DIMM0 + * @return CurrentChannel->PhyWLODT[1] WL ODT for DIMM1 + * @return CurrentChannel->PhyWLODT[2] WL ODT for DIMM2 + * @return CurrentChannel->PhyWLODT[3] WL ODT for DIMM3 + * + */ + +AGESA_STATUS +MemRecNGetPsCfgRDIMM3Nb ( + IN OUT MEM_DATA_STRUCT *MemData, + IN UINT8 SocketID, + IN OUT CH_DEF_STRUCT *CurrentChannel + ) +{ + STATIC CONST ADV_R_PSCFG_WL_ODT_ENTRY RecPSCfg2DIMMsWlODT[] = { + {SR_DIMM0, {0x01, 0x00, 0x00, 0x00}, 1}, + {DR_DIMM0, {0x04, 0x00, 0x00, 0x00}, 1}, + {QR_DIMM0, {0x05, 0x00, 0x00, 0x00}, 1}, + {SR_DIMM1, {0x00, 0x02, 0x00, 0x00}, 1}, + {DR_DIMM1, {0x00, 0x08, 0x00, 0x00}, 1}, + {QR_DIMM1, {0x00, 0x0A, 0x00, 0x00}, 1}, + {SR_DIMM0 + DR_DIMM0 + SR_DIMM1 + DR_DIMM1, {0x03, 0x03, 0x00, 0x00}, 2}, + {SR_DIMM0 + QR_DIMM1, {0x0B, 0x03, 0x00, 0x09}, 2}, + {DR_DIMM0 + QR_DIMM1, {0x0B, 0x03, 0x00, 0x09}, 2}, + {QR_DIMM0 + SR_DIMM1, {0x03, 0x07, 0x06, 0x00}, 2}, + {QR_DIMM0 + DR_DIMM1, {0x03, 0x07, 0x06, 0x00}, 2}, + {QR_DIMM0 + QR_DIMM1, {0x0B, 0x07, 0x0E, 0x0D}, 2} + }; + STATIC CONST ADV_R_PSCFG_WL_ODT_ENTRY RecPSCfg3DIMMsWlODT[] = { + {SR_DIMM2 + DR_DIMM2, {0x00, 0x00, 0x04, 0x00}, 1}, + {SR_DIMM0 + DR_DIMM0, {0x01, 0x02, 0x00, 0x00}, 1}, + {SR_DIMM0 + DR_DIMM0 + SR_DIMM2 + DR_DIMM2, {0x05, 0x00, 0x05, 0x00}, 2}, + {SR_DIMM0 + DR_DIMM0 + SR_DIMM1 + DR_DIMM1 + SR_DIMM2 + DR_DIMM2, {0x07, 0x07, 0x07, 0x00}, 3}, + {QR_DIMM1, {0x00, 0x0A, 0x00, 0x0A}, 1}, + {QR_DIMM1 + SR_DIMM2 + DR_DIMM2, {0x00, 0x06, 0x0E, 0x0C}, 2}, + {SR_DIMM0 + DR_DIMM0 + QR_DIMM1, {0x0B, 0x03, 0x00, 0x09}, 2}, + {SR_DIMM0 + DR_DIMM0 + QR_DIMM1 + SR_DIMM2 + DR_DIMM2, {0x0F, 0x07, 0x0F, 0x0D}, 3} + }; + STATIC CONST ADV_R_PSCFG_WL_ODT_ENTRY RecPSCfg4DIMMsWlODT[] = { + {ANY_DIMM3, {0x00, 0x00, 0x00, 0x08}, 1}, + {ANY_DIMM2 + ANY_DIMM3, {0x00, 0x00, 0x0C, 0x0C}, 2}, + {ANY_DIMM1 + ANY_DIMM2 + ANY_DIMM3, {0x00, 0x0E, 0x0E, 0x0E}, 3}, + {ANY_DIMM0 + ANY_DIMM1 + ANY_DIMM2 + ANY_DIMM3, {0x0F, 0x0F, 0x0F, 0x0F}, 4} + }; + + UINT8 i; + UINT8 j; + UINT8 Dimms; + UINT8 DimmQrPresent; + UINT32 AddrTmgCTL; + UINT32 DctOdcCtl; + UINT8 PhyWLODT[4]; + UINT8 DramTerm; + UINT8 DramTermDyn; + UINT16 DIMMRankType; + UINT16 _DIMMRankType_; + UINT8 DimmTpMatch; + UINT8 MaxDimmPerCH; + UINT8 PSCfgWlODTSize; + CONST ADV_R_PSCFG_WL_ODT_ENTRY *PSCfgWlODTPtr; + + if (CurrentChannel->RegDimmPresent != CurrentChannel->ChDimmValid) { + return AGESA_UNSUPPORTED; + } + + DIMMRankType = MemRecNGetPsRankType (CurrentChannel); + MaxDimmPerCH = RecGetMaxDimmsPerChannel (MemData->ParameterListPtr->PlatformMemoryConfiguration, 0, CurrentChannel->ChannelID); + Dimms = CurrentChannel->Dimms; + PSCfgWlODTPtr = RecPSCfg2DIMMsWlODT; + PSCfgWlODTSize = GET_SIZE_OF (RecPSCfg2DIMMsWlODT); + PhyWLODT[0] = PhyWLODT[1] = PhyWLODT[2] = PhyWLODT[3] = 0xFF; + DimmQrPresent = CurrentChannel->DimmQrPresent; + + if (MaxDimmPerCH == 4) { + AddrTmgCTL = (Dimms > 2) ? 0x002F0000 : 0; + DctOdcCtl = (Dimms == 1) ? 0x20113222 : 0x20223222; + PSCfgWlODTPtr = RecPSCfg4DIMMsWlODT; + PSCfgWlODTSize = GET_SIZE_OF (RecPSCfg4DIMMsWlODT); + } else if (MaxDimmPerCH == 3) { + AddrTmgCTL = 0; + DctOdcCtl = 0x20223222; + if (Dimms == 3) { + AddrTmgCTL = 0x00380038; + DctOdcCtl = 0x20113222; + } + if (Dimms == 1) { + DctOdcCtl = 0x20113222; + } + PSCfgWlODTPtr = RecPSCfg3DIMMsWlODT; + PSCfgWlODTSize = GET_SIZE_OF (RecPSCfg3DIMMsWlODT); + } else if (MaxDimmPerCH == 2) { + AddrTmgCTL = 0; + DctOdcCtl = 0x20223222; + if ((Dimms == 1) && (DimmQrPresent == 0)) { + DctOdcCtl = 0x20113222; + } + } else { + AddrTmgCTL = 0; + DctOdcCtl = (DimmQrPresent == 0) ? 0x20113222 : 0x20223222; + } + CurrentChannel->DctAddrTmg = AddrTmgCTL; + CurrentChannel->DctOdcCtl = DctOdcCtl; + + // ODT + if (Dimms == 1) { + DramTerm = 1; // 60 ohms + DramTermDyn = 0; // Disable + if (DimmQrPresent != 0) { + DramTermDyn = 2; // 120 ohms + } + } else { + DramTerm = 3; // 40 ohms + DramTermDyn = 2; // 120 ohms + if (DimmQrPresent != 0) { + DramTerm = 1; // 60 ohms + } + } + CurrentChannel->Reserved[0] = DramTerm; + CurrentChannel->Reserved[1] = DramTermDyn; + + // WL ODT + for (i = 0; i < PSCfgWlODTSize; i++, PSCfgWlODTPtr++) { + if (Dimms != PSCfgWlODTPtr->Dimms) { + continue; + } + DimmTpMatch = 0; + _DIMMRankType_ = DIMMRankType & PSCfgWlODTPtr->DIMMRankType; + for (j = 0; j < MAX_DIMMS_PER_CHANNEL; j++) { + if ((_DIMMRankType_ & (UINT16) 0x0F << (j << 2)) != 0) { + DimmTpMatch++; + } + } + if (DimmTpMatch == PSCfgWlODTPtr->Dimms) { + PhyWLODT[0] = PSCfgWlODTPtr->PhyWrLvOdt[0]; + PhyWLODT[1] = PSCfgWlODTPtr->PhyWrLvOdt[1]; + PhyWLODT[2] = PSCfgWlODTPtr->PhyWrLvOdt[2]; + PhyWLODT[3] = PSCfgWlODTPtr->PhyWrLvOdt[3]; + break; + } + } + CurrentChannel->PhyWLODT[0] = PhyWLODT[0]; + CurrentChannel->PhyWLODT[1] = PhyWLODT[1]; + CurrentChannel->PhyWLODT[2] = PhyWLODT[2]; + CurrentChannel->PhyWLODT[3] = PhyWLODT[3]; + + return AGESA_SUCCESS; +} + + +/* -----------------------------------------------------------------------------*/ +/** + * + * + * This function returns the max dimms for a given memory channel on a given + * processor. It first searches the platform override table for the max dimms + * value. If it is not provided, the AGESA default value is returned. The target + * socket must be a valid present socket. + * + * @param[in] PlatformMemoryConfiguration - Platform config table + * @param[in] SocketID - ID of the processor that owns the channel + * @param[in] ChannelID - Channel to get max dimms for + * + * + * @return UINT8 - Max Number of Dimms for that channel + */ +UINT8 +RecGetMaxDimmsPerChannel ( + IN PSO_TABLE *PlatformMemoryConfiguration, + IN UINT8 SocketID, + IN UINT8 ChannelID + ) +{ + UINT8 *DimmsPerChPtr; + UINT8 MaxDimmPerCH; + + DimmsPerChPtr = MemRecFindPSOverrideEntry (PlatformMemoryConfiguration, PSO_MAX_DIMMS, SocketID, ChannelID); + if (DimmsPerChPtr != NULL) { + MaxDimmPerCH = *DimmsPerChPtr; + } else { + MaxDimmPerCH = 2; + } + + return MaxDimmPerCH; +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This is the default return function of the ARDK block. The function always + * returns AGESA_UNSUPPORTED + * + * @param[in,out] *MemData Pointer to MEM_DATA_STRUCTURE + * @param[in] SocketID Socket number + * @param[in] *CurrentChannel Pointer to CH_DEF_STRUCT + * + * @return AGESA_UNSUPPORTED AGESA status indicating that default is unsupported + * + */ + +AGESA_STATUS +MemRecNGetPsCfgDef ( + IN OUT MEM_DATA_STRUCT *MemData, + IN UINT8 SocketID, + IN OUT CH_DEF_STRUCT *CurrentChannel + ) +{ + return AGESA_UNSUPPORTED; +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function returns the rank type map of a channel. + * + * @param[in] *CurrentChannel Pointer to CH_DEF_STRUCT + * + * @return UINT16 - The map of rank type. + * + */ +UINT16 +MemRecNGetPsRankType ( + IN CH_DEF_STRUCT *CurrentChannel + ) +{ + UINT8 i; + UINT16 DIMMRankType; + + DIMMRankType = 0; + for (i = 0; i < MAX_DIMMS_PER_CHANNEL; i++) { + if ((CurrentChannel->DimmQrPresent & (UINT8) 1 << i) != 0) { + if (i < 2) { + DIMMRankType |= (UINT16) 4 << (i << 2); + } + } else if ((CurrentChannel->DimmDrPresent & (UINT8) 1 << i) != 0) { + DIMMRankType |= (UINT16) 2 << (i << 2); + } else if ((CurrentChannel->DimmSRPresent & (UINT8) 1 << i) != 0) { + DIMMRankType |= (UINT16) 1 << (i << 2); + } + } + return DIMMRankType; +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * + * This function initializes the DDR phy compensation logic + * + * @param[in,out] *NBPtr - Pointer to the MEM_NB_BLOCK + * + */ + +VOID +STATIC +MemRecNInitPhyCompClientNb ( + IN OUT MEM_NB_BLOCK *NBPtr + ) +{ + // Slew rate table array [x] + // array[0]: slew rate for VDDIO 1.5V + // array[1]: slew rate for VDDIO 1.35V + CONST STATIC UINT16 RecTxPrePNDataDqs[2][4] = { + //{TxPreP, TxPreN}[VDDIO][Drive Strength] + {0x924, 0x924, 0x924, 0x924}, + {0xFF6, 0xB6D, 0xB6D, 0x924} + }; + + CONST STATIC UINT16 RecTxPrePNCmdAddr[2][4] = { + //{TxPreP, TxPreN}[VDDIO][Drive Strength] + {0x492, 0x492, 0x492, 0x492}, + {0x492, 0x492, 0x492, 0x492} + }; + CONST STATIC UINT16 RecTxPrePNClock[2][4] = { + //{TxPreP, TxPreN}[VDDIO][Drive Strength] + {0x924, 0x924, 0x924, 0x924}, + {0xDAD, 0xDAD, 0x924, 0x924} + }; + + // + // Tables to describe the relationship between drive strength bit fields, PreDriver Calibration bit fields and also + // the extra value that needs to be written to specific PreDriver bit fields + // + CONST REC_PHY_COMP_INIT_CLIENTNB RecPhyCompInitBitField[] = { + // 3. Program TxPreP/TxPreN for Data and DQS according toTable 14 if VDDIO is 1.5V or Table 15 if 1.35V. + // A. Program D18F2x[1,0]9C_x0D0F_0[F,7:0]0[A,6]={0000b, TxPreP, TxPreN}. + // B. Program D18F2x[1,0]9C_x0D0F_0[F,7:0]02={1000b, TxPreP, TxPreN}. + {BFDqsDrvStren, BFDataByteTxPreDriverCal2Pad1, BFDataByteTxPreDriverCal2Pad1, 0, RecTxPrePNDataDqs}, + {BFDataDrvStren, BFDataByteTxPreDriverCal2Pad2, BFDataByteTxPreDriverCal2Pad2, 0, RecTxPrePNDataDqs}, + {BFDataDrvStren, BFDataByteTxPreDriverCal, BFDataByteTxPreDriverCal, 8, RecTxPrePNDataDqs}, + // 4. Program TxPreP/TxPreN for Cmd/Addr according toTable 16 if VDDIO is 1.5V or Table 17 if 1.35V. + // A. Program D18F2x[1,0]9C_x0D0F_[C,8][1:0][12,0E,0A,06]={0000b, TxPreP, TxPreN}. + // B. Program D18F2x[1,0]9C_x0D0F_[C,8][1:0]02={1000b, TxPreP, TxPreN}. + {BFCsOdtDrvStren, BFCmdAddr0TxPreDriverCal2Pad1, BFCmdAddr0TxPreDriverCal2Pad2, 0, RecTxPrePNCmdAddr}, + {BFAddrCmdDrvStren, BFCmdAddr1TxPreDriverCal2Pad1, BFAddrTxPreDriverCal2Pad4, 0, RecTxPrePNCmdAddr}, + {BFCsOdtDrvStren, BFCmdAddr0TxPreDriverCalPad0, BFCmdAddr0TxPreDriverCalPad0, 8, RecTxPrePNCmdAddr}, + {BFCkeDrvStren, BFAddrTxPreDriverCalPad0, BFAddrTxPreDriverCalPad0, 8, RecTxPrePNCmdAddr}, + {BFAddrCmdDrvStren, BFCmdAddr1TxPreDriverCalPad0, BFCmdAddr1TxPreDriverCalPad0, 8, RecTxPrePNCmdAddr}, + // 5. Program TxPreP/TxPreN for Clock according toTable 18 if VDDIO is 1.5V or Table 19 if 1.35V. + // A. Program D18F2x[1,0]9C_x0D0F_2[1:0]02={1000b, TxPreP, TxPreN}. + {BFClkDrvStren, BFClock0TxPreDriverCalPad0, BFClock1TxPreDriverCalPad0, 8, RecTxPrePNClock} + }; + + BIT_FIELD_NAME CurrentBitField; + CONST UINT16 *TxPrePNArray; + UINT8 Voltage; + UINT8 CurDct; + UINT8 i; + UINT8 j; + + CurDct = NBPtr->Dct; + NBPtr->SwitchDCT (NBPtr, 0); + // 1. Program D18F2x[1,0]9C_x0D0F_E003[DisAutoComp, DisalbePredriverCal]={1b, 1b} + MemRecNSetBitFieldNb (NBPtr, BFDisablePredriverCal, 0x6000); + + NBPtr->SwitchDCT (NBPtr, CurDct); + + Voltage = (UINT8) NBPtr->RefPtr->DDR3Voltage; + + for (j = 0; j < GET_SIZE_OF (RecPhyCompInitBitField); j ++) { + i = (UINT8) MemRecNGetBitFieldNb (NBPtr, RecPhyCompInitBitField[j].IndexBitField); + TxPrePNArray = RecPhyCompInitBitField[j].TxPrePN[Voltage]; + for (CurrentBitField = RecPhyCompInitBitField[j].StartTargetBitField; CurrentBitField <= RecPhyCompInitBitField[j].EndTargetBitField; CurrentBitField ++) { + MemRecNSetBitFieldNb (NBPtr, CurrentBitField, ((RecPhyCompInitBitField[j].ExtraValue << 12) | TxPrePNArray[i])); + } + } +} |