diff options
Diffstat (limited to 'src/vendorcode/amd/agesa/f15tn/Proc/Mem/Tech/DDR3/mtsdi3.c')
| -rw-r--r-- | src/vendorcode/amd/agesa/f15tn/Proc/Mem/Tech/DDR3/mtsdi3.c | 530 |
1 files changed, 530 insertions, 0 deletions
diff --git a/src/vendorcode/amd/agesa/f15tn/Proc/Mem/Tech/DDR3/mtsdi3.c b/src/vendorcode/amd/agesa/f15tn/Proc/Mem/Tech/DDR3/mtsdi3.c new file mode 100644 index 0000000000..1c0f27db11 --- /dev/null +++ b/src/vendorcode/amd/agesa/f15tn/Proc/Mem/Tech/DDR3/mtsdi3.c @@ -0,0 +1,530 @@ +/* $NoKeywords:$ */ +/** + * @file + * + * mtsdi3.c + * + * Technology Software DRAM Init for DDR3 + * + * @xrefitem bom "File Content Label" "Release Content" + * @e project: AGESA + * @e sub-project: (Mem/Tech/DDR3) + * @e \$Revision: 63425 $ @e \$Date: 2011-12-22 11:24:10 -0600 (Thu, 22 Dec 2011) $ + * + **/ +/***************************************************************************** +* +* Copyright 2008 - 2012 ADVANCED MICRO DEVICES, INC. All Rights Reserved. +* +* AMD is granting you permission to use this software (the Materials) +* pursuant to the terms and conditions of your Software License Agreement +* with AMD. This header does *NOT* give you permission to use the Materials +* or any rights under AMD's intellectual property. Your use of any portion +* of these Materials shall constitute your acceptance of those terms and +* conditions. If you do not agree to the terms and conditions of the Software +* License Agreement, please do not use any portion of these Materials. +* +* CONFIDENTIALITY: The Materials and all other information, identified as +* confidential and provided to you by AMD shall be kept confidential in +* accordance with the terms and conditions of the Software License Agreement. +* +* LIMITATION OF LIABILITY: THE MATERIALS AND ANY OTHER RELATED INFORMATION +* PROVIDED TO YOU BY AMD ARE PROVIDED "AS IS" WITHOUT ANY EXPRESS OR IMPLIED +* WARRANTY OF ANY KIND, INCLUDING BUT NOT LIMITED TO WARRANTIES OF +* MERCHANTABILITY, NONINFRINGEMENT, TITLE, FITNESS FOR ANY PARTICULAR PURPOSE, +* OR WARRANTIES ARISING FROM CONDUCT, COURSE OF DEALING, OR USAGE OF TRADE. +* IN NO EVENT SHALL AMD OR ITS LICENSORS BE LIABLE FOR ANY DAMAGES WHATSOEVER +* (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS OF PROFITS, BUSINESS +* INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF AMD'S NEGLIGENCE, +* GROSS NEGLIGENCE, THE USE OF OR INABILITY TO USE THE MATERIALS OR ANY OTHER +* RELATED INFORMATION PROVIDED TO YOU BY AMD, EVEN IF AMD HAS BEEN ADVISED OF +* THE POSSIBILITY OF SUCH DAMAGES. BECAUSE SOME JURISDICTIONS PROHIBIT THE +* EXCLUSION OR LIMITATION OF LIABILITY FOR CONSEQUENTIAL OR INCIDENTAL DAMAGES, +* THE ABOVE LIMITATION MAY NOT APPLY TO YOU. +* +* AMD does not assume any responsibility for any errors which may appear in +* the Materials or any other related information provided to you by AMD, or +* result from use of the Materials or any related information. +* +* You agree that you will not reverse engineer or decompile the Materials. +* +* NO SUPPORT OBLIGATION: AMD is not obligated to furnish, support, or make any +* further information, software, technical information, know-how, or show-how +* available to you. Additionally, AMD retains the right to modify the +* Materials at any time, without notice, and is not obligated to provide such +* modified Materials to you. +* +* U.S. GOVERNMENT RESTRICTED RIGHTS: The Materials are provided with +* "RESTRICTED RIGHTS." Use, duplication, or disclosure by the Government is +* subject to the restrictions as set forth in FAR 52.227-14 and +* DFAR252.227-7013, et seq., or its successor. Use of the Materials by the +* Government constitutes acknowledgement of AMD's proprietary rights in them. +* +* EXPORT ASSURANCE: You agree and certify that neither the Materials, nor any +* direct product thereof will be exported directly or indirectly, into any +* country prohibited by the United States Export Administration Act and the +* regulations thereunder, without the required authorization from the U.S. +* government nor will be used for any purpose prohibited by the same. +* *************************************************************************** +* +*/ + + +/* + *---------------------------------------------------------------------------- + * MODULES USED + * + *---------------------------------------------------------------------------- + */ + + + +#include "AGESA.h" +#include "Ids.h" +#include "mm.h" +#include "mn.h" +#include "mu.h" +#include "mt.h" +#include "mt3.h" +#include "mtsdi3.h" +#include "mtrci3.h" +#include "merrhdl.h" +#include "Filecode.h" +CODE_GROUP (G1_PEICC) +RDATA_GROUP (G1_PEICC) +#define FILECODE PROC_MEM_TECH_DDR3_MTSDI3_FILECODE +/*---------------------------------------------------------------------------- + * DEFINITIONS AND MACROS + * + *---------------------------------------------------------------------------- + */ + +/*---------------------------------------------------------------------------- + * TYPEDEFS AND STRUCTURES + * + *---------------------------------------------------------------------------- + */ + +/*---------------------------------------------------------------------------- + * PROTOTYPES OF LOCAL FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + +/*---------------------------------------------------------------------------- + * EXPORTED FUNCTIONS + * + *---------------------------------------------------------------------------- + */ + + + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function initiates software DRAM init for both DCTs + * at the same time. + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + */ + +BOOLEAN +MemTDramInitSw3 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + UINT8 Dct; + UINT8 ChipSel; + + MEM_DATA_STRUCT *MemPtr; + DIE_STRUCT *MCTPtr; + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + MemPtr = NBPtr->MemPtr; + MCTPtr = NBPtr->MCTPtr; + + IDS_HDT_CONSOLE (MEM_STATUS, "\nStart Dram Init\n"); + // 3.Program F2x[1,0]7C[EnDramInit]=1 + IDS_HDT_CONSOLE (MEM_FLOW, "\tEnDramInit = 1 for both DCTs\n"); + NBPtr->BrdcstSet (NBPtr, BFEnDramInit, 1); + NBPtr->PollBitField (NBPtr, BFDctAccessDone, 1, PCI_ACCESS_TIMEOUT, TRUE); + + // 4.wait 200us + MemUWait10ns (20000, MemPtr); + + // 5.Program F2x[1, 0]7C[DeassertMemRstX] = 1. + NBPtr->BrdcstSet (NBPtr, BFDeassertMemRstX, 1); + + // 6.wait 500us + MemUWait10ns (50000, MemPtr); + + // Do Phy Fence training before sending MRS commands + if (!NBPtr->IsSupported[FenceTrnBeforeDramInit]) { + AGESA_TESTPOINT (TpProcMemPhyFenceTraining, &(NBPtr->MemPtr->StdHeader)); + for (Dct = 0; Dct < NBPtr->DctCount; Dct++) { + NBPtr->SwitchDCT (NBPtr, Dct); + if (NBPtr->DCTPtr->Timings.DctMemSize != 0) { + IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct); + NBPtr->PhyFenceTraining (NBPtr); + } + } + } + + // 7.NOP or deselect & take CKE high + NBPtr->BrdcstSet (NBPtr, BFAssertCke, 1); + + // 8.wait 360ns + MemUWait10ns (36, MemPtr); + + // The following steps are performed once for each channel with unbuffered DIMMs + // and once for each chip select on registered DIMMs: + for (Dct = 0; Dct < NBPtr->DctCount; Dct++) { + NBPtr->SwitchDCT (NBPtr, Dct); + if (NBPtr->DCTPtr->Timings.DctMemSize != 0) { + IDS_HDT_CONSOLE (MEM_STATUS, "\tDct %d\n", Dct); + + // Enable Dram Parity if appropriate. + NBPtr->FamilySpecificHook[EnableParityAfterMemRst] (NBPtr, NULL); + + // The following steps are performed with registered DIMMs only and + // must be done for each chip select pair: + if (MCTPtr->Status[SbRegistered]) { + MemTDramControlRegInit3 (TechPtr); + } + + // Initialize LRDIMM's register + TechPtr->TechnologySpecificHook[LrdimmControlRegInit] (TechPtr, NULL); + + for (ChipSel = 0; ChipSel < MAX_CS_PER_CHANNEL; ChipSel++) { + if ((NBPtr->DCTPtr->Timings.CsPresent & ((UINT16)1 << ChipSel)) != 0) { + IDS_HDT_CONSOLE (MEM_STATUS, "\t\tCS %d\n", ChipSel); + // if chip select present + if (!(TechPtr->TechnologySpecificHook[LrdimmSendAllMRCmds] (TechPtr, &ChipSel))) { + MemTSendAllMRCmds3 (TechPtr, ChipSel); + } + // NOTE: wait 512 clocks for DLL-relock + MemUWait10ns (50000, NBPtr->MemPtr); // wait 500us + if (!(MCTPtr->Status[SbRegistered] || MCTPtr->Status[SbLrdimms])) { + break; + } + } + } + + // 17.Send two ZQCL commands (to even then odd chip select) + NBPtr->sendZQCmd (NBPtr); + NBPtr->sendZQCmd (NBPtr); + } + } + + // 18.Program F2x[1,0]7C[EnDramInit]=0 + NBPtr->BrdcstSet (NBPtr, BFEnDramInit, 0); + NBPtr->PollBitField (NBPtr, BFDctAccessDone, 1, PCI_ACCESS_TIMEOUT, TRUE); + // + // For Unbuffered Dimms, Issue MRS for remaining CS without EnDramInit + // + NBPtr->FamilySpecificHook[SendMrsCmdsPerCs] (NBPtr, NBPtr); + + IDS_HDT_CONSOLE (MEM_FLOW, "End Dram Init\n\n"); + return (BOOLEAN) (MCTPtr->ErrCode < AGESA_FATAL); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function calculates the EMRS1 value + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] Wl - Indicates if WL mode should be enabled + * @param[in] TargetDIMM - DIMM target for WL + */ + +VOID +MemTEMRS13 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN BOOLEAN Wl, + IN UINT8 TargetDIMM + ) +{ + UINT16 MrsAddress; + UINT8 MaxDimmPerCH; + UINT8 ChipSel; + UINT8 Value8; + + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + MaxDimmPerCH = GetMaxDimmsPerChannel (NBPtr->RefPtr->PlatformMemoryConfiguration, + NBPtr->MCTPtr->SocketId, + NBPtr->ChannelPtr->ChannelID); + ChipSel = (UINT8) (0x0FF & NBPtr->GetBitField (NBPtr, BFMrsChipSel)); + + // BA2=0,BA1=0,BA0=1 + NBPtr->SetBitField (NBPtr, BFMrsBank, 1); + + MrsAddress = 0; + + // program MrsAddress[5,1]=output driver impedance control (DIC): + // based on F2x[1,0]84[DrvImpCtrl] + if (!(NBPtr->IsSupported[CheckDrvImpCtrl])) { + Value8 = (UINT8)NBPtr->GetBitField (NBPtr, BFDrvImpCtrl); + if ((Value8 & ((UINT8) 1 << 1)) != 0) { + MrsAddress |= ((UINT16) 1 << 5); + } + if ((Value8 & ((UINT8) 1 << 0)) != 0) { + MrsAddress |= ((UINT16) 1 << 1); + } + } else { + MrsAddress |= ((UINT16) 1 << 1); + } + // program MrsAddress[9,6,2]=nominal termination resistance of ODT (RTT): + // Different CS may have different RTT. + // + Value8 = NBPtr->MemNGetDramTerm (NBPtr, ChipSel); + + // + // If Write Leveling this DIMM + // + if (Wl) { + if ((ChipSel / NBPtr->CsPerDelay) == TargetDIMM) { + // Program MrsAddress[7] = 1 for Write leveling enable + MrsAddress |= ((UINT16) 1 << 7); + if (ChipSel & 1) { + // Output buffer disabled, MrsAddress[7] (Qoff = 1) + MrsAddress |= ((UINT16) 1 << 12); + } + // Set Rtt_Nom = Rtt_Wr if there are 2 or more dimms + if ((NBPtr->ChannelPtr->DimmQrPresent != 0) || (NBPtr->ChannelPtr->Dimms >= 2)) { + Value8 = NBPtr->MemNGetDynDramTerm (NBPtr, ChipSel); + } else if (NBPtr->IsSupported[WlRttNomFor1of3Cfg] && (MaxDimmPerCH == 3)) { + // For some family, set Rtt_Nom = Rtt_Wr in one of three DIMMs per channel configurations + Value8 = NBPtr->MemNGetDynDramTerm (NBPtr, ChipSel); + } + } + NBPtr->FamilySpecificHook[WLMR1] (NBPtr, &MrsAddress); + } + // + // Turn off Rtt_Nom (DramTerm=0) for certain CS in certain configs. + // + // All odd CS for 4 Dimm Systems + if (MaxDimmPerCH == 4) { + if (ChipSel & 0x01) { + Value8 = 0; + } + // CS 1 and 5 for 3 Dimm configs + } else if (MaxDimmPerCH == 3) { + if ((ChipSel == 1) || (ChipSel == 5)) { + Value8 = 0; + } + } + // All odd CS of any QR Dimms + if ((NBPtr->ChannelPtr->DimmQrPresent & ((UINT8) (1 << (ChipSel >> 1)))) != 0) { + if (ChipSel & 0x01) { + Value8 = 0; + } + } + if ((Value8 & ((UINT8) 1 << 2)) != 0) { + MrsAddress |= ((UINT16) 1 << 9); + } + if ((Value8 & ((UINT8) 1 << 1)) != 0) { + MrsAddress |= ((UINT16) 1 << 6); + } + if ((Value8 & ((UINT8) 1 << 0)) != 0) { + MrsAddress |= ((UINT16) 1 << 2); + } + + // program MrsAddress[12]=output disable (QOFF): + // based on F2x[1,0]84[Qoff] + + if (!NBPtr->IsSupported[CheckQoff]) { + if (NBPtr->GetBitField (NBPtr, BFQoff) != 0) { + MrsAddress |= ((UINT16) 1 << 12); + } + } + + // program MrsAddress[11]=TDQS: + // based on F2x[1,0]94[RDqsEn] + + if ((NBPtr->DCTPtr->Timings.Dimmx4Present != 0) && (NBPtr->DCTPtr->Timings.Dimmx8Present != 0)) { + if (!(NBPtr->IsSupported[SetTDqsForx8DimmOnly]) || ((NBPtr->DCTPtr->Timings.Dimmx8Present & ((UINT8) 1 << (ChipSel >> 1))) != 0)) { + MrsAddress |= ((UINT16) 1 << 11); + } + } + + NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function calculates the EMRS2 value + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + */ + +VOID +MemTEMRS23 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + UINT32 MrsAddress; + UINT8 DramTermDyn; + UINT8 MaxDimmPerCH; + UINT8 ChipSel; + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + + MaxDimmPerCH = GetMaxDimmsPerChannel (NBPtr->RefPtr->PlatformMemoryConfiguration, NBPtr->MCTPtr->SocketId, NBPtr->ChannelPtr->ChannelID ); + ChipSel = (UINT8) (0x0FF & NBPtr->GetBitField (NBPtr, BFMrsChipSel)); + + // BA2=0,BA1=1,BA0=0 + NBPtr->SetBitField (NBPtr, BFMrsBank, 2); + + // program MrsAddress[5:3]=CAS write latency (CWL): + MrsAddress = NBPtr->MemNGetMR2CWL (NBPtr); + + // program MrsAddress[6]=auto self refresh method (ASR): + // program MrsAddress[7]=self refresh temperature range (SRT): + MrsAddress |= 1 << 6; + MrsAddress &= ( ~ (1 << 7)); + + // program MrsAddress[10:9]=dynamic termination during writes (RTT_WR): + DramTermDyn = NBPtr->MemNGetDynDramTerm (NBPtr, ChipSel); + // Special Case for 1 DR Unbuffered Dimm in 3 Dimm/Ch + if (!(NBPtr->MCTPtr->Status[SbRegistered])) { + if (MaxDimmPerCH == 3) { + if (NBPtr->ChannelPtr->Dimms == 1) { + if ((NBPtr->ChannelPtr->DimmDrPresent & ((UINT8) (1 << (ChipSel >> 1)))) != 0) { + DramTermDyn = 1; + } + } + } + } + MrsAddress |= (UINT16) DramTermDyn << 9; + + NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This function calculates the EMRS3 value + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + */ + +VOID +MemTEMRS33 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + + // BA2=0,BA1=1,BA0=1 + NBPtr->SetBitField (NBPtr, BFMrsBank, 3); + + // program MrsAddress[1:0]=multi purpose register address location + // (MPR Location):based on F2x[1,0]84[MprLoc] + // program MrsAddress[2]=multi purpose register + // (MPR):based on F2x[1,0]84[MprEn] + NBPtr->SetBitField (NBPtr, BFMrsAddress, (NBPtr->GetBitField (NBPtr, BFDramMRSReg) >> 24) & 0x0007); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This sets MRS value + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * + */ + +VOID +MemTMRS3 ( + IN OUT MEM_TECH_BLOCK *TechPtr + ) +{ + UINT32 MrsAddress; + MEM_NB_BLOCK *NBPtr; + UINT32 Ppd; + + NBPtr = TechPtr->NBPtr; + + // BA2=0,BA1=0,BA0=0 + NBPtr->SetBitField (NBPtr, BFMrsBank, 0); + + // program MrsAddress[1:0]=burst length and control method + // (BL):based on F2x[1,0]84[BurstCtrl] + MrsAddress = NBPtr->GetBitField (NBPtr, BFBurstCtrl); + + // program MrsAddress[3]=1 (BT):interleaved + MrsAddress |= (UINT16) 1 << 3; + + // program MrsAddress[6:4,2]=read CAS latency + MrsAddress |= NBPtr->MemNGetMR0CL (NBPtr); + + // program MrsAddress[11:9]=write recovery for auto-precharge + MrsAddress |= NBPtr->MemNGetMR0WR (NBPtr); + + // program MrsAddress[12] (PPD):based on F2x[1,0]84[PChgPDModeSel] + Ppd = NBPtr->GetBitField (NBPtr, BFPchgPDModeSel); + NBPtr->FamilySpecificHook[MR0_PPD] (NBPtr, &Ppd); + IDS_OPTION_HOOK (IDS_MEM_MR0, &Ppd, &TechPtr->NBPtr->MemPtr->StdHeader); + MrsAddress |= Ppd << 12; + + // program MrsAddress[8]=1 (DLL):DLL reset + MrsAddress |= (UINT32) 1 << 8; + + // During memory initialization, the value sent to MR0 is saved for S3 resume + NBPtr->MemNSaveMR0 (NBPtr, MrsAddress); + + NBPtr->SetBitField (NBPtr, BFMrsAddress, MrsAddress); +} + +/* -----------------------------------------------------------------------------*/ +/** + * + * This send all MR commands to a rank in sequence 2-3-1-0 + * + * @param[in,out] *TechPtr - Pointer to the MEM_TECH_BLOCK + * @param[in] ChipSel - Target Chip Select + */ + +VOID +MemTSendAllMRCmds3 ( + IN OUT MEM_TECH_BLOCK *TechPtr, + IN UINT8 ChipSel + ) +{ + MEM_NB_BLOCK *NBPtr; + + NBPtr = TechPtr->NBPtr; + + NBPtr->SetBitField (NBPtr, BFMrsChipSel, ChipSel); + + // 13.Send EMRS(2) + MemTEMRS23 (TechPtr); + AGESA_TESTPOINT (TpProcMemSendMRS2, &(NBPtr->MemPtr->StdHeader)); + NBPtr->SendMrsCmd (NBPtr); + + // 14.Send EMRS(3). Ordinarily at this time, MrsAddress[2:0]=000b + MemTEMRS33 (TechPtr); + AGESA_TESTPOINT (TpProcMemSendMRS3, &(NBPtr->MemPtr->StdHeader)); + NBPtr->SendMrsCmd (NBPtr); + + // 15.Send EMRS(1). + MemTEMRS13 (TechPtr, FALSE, (ChipSel >> 1)); + AGESA_TESTPOINT (TpProcMemSendMRS1, &(NBPtr->MemPtr->StdHeader)); + NBPtr->SendMrsCmd (NBPtr); + + // 16.Send MRS with MrsAddress[8]=1(reset the DLL) + MemTMRS3 (TechPtr); + AGESA_TESTPOINT (TpProcMemSendMRS0, &(NBPtr->MemPtr->StdHeader)); + NBPtr->SendMrsCmd (NBPtr); +} |