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authorMatthias Jung <jungma@eit.uni-kl.de>2015-06-07 14:02:40 -0500
committerMatthias Jung <jungma@eit.uni-kl.de>2015-06-07 14:02:40 -0500
commit25fe4c25291db84c314ed979b3afbb49a3fa7306 (patch)
tree12ec9beffb43c9ff2423a65927651a30ae4b959f
parent736d3314bff0f3457ee9c86989a2942f4fbce510 (diff)
downloadgem5-25fe4c25291db84c314ed979b3afbb49a3fa7306.tar.xz
mem: Add HMC Timing Parameters
A single HMC-2500 x32 model based on: [1] DRAMSpec: a high-level DRAM bank modelling tool developed at the University of Kaiserslautern. This high level tool uses RC (resistance-capacitance) and CV (capacitance-voltage) models to estimate the DRAM bank latency and power numbers. [2] A Logic-base Interconnect for Supporting Near Memory Computation in the Hybrid Memory Cube (E. Azarkhish et. al) Assumed for the HMC model is a 30 nm technology node. The modelled HMC consists of a 4 Gbit part with 4 layers connected with TSVs. Each layer has 16 vaults and each vault consists of 2 banks per layer. In order to be able to use the same controller used for 2D DRAM generations for HMC, the following analogy is done: Channel (DDR) => Vault (HMC) device_size (DDR) => size of a single layer in a vault ranks per channel (DDR) => number of layers banks per rank (DDR) => banks per layer devices per rank (DDR) => devices per layer ( 1 for HMC). The parameters for which no input is available are inherited from the DDR3 configuration.
-rw-r--r--src/mem/DRAMCtrl.py89
1 files changed, 89 insertions, 0 deletions
diff --git a/src/mem/DRAMCtrl.py b/src/mem/DRAMCtrl.py
index 60b3b251e..ef187a31c 100644
--- a/src/mem/DRAMCtrl.py
+++ b/src/mem/DRAMCtrl.py
@@ -11,6 +11,7 @@
# modified or unmodified, in source code or in binary form.
#
# Copyright (c) 2013 Amin Farmahini-Farahani
+# Copyright (c) 2015 University of Kaiserslautern
# All rights reserved.
#
# Redistribution and use in source and binary forms, with or without
@@ -38,6 +39,8 @@
#
# Authors: Andreas Hansson
# Ani Udipi
+# Omar Naji
+# Matthias Jung
from m5.params import *
from AbstractMemory import *
@@ -374,6 +377,92 @@ class DDR3_1600_x64(DRAMCtrl):
IDD5 = '220mA'
VDD = '1.5V'
+# A single HMC-2500 x32 model based on:
+# [1] DRAMSpec: a high-level DRAM bank modelling tool
+# developed at the University of Kaiserslautern. This high level tool
+# uses RC (resistance-capacitance) and CV (capacitance-voltage) models to
+# estimate the DRAM bank latency and power numbers.
+# [2] A Logic-base Interconnect for Supporting Near Memory Computation in the
+# Hybrid Memory Cube (E. Azarkhish et. al)
+# Assumed for the HMC model is a 30 nm technology node.
+# The modelled HMC consists of 4 Gbit layers which sum up to 2GB of memory (4
+# layers).
+# Each layer has 16 vaults and each vault consists of 2 banks per layer.
+# In order to be able to use the same controller used for 2D DRAM generations
+# for HMC, the following analogy is done:
+# Channel (DDR) => Vault (HMC)
+# device_size (DDR) => size of a single layer in a vault
+# ranks per channel (DDR) => number of layers
+# banks per rank (DDR) => banks per layer
+# devices per rank (DDR) => devices per layer ( 1 for HMC).
+# The parameters for which no input is available are inherited from the DDR3
+# configuration.
+# This configuration includes the latencies from the DRAM to the logic layer of
+# the HMC
+class HMC_2500_x32(DDR3_1600_x64):
+ # size of device
+ # two banks per device with each bank 4MB [2]
+ device_size = '8MB'
+
+ # 1x32 configuration, 1 device with 32 TSVs [2]
+ device_bus_width = 32
+
+ # HMC is a BL8 device [2]
+ burst_length = 8
+
+ # Each device has a page (row buffer) size of 256 bytes [2]
+ device_rowbuffer_size = '256B'
+
+ # 1x32 configuration, so 1 device [2]
+ devices_per_rank = 1
+
+ # 4 layers so 4 ranks [2]
+ ranks_per_channel = 4
+
+ # HMC has 2 banks per layer [2]
+ # Each layer represents a rank. With 4 layers and 8 banks in total, each
+ # layer has 2 banks; thus 2 banks per rank.
+ banks_per_rank = 2
+
+ # 1250 MHz [2]
+ tCK = '0.8ns'
+
+ # 8 beats across an x32 interface translates to 4 clocks @ 1250 MHz
+ tBURST = '3.2ns'
+
+ # Values using DRAMSpec HMC model [1]
+ tRCD = '10.2ns'
+ tCL = '9.9ns'
+ tRP = '7.7ns'
+ tRAS = '21.6ns'
+
+ # tRRD depends on the power supply network for each vendor.
+ # We assume a tRRD of a double bank approach to be equal to 4 clock
+ # cycles (Assumption)
+ tRRD = '3.2ns'
+
+ # activation limit is set to 0 since there are only 2 banks per vault layer.
+ activation_limit = 0
+
+ # Values using DRAMSpec HMC model [1]
+ tRFC = '59ns'
+ tWR = '8ns'
+ tRTP = '4.9ns'
+
+ # Default different rank bus delay assumed to 1 CK for TSVs, @1250 MHz = 0.8
+ # ns (Assumption)
+ tCS = '0.8ns'
+
+ # Value using DRAMSpec HMC model [1]
+ tREFI = '3.9us'
+
+ # Set default controller parameters
+ page_policy = 'close'
+ write_buffer_size = 8
+ read_buffer_size = 8
+ addr_mapping = 'RoCoRaBaCh'
+ min_writes_per_switch = 8
+
# A single DDR3-2133 x64 channel refining a selected subset of the
# options for the DDR-1600 configuration, based on the same DDR3-1600
# 4 Gbit datasheet (Micron MT41J512M8). Most parameters are kept