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authorAndreas Hansson <andreas.hansson@arm.com>2014-05-09 18:58:49 -0400
committerAndreas Hansson <andreas.hansson@arm.com>2014-05-09 18:58:49 -0400
commitcc4ca78f99f1e08309461554362ec09d3e5eed26 (patch)
tree29d45dafc8558247215ea07527e8c5e4a5d1992d
parent8c56efe74799b8495ad4dbee061ac62ddbf534d4 (diff)
downloadgem5-cc4ca78f99f1e08309461554362ec09d3e5eed26.tar.xz
mem: Add DRAM cycle time
This patch extends the current timing parameters with the DRAM cycle time. This is needed as the DRAMPower tool expects timestamps in DRAM cycles. At the moment we could get away with doing this in a post-processing step as the DRAMPower execution is separate from the simulation run. However, in the long run we want the tool to be called during the simulation, and then the cycle time is needed.
-rw-r--r--src/mem/DRAMCtrl.py18
-rw-r--r--src/mem/dram_ctrl.cc2
-rw-r--r--src/mem/dram_ctrl.hh1
3 files changed, 20 insertions, 1 deletions
diff --git a/src/mem/DRAMCtrl.py b/src/mem/DRAMCtrl.py
index e729e9d78..c53e90e87 100644
--- a/src/mem/DRAMCtrl.py
+++ b/src/mem/DRAMCtrl.py
@@ -119,6 +119,9 @@ class DRAMCtrl(AbstractMemory):
# timing behaviour and constraints - all in nanoseconds
+ # the base clock period of the DRAM
+ tCK = Param.Latency("Clock period")
+
# the amount of time in nanoseconds from issuing an activate command
# to the data being available in the row buffer for a read/write
tRCD = Param.Latency("RAS to CAS delay")
@@ -195,6 +198,9 @@ class DDR3_1600_x64(DRAMCtrl):
# DDR3 has 8 banks in all configurations
banks_per_rank = 8
+ # 800 MHz
+ tCK = '1.25ns'
+
# DDR3-1600 11-11-11-28
tRCD = '13.75ns'
tCL = '13.75ns'
@@ -256,6 +262,9 @@ class DDR3_1333_x64_DRAMSim2(DRAMCtrl):
# DDR3 has 8 banks in all configurations
banks_per_rank = 8
+ # 666 MHs
+ tCK = '1.5ns'
+
tRCD = '15ns'
tCL = '15ns'
tRP = '15ns'
@@ -307,6 +316,9 @@ class LPDDR2_S4_1066_x32(DRAMCtrl):
# LPDDR2-S4 has 8 banks in all configurations
banks_per_rank = 8
+ # 533 MHz
+ tCK = '1.876ns'
+
# Fixed at 15 ns
tRCD = '15ns'
@@ -367,6 +379,9 @@ class WideIO_200_x128(DRAMCtrl):
# WideIO has 4 banks in all configurations
banks_per_rank = 4
+ # 200 MHz
+ tCK = '5ns'
+
# WIO-200
tRCD = '18ns'
tCL = '18ns'
@@ -421,6 +436,9 @@ class LPDDR3_1600_x32(DRAMCtrl):
# LPDDR3 has 8 banks in all configurations
banks_per_rank = 8
+ # 800 MHz
+ tCK = '1.25ns'
+
# Fixed at 15 ns
tRCD = '15ns'
diff --git a/src/mem/dram_ctrl.cc b/src/mem/dram_ctrl.cc
index 1e00dd606..dc47818e3 100644
--- a/src/mem/dram_ctrl.cc
+++ b/src/mem/dram_ctrl.cc
@@ -74,7 +74,7 @@ DRAMCtrl::DRAMCtrl(const DRAMCtrlParams* p) :
writeLowThreshold(writeBufferSize * p->write_low_thresh_perc / 100.0),
minWritesPerSwitch(p->min_writes_per_switch),
writesThisTime(0), readsThisTime(0),
- tWTR(p->tWTR), tRTW(p->tRTW), tBURST(p->tBURST),
+ tCK(p->tCK), tWTR(p->tWTR), tRTW(p->tRTW), tBURST(p->tBURST),
tRCD(p->tRCD), tCL(p->tCL), tRP(p->tRP), tRAS(p->tRAS), tWR(p->tWR),
tRTP(p->tRTP), tRFC(p->tRFC), tREFI(p->tREFI), tRRD(p->tRRD),
tXAW(p->tXAW), activationLimit(p->activation_limit),
diff --git a/src/mem/dram_ctrl.hh b/src/mem/dram_ctrl.hh
index 24f9729c5..0dbff7eaf 100644
--- a/src/mem/dram_ctrl.hh
+++ b/src/mem/dram_ctrl.hh
@@ -468,6 +468,7 @@ class DRAMCtrl : public AbstractMemory
* Basic memory timing parameters initialized based on parameter
* values.
*/
+ const Tick tCK;
const Tick tWTR;
const Tick tRTW;
const Tick tBURST;