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author | Wendy Elsasser <wendy.elsasser@arm.com> | 2015-09-22 13:17:53 -0500 |
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committer | Wendy Elsasser <wendy.elsasser@arm.com> | 2015-09-22 13:17:53 -0500 |
commit | 61c38524ceb9cf257feee73d60323da319145705 (patch) | |
tree | 2bad78df77b615fab6dae3b2d45bfddcf0ea897f /src | |
parent | 89750538648a11a8db9bd0704d000bb26367b87b (diff) | |
download | gem5-61c38524ceb9cf257feee73d60323da319145705.tar.xz |
mem: Add initial HBM configurations
Created the following HBM configurations:
1) HBM gen1 (x128/CH), 2Gb die, 4H stack, 1Gbps, 8 channels
2) HBM gen2 (x64/PC), 8Gb die, 4H stack, 1Gbps, 16 pseudo-channels
The configuration values are based on:
- The HBM gen1 public JEDEC spec
- Publically released data from MemCon presentations
- Timing extrapolated from existing LPDDR configurations
Will adjust once specs become available.
Diffstat (limited to 'src')
-rw-r--r-- | src/mem/DRAMCtrl.py | 126 |
1 files changed, 126 insertions, 0 deletions
diff --git a/src/mem/DRAMCtrl.py b/src/mem/DRAMCtrl.py index d02011526..171d99686 100644 --- a/src/mem/DRAMCtrl.py +++ b/src/mem/DRAMCtrl.py @@ -912,6 +912,132 @@ class GDDR5_4000_x64(DRAMCtrl): # Assume 2 cycles tRTW = '2ns' +# A single HBM x128 interface (one command and address bus), with +# default timings based on data publically released +# ("HBM: Memory Solution for High Performance Processors", MemCon, 2014), +# IDD measurement values, and by extrapolating data from other classes. +# Architecture values based on published HBM spec +# A 4H stack is defined, 2Gb per die for a total of 1GB of memory. +class HBM_1000_4H_x128(DRAMCtrl): + # HBM gen1 supports up to 8 128-bit physical channels + # Configuration defines a single channel, with the capacity + # set to (full_ stack_capacity / 8) based on 2Gb dies + # To use all 8 channels, set 'channels' parameter to 8 in + # system configuration + + # 128-bit interface legacy mode + device_bus_width = 128 + + # HBM supports BL4 and BL2 (legacy mode only) + burst_length = 4 + + # size of channel in bytes, 4H stack of 2Gb dies is 1GB per stack; + # with 8 channels, 128MB per channel + device_size = '128MB' + + device_rowbuffer_size = '2kB' + + # 1x128 configuration + devices_per_rank = 1 + + # HBM does not have a CS pin; set rank to 1 + ranks_per_channel = 1 + + # HBM has 8 or 16 banks depending on capacity + # 2Gb dies have 8 banks + banks_per_rank = 8 + + # depending on frequency, bank groups may be required + # will always have 4 bank groups when enabled + # current specifications do not define the minimum frequency for + # bank group architecture + # setting bank_groups_per_rank to 0 to disable until range is defined + bank_groups_per_rank = 0 + + # 500 MHz for 1Gbps DDR data rate + tCK = '2ns' + + # use values from IDD measurement in JEDEC spec + # use tRP value for tRCD and tCL similar to other classes + tRP = '15ns' + tRCD = '15ns' + tCL = '15ns' + tRAS = '33ns' + + # BL2 and BL4 supported, default to BL4 + # DDR @ 500 MHz means 4 * 2ns / 2 = 4ns + tBURST = '4ns' + + # value for 2Gb device from JEDEC spec + tRFC = '160ns' + + # value for 2Gb device from JEDEC spec + tREFI = '3.9us' + + # extrapolate the following from LPDDR configs, using ns values + # to minimize burst length, prefetch differences + tWR = '18ns' + tRTP = '7.5ns' + tWTR = '10ns' + + # start with 2 cycles turnaround, similar to other memory classes + # could be more with variations across the stack + tRTW = '4ns' + + # single rank device, set to 0 + tCS = '0ns' + + # from MemCon example, tRRD is 4ns with 2ns tCK + tRRD = '4ns' + + # from MemCon example, tFAW is 30ns with 2ns tCK + tXAW = '30ns' + activation_limit = 4 + + # 4tCK + tXP = '8ns' + + # start with tRFC + tXP -> 160ns + 8ns = 168ns + tXS = '168ns' + +# A single HBM x64 interface (one command and address bus), with +# default timings based on HBM gen1 and data publically released +# A 4H stack is defined, 8Gb per die for a total of 4GB of memory. +# Note: This defines a pseudo-channel with a unique controller +# instantiated per pseudo-channel +# Stay at same IO rate (1Gbps) to maintain timing relationship with +# HBM gen1 class (HBM_1000_4H_x128) where possible +class HBM_1000_4H_x64(HBM_1000_4H_x128): + # For HBM gen2 with pseudo-channel mode, configure 2X channels. + # Configuration defines a single pseudo channel, with the capacity + # set to (full_ stack_capacity / 16) based on 8Gb dies + # To use all 16 pseudo channels, set 'channels' parameter to 16 in + # system configuration + + # 64-bit pseudo-channle interface + device_bus_width = 64 + + # HBM pseudo-channel only supports BL4 + burst_length = 4 + + # size of channel in bytes, 4H stack of 8Gb dies is 4GB per stack; + # with 16 channels, 256MB per channel + device_size = '256MB' + + # page size is halved with pseudo-channel; maintaining the same same number + # of rows per pseudo-channel with 2X banks across 2 channels + device_rowbuffer_size = '1kB' + + # HBM has 8 or 16 banks depending on capacity + # Starting with 4Gb dies, 16 banks are defined + banks_per_rank = 16 + + # reset tRFC for larger, 8Gb device + # use HBM1 4Gb value as a starting point + tRFC = '260ns' + + # start with tRFC + tXP -> 160ns + 8ns = 168ns + tXS = '268ns' # Default different rank bus delay to 2 CK, @1000 MHz = 2 ns tCS = '2ns' tREFI = '3.9us' |