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-# Copyright (c) 2012-2013 ARM Limited
-# All rights reserved.
-#
-# The license below extends only to copyright in the software and shall
-# not be construed as granting a license to any other intellectual
-# property including but not limited to intellectual property relating
-# to a hardware implementation of the functionality of the software
-# licensed hereunder. You may use the software subject to the license
-# terms below provided that you ensure that this notice is replicated
-# unmodified and in its entirety in all distributions of the software,
-# modified or unmodified, in source code or in binary form.
-#
-# Copyright (c) 2013 Amin Farmahini-Farahani
-# All rights reserved.
-#
-# Redistribution and use in source and binary forms, with or without
-# modification, are permitted provided that the following conditions are
-# met: redistributions of source code must retain the above copyright
-# notice, this list of conditions and the following disclaimer;
-# redistributions in binary form must reproduce the above copyright
-# notice, this list of conditions and the following disclaimer in the
-# documentation and/or other materials provided with the distribution;
-# neither the name of the copyright holders nor the names of its
-# contributors may be used to endorse or promote products derived from
-# this software without specific prior written permission.
-#
-# THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS
-# "AS IS" AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT
-# LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR
-# A PARTICULAR PURPOSE ARE DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT
-# OWNER OR CONTRIBUTORS BE LIABLE FOR ANY DIRECT, INDIRECT, INCIDENTAL,
-# SPECIAL, EXEMPLARY, OR CONSEQUENTIAL DAMAGES (INCLUDING, BUT NOT
-# LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR SERVICES; LOSS OF USE,
-# DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER CAUSED AND ON ANY
-# THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, OR TORT
-# (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE
-# OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
-#
-# Authors: Andreas Hansson
-# Ani Udipi
-
-from m5.params import *
-from AbstractMemory import *
-
-# Enum for memory scheduling algorithms, currently First-Come
-# First-Served and a First-Row Hit then First-Come First-Served
-class MemSched(Enum): vals = ['fcfs', 'frfcfs']
-
-# Enum for the address mapping. With Ch, Ra, Ba, Ro and Co denoting
-# channel, rank, bank, row and column, respectively, and going from
-# MSB to LSB. Available are RoRaBaChCo and RoRaBaCoCh, that are
-# suitable for an open-page policy, optimising for sequential accesses
-# hitting in the open row. For a closed-page policy, RoCoRaBaCh
-# maximises parallelism.
-class AddrMap(Enum): vals = ['RoRaBaChCo', 'RoRaBaCoCh', 'RoCoRaBaCh']
-
-# Enum for the page policy, either open, open_adaptive, close, or
-# close_adaptive.
-class PageManage(Enum): vals = ['open', 'open_adaptive', 'close',
- 'close_adaptive']
-
-# SimpleDRAM is a single-channel single-ported DRAM controller model
-# that aims to model the most important system-level performance
-# effects of a DRAM without getting into too much detail of the DRAM
-# itself.
-class SimpleDRAM(AbstractMemory):
- type = 'SimpleDRAM'
- cxx_header = "mem/simple_dram.hh"
-
- # single-ported on the system interface side, instantiate with a
- # bus in front of the controller for multiple ports
- port = SlavePort("Slave port")
-
- # the basic configuration of the controller architecture
- write_buffer_size = Param.Unsigned(64, "Number of write queue entries")
- read_buffer_size = Param.Unsigned(32, "Number of read queue entries")
-
- # threshold in percent for when to forcefully trigger writes and
- # start emptying the write buffer
- write_high_thresh_perc = Param.Percent(85, "Threshold to force writes")
-
- # threshold in percentage for when to start writes if the read
- # queue is empty
- write_low_thresh_perc = Param.Percent(50, "Threshold to start writes")
-
- # minimum write bursts to schedule before switching back to reads
- min_writes_per_switch = Param.Unsigned(16, "Minimum write bursts before "
- "switching to reads")
-
- # scheduler, address map and page policy
- mem_sched_policy = Param.MemSched('frfcfs', "Memory scheduling policy")
- addr_mapping = Param.AddrMap('RoRaBaChCo', "Address mapping policy")
- page_policy = Param.PageManage('open_adaptive', "Page management policy")
-
- # enforce a limit on the number of accesses per row
- max_accesses_per_row = Param.Unsigned(16, "Max accesses per row before "
- "closing");
-
- # pipeline latency of the controller and PHY, split into a
- # frontend part and a backend part, with reads and writes serviced
- # by the queues only seeing the frontend contribution, and reads
- # serviced by the memory seeing the sum of the two
- static_frontend_latency = Param.Latency("10ns", "Static frontend latency")
- static_backend_latency = Param.Latency("10ns", "Static backend latency")
-
- # the physical organisation of the DRAM
- device_bus_width = Param.Unsigned("data bus width in bits for each DRAM "\
- "device/chip")
- burst_length = Param.Unsigned("Burst lenght (BL) in beats")
- device_rowbuffer_size = Param.MemorySize("Page (row buffer) size per "\
- "device/chip")
- devices_per_rank = Param.Unsigned("Number of devices/chips per rank")
- ranks_per_channel = Param.Unsigned("Number of ranks per channel")
- banks_per_rank = Param.Unsigned("Number of banks per rank")
- # only used for the address mapping as the controller by
- # construction is a single channel and multiple controllers have
- # to be instantiated for a multi-channel configuration
- channels = Param.Unsigned(1, "Number of channels")
-
- # timing behaviour and constraints - all in nanoseconds
-
- # the amount of time in nanoseconds from issuing an activate command
- # to the data being available in the row buffer for a read/write
- tRCD = Param.Latency("RAS to CAS delay")
-
- # the time from issuing a read/write command to seeing the actual data
- tCL = Param.Latency("CAS latency")
-
- # minimum time between a precharge and subsequent activate
- tRP = Param.Latency("Row precharge time")
-
- # minimum time between an activate and a precharge to the same row
- tRAS = Param.Latency("ACT to PRE delay")
-
- # time to complete a burst transfer, typically the burst length
- # divided by two due to the DDR bus, but by making it a parameter
- # it is easier to also evaluate SDR memories like WideIO.
- # This parameter has to account for burst length.
- # Read/Write requests with data size larger than one full burst are broken
- # down into multiple requests in the SimpleDRAM controller
- tBURST = Param.Latency("Burst duration (for DDR burst length / 2 cycles)")
-
- # time taken to complete one refresh cycle (N rows in all banks)
- tRFC = Param.Latency("Refresh cycle time")
-
- # refresh command interval, how often a "ref" command needs
- # to be sent. It is 7.8 us for a 64ms refresh requirement
- tREFI = Param.Latency("Refresh command interval")
-
- # write-to-read turn around penalty, assumed same as read-to-write
- tWTR = Param.Latency("Write to read switching time")
-
- # minimum row activate to row activate delay time
- tRRD = Param.Latency("ACT to ACT delay")
-
- # time window in which a maximum number of activates are allowed
- # to take place, set to 0 to disable
- tXAW = Param.Latency("X activation window")
- activation_limit = Param.Unsigned("Max number of activates in window")
-
- # Currently rolled into other params
- ######################################################################
-
- # tRC - assumed to be tRAS + tRP
-
-# A single DDR3 x64 interface (one command and address bus), with
-# default timings based on DDR3-1600 4 Gbit parts in an 8x8
-# configuration, which would amount to 4 Gbyte of memory.
-class DDR3_1600_x64(SimpleDRAM):
- # 8x8 configuration, 8 devices each with an 8-bit interface
- device_bus_width = 8
-
- # DDR3 is a BL8 device
- burst_length = 8
-
- # Each device has a page (row buffer) size of 1KB
- # (this depends on the memory density)
- device_rowbuffer_size = '1kB'
-
- # 8x8 configuration, so 8 devices
- devices_per_rank = 8
-
- # Use two ranks
- ranks_per_channel = 2
-
- # DDR3 has 8 banks in all configurations
- banks_per_rank = 8
-
- # DDR3-1600 11-11-11-28
- tRCD = '13.75ns'
- tCL = '13.75ns'
- tRP = '13.75ns'
- tRAS = '35ns'
-
- # 8 beats across an x64 interface translates to 4 clocks @ 800 MHz.
- # Note this is a BL8 DDR device.
- tBURST = '5ns'
-
- # DDR3, 4 Gbit has a tRFC of 240 CK and tCK = 1.25 ns
- tRFC = '300ns'
-
- # DDR3, <=85C, half for >85C
- tREFI = '7.8us'
-
- # Greater of 4 CK or 7.5 ns, 4 CK @ 800 MHz = 5 ns
- tWTR = '7.5ns'
-
- # Assume 5 CK for activate to activate for different banks
- tRRD = '6.25ns'
-
- # With a 2kbyte page size, DDR3-1600 lands around 40 ns
- tXAW = '40ns'
- activation_limit = 4
-
-
-# A single DDR3 x64 interface (one command and address bus), with
-# default timings based on DDR3-1333 4 Gbit parts in an 8x8
-# configuration, which would amount to 4 GByte of memory. This
-# configuration is primarily for comparing with DRAMSim2, and all the
-# parameters except ranks_per_channel are based on the DRAMSim2 config
-# file DDR3_micron_32M_8B_x8_sg15.ini. Note that ranks_per_channel has
-# to be manually set, depending on size of the memory to be
-# simulated. By default DRAMSim2 has 2048MB of memory with a single
-# rank. Therefore for 4 GByte memory, set ranks_per_channel = 2
-class DDR3_1333_x64_DRAMSim2(SimpleDRAM):
- # 8x8 configuration, 8 devices each with an 8-bit interface
- device_bus_width = 8
-
- # DDR3 is a BL8 device
- burst_length = 8
-
- # Each device has a page (row buffer) size of 1KB
- # (this depends on the memory density)
- device_rowbuffer_size = '1kB'
-
- # 8x8 configuration, so 8 devices
- devices_per_rank = 8
-
- # Use two ranks
- ranks_per_channel = 2
-
- # DDR3 has 8 banks in all configurations
- banks_per_rank = 8
-
- tRCD = '15ns'
- tCL = '15ns'
- tRP = '15ns'
- tRAS = '36ns'
-
- # 8 beats across an x64 interface translates to 4 clocks @ 666.66 MHz.
- # Note this is a BL8 DDR device.
- tBURST = '6ns'
-
- tRFC = '160ns'
-
- # DDR3, <=85C, half for >85C
- tREFI = '7.8us'
-
- # Greater of 4 CK or 7.5 ns, 4 CK @ 666.66 MHz = 6 ns
- tWTR = '7.5ns'
-
- tRRD = '6.0ns'
-
- tXAW = '30ns'
- activation_limit = 4
-
-
-# A single LPDDR2-S4 x32 interface (one command/address bus), with
-# default timings based on a LPDDR2-1066 4 Gbit part in a 1x32
-# configuration.
-class LPDDR2_S4_1066_x32(SimpleDRAM):
- # 1x32 configuration, 1 device with a 32-bit interface
- device_bus_width = 32
-
- # LPDDR2_S4 is a BL4 and BL8 device
- burst_length = 8
-
- # Each device has a page (row buffer) size of 1KB
- # (this depends on the memory density)
- device_rowbuffer_size = '1kB'
-
- # 1x32 configuration, so 1 device
- devices_per_rank = 1
-
- # Use a single rank
- ranks_per_channel = 1
-
- # LPDDR2-S4 has 8 banks in all configurations
- banks_per_rank = 8
-
- # Fixed at 15 ns
- tRCD = '15ns'
-
- # 8 CK read latency, 4 CK write latency @ 533 MHz, 1.876 ns cycle time
- tCL = '15ns'
-
- # Pre-charge one bank 15 ns (all banks 18 ns)
- tRP = '15ns'
-
- tRAS = '42ns'
-
- # 8 beats across an x32 DDR interface translates to 4 clocks @ 533 MHz.
- # Note this is a BL8 DDR device.
- # Requests larger than 32 bytes are broken down into multiple requests
- # in the SimpleDRAM controller
- tBURST = '7.5ns'
-
- # LPDDR2-S4, 4 Gbit
- tRFC = '130ns'
- tREFI = '3.9us'
-
- # Irrespective of speed grade, tWTR is 7.5 ns
- tWTR = '7.5ns'
-
- # Activate to activate irrespective of density and speed grade
- tRRD = '10.0ns'
-
- # Irrespective of density, tFAW is 50 ns
- tXAW = '50ns'
- activation_limit = 4
-
-# A single WideIO x128 interface (one command and address bus), with
-# default timings based on an estimated WIO-200 8 Gbit part.
-class WideIO_200_x128(SimpleDRAM):
- # 1x128 configuration, 1 device with a 128-bit interface
- device_bus_width = 128
-
- # This is a BL4 device
- burst_length = 4
-
- # Each device has a page (row buffer) size of 4KB
- # (this depends on the memory density)
- device_rowbuffer_size = '4kB'
-
- # 1x128 configuration, so 1 device
- devices_per_rank = 1
-
- # Use one rank for a one-high die stack
- ranks_per_channel = 1
-
- # WideIO has 4 banks in all configurations
- banks_per_rank = 4
-
- # WIO-200
- tRCD = '18ns'
- tCL = '18ns'
- tRP = '18ns'
- tRAS = '42ns'
-
- # 4 beats across an x128 SDR interface translates to 4 clocks @ 200 MHz.
- # Note this is a BL4 SDR device.
- tBURST = '20ns'
-
- # WIO 8 Gb
- tRFC = '210ns'
-
- # WIO 8 Gb, <=85C, half for >85C
- tREFI = '3.9us'
-
- # Greater of 2 CK or 15 ns, 2 CK @ 200 MHz = 10 ns
- tWTR = '15ns'
-
- # Activate to activate irrespective of density and speed grade
- tRRD = '10.0ns'
-
- # Two instead of four activation window
- tXAW = '50ns'
- activation_limit = 2
-
-# A single LPDDR3 x32 interface (one command/address bus), with
-# default timings based on a LPDDR3-1600 4 Gbit part in a 1x32
-# configuration
-class LPDDR3_1600_x32(SimpleDRAM):
- # 1x32 configuration, 1 device with a 32-bit interface
- device_bus_width = 32
-
- # LPDDR3 is a BL8 device
- burst_length = 8
-
- # Each device has a page (row buffer) size of 4KB
- device_rowbuffer_size = '4kB'
-
- # 1x32 configuration, so 1 device
- devices_per_rank = 1
-
- # Use a single rank
- ranks_per_channel = 1
-
- # LPDDR3 has 8 banks in all configurations
- banks_per_rank = 8
-
- # Fixed at 15 ns
- tRCD = '15ns'
-
- # 12 CK read latency, 6 CK write latency @ 800 MHz, 1.25 ns cycle time
- tCL = '15ns'
-
- tRAS = '42ns'
-
- # Pre-charge one bank 15 ns (all banks 18 ns)
- tRP = '15ns'
-
- # 8 beats across a x32 DDR interface translates to 4 clocks @ 800 MHz.
- # Note this is a BL8 DDR device.
- # Requests larger than 32 bytes are broken down into multiple requests
- # in the SimpleDRAM controller
- tBURST = '5ns'
-
- # LPDDR3, 4 Gb
- tRFC = '130ns'
- tREFI = '3.9us'
-
- # Irrespective of speed grade, tWTR is 7.5 ns
- tWTR = '7.5ns'
-
- # Activate to activate irrespective of density and speed grade
- tRRD = '10.0ns'
-
- # Irrespective of size, tFAW is 50 ns
- tXAW = '50ns'
- activation_limit = 4