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-rw-r--r--src/mem/DRAMCtrl.py85
-rw-r--r--src/mem/dram_ctrl.cc6
-rw-r--r--src/mem/drampower.cc5
3 files changed, 93 insertions, 3 deletions
diff --git a/src/mem/DRAMCtrl.py b/src/mem/DRAMCtrl.py
index 74fb7c7be..4c500960a 100644
--- a/src/mem/DRAMCtrl.py
+++ b/src/mem/DRAMCtrl.py
@@ -736,3 +736,88 @@ class LPDDR3_1600_x32(DRAMCtrl):
IDD52 = '150mA'
VDD = '1.8V'
VDD2 = '1.2V'
+
+# A single GDDR5 x64 interface, with
+# default timings based on a GDDR5-4000 1 Gbit part (SK Hynix
+# H5GQ1H24AFR) in a 2x32 configuration.
+class GDDR5_4000_x64(DRAMCtrl):
+ # size of device
+ device_size = '128MB'
+
+ # 2x32 configuration, 1 device with a 32-bit interface
+ device_bus_width = 32
+
+ # GDDR5 is a BL8 device
+ burst_length = 8
+
+ # Each device has a page (row buffer) size of 2Kbits (256Bytes)
+ device_rowbuffer_size = '256B'
+
+ # 2x32 configuration, so 2 devices
+ devices_per_rank = 2
+
+ # assume single rank
+ ranks_per_channel = 1
+
+ # GDDR5 has 4 bank groups
+ bank_groups_per_rank = 4
+
+ # GDDR5 has 16 banks with 4 bank groups
+ banks_per_rank = 16
+
+ # 1000 MHz
+ tCK = '1ns'
+
+ # 8 beats across an x64 interface translates to 2 clocks @ 1000 MHz
+ # Data bus runs @2000 Mhz => DDR ( data runs at 4000 MHz )
+ # 8 beats at 4000 MHz = 2 beats at 1000 MHz
+ # tBURST is equivalent to the CAS-to-CAS delay (tCCD)
+ # With bank group architectures, tBURST represents the CAS-to-CAS
+ # delay for bursts to different bank groups (tCCD_S)
+ tBURST = '2ns'
+
+ # @1000MHz data rate, tCCD_L is 3 CK
+ # CAS-to-CAS delay for bursts to the same bank group
+ # tBURST is equivalent to tCCD_S; no explicit parameter required
+ # for CAS-to-CAS delay for bursts to different bank groups
+ tCCD_L = '3ns';
+
+ tRCD = '12ns'
+
+ # tCL is not directly found in datasheet and assumed equal tRCD
+ tCL = '12ns'
+
+ tRP = '12ns'
+ tRAS = '28ns'
+
+ # RRD_S (different bank group)
+ # RRD_S is 5.5 ns in datasheet.
+ # rounded to the next multiple of tCK
+ tRRD = '6ns'
+
+ # RRD_L (same bank group)
+ # RRD_L is 5.5 ns in datasheet.
+ # rounded to the next multiple of tCK
+ tRRD_L = '6ns'
+
+ tXAW = '23ns'
+
+ # tXAW < 4 x tRRD.
+ # Therefore, activation limit is set to 0
+ activation_limit = 0
+
+ tRFC = '65ns'
+ tWR = '12ns'
+
+ # Here using the average of WTR_S and WTR_L
+ tWTR = '5ns'
+
+ # Read-to-Precharge 2 CK
+ tRTP = '2ns'
+
+ # Assume 2 cycles
+ tRTW = '2ns'
+
+ # Default different rank bus delay to 2 CK, @1000 MHz = 2 ns
+ tCS = '2ns'
+ tREFI = '3.9us'
diff --git a/src/mem/dram_ctrl.cc b/src/mem/dram_ctrl.cc
index 1beebdd01..8378debf1 100644
--- a/src/mem/dram_ctrl.cc
+++ b/src/mem/dram_ctrl.cc
@@ -115,6 +115,9 @@ DRAMCtrl::DRAMCtrl(const DRAMCtrlParams* p) :
for (int b = 0; b < banksPerRank; b++) {
banks[r][b].rank = r;
banks[r][b].bank = b;
+ // GDDR addressing of banks to BG is linear.
+ // Here we assume that all DRAM generations address bank groups as
+ // follows:
if (bankGroupArch) {
// Simply assign lower bits to bank group in order to
// rotate across bank groups as banks are incremented
@@ -224,7 +227,8 @@ DRAMCtrl::DRAMCtrl(const DRAMCtrlParams* p) :
tCCD_L, tBURST, bankGroupsPerRank);
}
// tRRD_L is greater than minimal, same bank group ACT-to-ACT delay
- if (tRRD_L <= tRRD) {
+ // some datasheets might specify it equal to tRRD
+ if (tRRD_L < tRRD) {
fatal("tRRD_L (%d) should be larger than tRRD (%d) when "
"bank groups per rank (%d) is greater than 1\n",
tRRD_L, tRRD, bankGroupsPerRank);
diff --git a/src/mem/drampower.cc b/src/mem/drampower.cc
index a7339656a..c15379d92 100644
--- a/src/mem/drampower.cc
+++ b/src/mem/drampower.cc
@@ -155,7 +155,8 @@ DRAMPower::getDataRate(const DRAMCtrlParams* p)
{
uint32_t burst_cycles = divCeil(p->tBURST, p->tCK);
uint8_t data_rate = p->burst_length / burst_cycles;
- if (data_rate != 1 && data_rate != 2)
- fatal("Got unexpected data rate %d, should be 1 or 2\n");
+ // 4 for GDDR5
+ if (data_rate != 1 && data_rate != 2 && data_rate != 4)
+ fatal("Got unexpected data rate %d, should be 1 or 2 or 4\n");
return data_rate;
}