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-rw-r--r--src/mem/DRAMCtrl.py209
1 files changed, 192 insertions, 17 deletions
diff --git a/src/mem/DRAMCtrl.py b/src/mem/DRAMCtrl.py
index 3b0696bd8..f5b405d09 100644
--- a/src/mem/DRAMCtrl.py
+++ b/src/mem/DRAMCtrl.py
@@ -122,6 +122,15 @@ class DRAMCtrl(AbstractMemory):
# to be instantiated for a multi-channel configuration
channels = Param.Unsigned(1, "Number of channels")
+ # For power modelling we need to know if the DRAM has a DLL or not
+ dll = Param.Bool(True, "DRAM has DLL or not")
+
+ # DRAMPower provides in addition to the core power, the possibility to
+ # include RD/WR termination and IO power. This calculation assumes some
+ # default values. The integration of DRAMPower with gem5 does not include
+ # IO and RD/WR termination power by default. This might be added as an
+ # additional feature in the future.
+
# timing behaviour and constraints - all in nanoseconds
# the base clock period of the DRAM
@@ -193,14 +202,108 @@ class DRAMCtrl(AbstractMemory):
tXAW = Param.Latency("X activation window")
activation_limit = Param.Unsigned("Max number of activates in window")
+ # time to exit power-down mode
+ # Exit power-down to next valid command delay
+ tXP = Param.Latency("0ns", "Power-up Delay")
+
+ # Exit Powerdown to commands requiring a locked DLL
+ tXPDLL = Param.Latency("0ns", "Power-up Delay with locked DLL")
+
+ # time to exit self-refresh mode
+ tXS = Param.Latency("0ns", "Self-refresh exit latency")
+
+ # time to exit self-refresh mode with locked DLL
+ tXSDLL = Param.Latency("0ns", "Self-refresh exit latency DLL")
+
# Currently rolled into other params
######################################################################
# tRC - assumed to be tRAS + tRP
+ # Power Behaviour and Constraints
+ # DRAMs like LPDDR and WideIO have 2 external voltage domains. These are
+ # defined as VDD and VDD2. Each current is defined for each voltage domain
+ # separately. For example, current IDD0 is active-precharge current for
+ # voltage domain VDD and current IDD02 is active-precharge current for
+ # voltage domain VDD2.
+ # By default all currents are set to 0mA. Users who are only interested in
+ # the performance of DRAMs can leave them at 0.
+
+ # Operating 1 Bank Active-Precharge current
+ IDD0 = Param.Current("0mA", "Active precharge current")
+
+ # Operating 1 Bank Active-Precharge current multiple voltage Range
+ IDD02 = Param.Current("0mA", "Active precharge current VDD2")
+
+ # Precharge Power-down Current: Slow exit
+ IDD2P0 = Param.Current("0mA", "Precharge Powerdown slow")
+
+ # Precharge Power-down Current: Slow exit multiple voltage Range
+ IDD2P02 = Param.Current("0mA", "Precharge Powerdown slow VDD2")
+
+ # Precharge Power-down Current: Fast exit
+ IDD2P1 = Param.Current("0mA", "Precharge Powerdown fast")
+
+ # Precharge Power-down Current: Fast exit multiple voltage Range
+ IDD2P12 = Param.Current("0mA", "Precharge Powerdown fast VDD2")
+
+ # Precharge Standby current
+ IDD2N = Param.Current("0mA", "Precharge Standby current")
+
+ # Precharge Standby current multiple voltage range
+ IDD2N2 = Param.Current("0mA", "Precharge Standby current VDD2")
+
+ # Active Power-down current: slow exit
+ IDD3P0 = Param.Current("0mA", "Active Powerdown slow")
+
+ # Active Power-down current: slow exit multiple voltage range
+ IDD3P02 = Param.Current("0mA", "Active Powerdown slow VDD2")
+
+ # Active Power-down current : fast exit
+ IDD3P1 = Param.Current("0mA", "Active Powerdown fast")
+
+ # Active Power-down current : fast exit multiple voltage range
+ IDD3P12 = Param.Current("0mA", "Active Powerdown fast VDD2")
+
+ # Active Standby current
+ IDD3N = Param.Current("0mA", "Active Standby current")
+
+ # Active Standby current multiple voltage range
+ IDD3N2 = Param.Current("0mA", "Active Standby current VDD2")
+
+ # Burst Read Operating Current
+ IDD4R = Param.Current("0mA", "READ current")
+
+ # Burst Read Operating Current multiple voltage range
+ IDD4R2 = Param.Current("0mA", "READ current VDD2")
+
+ # Burst Write Operating Current
+ IDD4W = Param.Current("0mA", "WRITE current")
+
+ # Burst Write Operating Current multiple voltage range
+ IDD4W2 = Param.Current("0mA", "WRITE current VDD2")
+
+ # Refresh Current
+ IDD5 = Param.Current("0mA", "Refresh current")
+
+ # Refresh Current multiple voltage range
+ IDD52 = Param.Current("0mA", "Refresh current VDD2")
+
+ # Self-Refresh Current
+ IDD6 = Param.Current("0mA", "Self-refresh Current")
+
+ # Self-Refresh Current multiple voltage range
+ IDD62 = Param.Current("0mA", "Self-refresh Current VDD2")
+
+ # Main voltage range of the DRAM
+ VDD = Param.Voltage("0V", "Main Voltage Range")
+
+ # Second voltage range defined by some DRAMs
+ VDD2 = Param.Voltage("0V", "2nd Voltage Range")
+
# A single DDR3-1600 x64 channel (one command and address bus), with
# timings based on a DDR3-1600 4 Gbit datasheet (Micron MT41J512M8) in
-# an 8x8 configuration, amounting to 4 Gbyte of memory.
+# an 8x8 configuration.
class DDR3_1600_x64(DRAMCtrl):
# 8x8 configuration, 8 devices each with an 8-bit interface
device_bus_width = 8
@@ -253,6 +356,15 @@ class DDR3_1600_x64(DRAMCtrl):
# <=85C, half for >85C
tREFI = '7.8us'
+ # Current values from datasheet
+ IDD0 = '75mA'
+ IDD2N = '50mA'
+ IDD3N = '57mA'
+ IDD4W = '165mA'
+ IDD4R = '187mA'
+ IDD5 = '220mA'
+ VDD = '1.5V'
+
# A single DDR3-2133 x64 channel refining a selected subset of the
# options for the DDR-1600 configuration, based on the same DDR3-1600
# 4 Gbit datasheet (Micron MT41J512M8). Most parameters are kept
@@ -272,9 +384,18 @@ class DDR3_2133_x64(DDR3_1600_x64):
tRRD = '5ns'
tXAW = '25ns'
+ # Current values from datasheet
+ IDD0 = '70mA'
+ IDD2N = '37mA'
+ IDD3N = '44mA'
+ IDD4W = '157mA'
+ IDD4R = '191mA'
+ IDD5 = '250mA'
+ VDD = '1.5V'
+
# A single DDR4-2400 x64 channel (one command and address bus), with
-# timings based on a DDR4-2400 4 Gbit datasheet (Samsung K4A4G085WD)
-# in an 8x8 configuration, amounting to 4 Gbyte of memory.
+# timings based on a DDR4-2400 4 Gbit datasheet (Micron MT40A512M8)
+# in an 8x8 configuration.
class DDR4_2400_x64(DRAMCtrl):
# 8x8 configuration, 8 devices each with an 8-bit interface
device_bus_width = 8
@@ -288,8 +409,8 @@ class DDR4_2400_x64(DRAMCtrl):
# 8x8 configuration, so 8 devices
devices_per_rank = 8
- # Use a single rank
- ranks_per_channel = 1
+ # Match our DDR3 configurations which is dual rank
+ ranks_per_channel = 2
# DDR4 has 2 (x16) or 4 (x4 and x8) bank groups
# Set to 4 for x4, x8 case
@@ -329,7 +450,7 @@ class DDR4_2400_x64(DRAMCtrl):
tXAW = '21ns'
activation_limit = 4
- tRFC = '260ns'
+ tRFC = '350ns'
tWR = '15ns'
@@ -348,10 +469,25 @@ class DDR4_2400_x64(DRAMCtrl):
# <=85C, half for >85C
tREFI = '7.8us'
+ # Current values from datasheet
+ IDD0 = '64mA'
+ IDD02 = '4mA'
+ IDD2N = '50mA'
+ IDD3N = '67mA'
+ IDD3N2 = '3mA'
+ IDD4W = '180mA'
+ IDD4R = '160mA'
+ IDD5 = '192mA'
+ VDD = '1.2V'
+ VDD2 = '2.5V'
+
# A single LPDDR2-S4 x32 interface (one command/address bus), with
-# default timings based on a LPDDR2-1066 4 Gbit part in a 1x32
-# configuration.
+# default timings based on a LPDDR2-1066 4 Gbit part (Micron MT42L128M32D1)
+# in a 1x32 configuration.
class LPDDR2_S4_1066_x32(DRAMCtrl):
+ # No DLL in LPDDR2
+ dll = False
+
# 1x32 configuration, 1 device with a 32-bit interface
device_bus_width = 32
@@ -386,8 +522,7 @@ class LPDDR2_S4_1066_x32(DRAMCtrl):
tRAS = '42ns'
tWR = '15ns'
- # 6 CK read to precharge delay
- tRTP = '11.256ns'
+ tRTP = '7.5ns'
# 8 beats across an x32 DDR interface translates to 4 clocks @ 533 MHz.
# Note this is a BL8 DDR device.
@@ -415,9 +550,28 @@ class LPDDR2_S4_1066_x32(DRAMCtrl):
tXAW = '50ns'
activation_limit = 4
+ # Current values from datasheet
+ IDD0 = '15mA'
+ IDD02 = '70mA'
+ IDD2N = '2mA'
+ IDD2N2 = '30mA'
+ IDD3N = '2.5mA'
+ IDD3N2 = '30mA'
+ IDD4W = '10mA'
+ IDD4W2 = '190mA'
+ IDD4R = '3mA'
+ IDD4R2 = '220mA'
+ IDD5 = '40mA'
+ IDD52 = '150mA'
+ VDD = '1.8V'
+ VDD2 = '1.2V'
+
# A single WideIO x128 interface (one command and address bus), with
# default timings based on an estimated WIO-200 8 Gbit part.
class WideIO_200_x128(DRAMCtrl):
+ # No DLL for WideIO
+ dll = False
+
# 1x128 configuration, 1 device with a 128-bit interface
device_bus_width = 128
@@ -475,10 +629,15 @@ class WideIO_200_x128(DRAMCtrl):
tXAW = '50ns'
activation_limit = 2
+ # The WideIO specification does not provide current information
+
# A single LPDDR3 x32 interface (one command/address bus), with
-# default timings based on a LPDDR3-1600 4 Gbit part in a 1x32
-# configuration
+# default timings based on a LPDDR3-1600 4 Gbit part (Micron
+# EDF8132A1MC) in a 1x32 configuration.
class LPDDR3_1600_x32(DRAMCtrl):
+ # No DLL for LPDDR3
+ dll = False
+
# 1x32 configuration, 1 device with a 32-bit interface
device_bus_width = 32
@@ -491,7 +650,8 @@ class LPDDR3_1600_x32(DRAMCtrl):
# 1x32 configuration, so 1 device
devices_per_rank = 1
- # Use a single rank
+ # Technically the datasheet is a dual-rank package, but for
+ # comparison with the LPDDR2 config we stick to a single rank
ranks_per_channel = 1
# LPDDR3 has 8 banks in all configurations
@@ -500,8 +660,7 @@ class LPDDR3_1600_x32(DRAMCtrl):
# 800 MHz
tCK = '1.25ns'
- # Fixed at 15 ns
- tRCD = '15ns'
+ tRCD = '18ns'
# 12 CK read latency, 6 CK write latency @ 800 MHz, 1.25 ns cycle time
tCL = '15ns'
@@ -512,8 +671,8 @@ class LPDDR3_1600_x32(DRAMCtrl):
# Greater of 4 CK or 7.5 ns, 4 CK @ 800 MHz = 5 ns
tRTP = '7.5ns'
- # Pre-charge one bank 15 ns (all banks 18 ns)
- tRP = '15ns'
+ # Pre-charge one bank 18 ns (all banks 21 ns)
+ tRP = '18ns'
# 8 beats across a x32 DDR interface translates to 4 clocks @ 800 MHz.
# Note this is a BL8 DDR device.
@@ -540,3 +699,19 @@ class LPDDR3_1600_x32(DRAMCtrl):
# Irrespective of size, tFAW is 50 ns
tXAW = '50ns'
activation_limit = 4
+
+ # Current values from datasheet
+ IDD0 = '8mA'
+ IDD02 = '60mA'
+ IDD2N = '0.8mA'
+ IDD2N2 = '26mA'
+ IDD3N = '2mA'
+ IDD3N2 = '34mA'
+ IDD4W = '2mA'
+ IDD4W2 = '190mA'
+ IDD4R = '2mA'
+ IDD4R2 = '230mA'
+ IDD5 = '28mA'
+ IDD52 = '150mA'
+ VDD = '1.8V'
+ VDD2 = '1.2V'
generated by cgit v1.2.3 (git 2.25.1) at 2024-11-05 07:17:26 +0000