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Change-Id: I7af361e146909acc158590354ab22732d4b2f3d5
Signed-off-by: Wendy Elsasser <wendy.elsasser@arm.com>
Reviewed-by: Curtis Dunham <curtis.dunham@arm.com>
Reviewed-on: https://gem5-review.googlesource.com/8101
Maintainer: Jason Lowe-Power <jason@lowepower.com>
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Names of DRAM configurations were updated to reflect both
the channel and device data width.
Previous naming format was:
<DEVICE_TYPE>_<DATA_RATE>_<CHANNEL_WIDTH>
The following nomenclature is now used:
<DEVICE_TYPE>_<DATA_RATE>_<n>x<w>
where n = The number of devices per rank on the channel
x = Device width
Total channel width can be calculated by n*w
Example:
A 64-bit DDR4, 2400 channel consisting of 4-bit devices:
n = 16
w = 4
The resulting configuration name is:
DDR4_2400_16x4
Updated scripts to match new naming convention.
Added unique configurations for DDR4 for:
1) 16x4
2) 8x8
3) 4x16
Change-Id: Ibd7f763b7248835c624309143cb9fc29d56a69d1
Reviewed-by: Radhika Jagtap <radhika.jagtap@arm.com>
Reviewed-by: Curtis Dunham <curtis.dunham@arm.com>
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Change-Id: I763cffe0c69f5ebbbf6a6eb12bec5c13d5d0161d
Reviewed-by: Andreas Hansson <andreas.hansson@arm.com>
Reviewed-by: Radhika Jagtap <radhika.jagtap@arm.com>
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Change-Id: I8992ddc1664c3ed4b2d36d8a34e4ce8be113b9de
Reviewed-by: Radhika Jagtap <radhika.jagtap@arm.com>
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This patch performs two minor fixes to DRAMCtrl.py and xbar.hh in favor of the
HMC patch series.
Committed by: Nilay Vaish <nilay@cs.wisc.edu>
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Created the following HBM configurations:
1) HBM gen1 (x128/CH), 2Gb die, 4H stack, 1Gbps, 8 channels
2) HBM gen2 (x64/PC), 8Gb die, 4H stack, 1Gbps, 16 pseudo-channels
The configuration values are based on:
- The HBM gen1 public JEDEC spec
- Publically released data from MemCon presentations
- Timing extrapolated from existing LPDDR configurations
Will adjust once specs become available.
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This patch increases the default read/write buffer sizes for the DDR4
controller config to values that are more suitable for the high
bandwidth and high bank count.
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A single HMC-2500 x32 model based on:
[1] DRAMSpec: a high-level DRAM bank modelling tool developed at the University
of Kaiserslautern. This high level tool uses RC (resistance-capacitance) and CV
(capacitance-voltage) models to estimate the DRAM bank latency and power
numbers.
[2] A Logic-base Interconnect for Supporting Near Memory Computation in the
Hybrid Memory Cube (E. Azarkhish et. al) Assumed for the HMC model is a 30 nm
technology node. The modelled HMC consists of a 4 Gbit part with 4 layers
connected with TSVs. Each layer has 16 vaults and each vault consists of 2
banks per layer. In order to be able to use the same controller used for 2D
DRAM generations for HMC, the following analogy is done: Channel (DDR) => Vault
(HMC) device_size (DDR) => size of a single layer in a vault ranks per channel
(DDR) => number of layers banks per rank (DDR) => banks per layer devices per
rank (DDR) => devices per layer ( 1 for HMC). The parameters for which no
input is available are inherited from the DDR3 configuration.
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This patch changes the DRAM channel interleaving default behaviour to
be more representative. The default address mapping (RoRaBaCoCh) moves
the channel bits towards the least significant bits, and uses 128 byte
as the default channel interleaving granularity.
These defaults can be overridden if desired, but should serve as a
sensible starting point for most use-cases.
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This patch adds a first cut GDDR5 config to accommodate the users
combining gem5 and GPUSim. The config is based on a SK Hynix
datasheet, and the Nvidia GTX580 specification. Someone from the
GPUSim user-camp should tweak the default page-policy and static
frontend and backend latencies.
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This patch adds the size of the DRAM device to the DRAM config. It
also compares the actual DRAM size (calculated using information from
the config) to the size defined in the system. If these two values do
not match gem5 will print a warning. In order to do correct DRAM
research the size of the memory defined in the system should match the
size of the DRAM in the config. The timing and current parameters
found in the DRAM configs are defined for a DRAM device with a
specific size and would differ for another device with a different
size.
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This patch adds missing timing and current parameters to the existing
DRAM configs. These missing timing and current parameters are required
by DRAMPower for the DRAM power calculations. The missing values are
datasheet values of the specified DRAMs, and the appropriate
references are added for the variuos configs.
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This patch prunes the DDR3 config that was initially created to match
the default config of DRAMSim2. The config is not complete as it is,
and to avoid having to maintain it, the easiest way forward is to
simply prune it. Going forward we are adding power number etc to the
other configurations.
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Added the following parameter to the DRAMCtrl class:
- bank_groups_per_rank
This defaults to 1. For the DDR4 case, the default is overridden to indicate
bank group architecture, with multiple bank groups per rank.
Added the following delays to the DRAMCtrl class:
- tCCD_L : CAS-to-CAS, same bank group delay
- tRRD_L : RAS-to-RAS, same bank group delay
These parameters are only applied when bank group timing is enabled. Bank
group timing is currently enabled only for DDR4 memories.
For all other memories, these delays will default to '0 ns'
In the DRAM controller model, applied the bank group timing to the per bank
parameters actAllowedAt and colAllowedAt.
The actAllowedAt will be updated based on bank group when an ACT is issued.
The colAllowedAt will be updated based on bank group when a RD/WR burst is
issued.
At the moment no modifications are made to the scheduling.
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Add the following delay to the DRAM controller:
- tCS : Different rank bus turnaround delay
This will be applied for
1) read-to-read,
2) write-to-write,
3) write-to-read, and
4) read-to-write
command sequences, where the new command accesses a different rank
than the previous burst.
The delay defaults to 2*tCK for each defined memory class. Note that
this does not correspond to one particular timing constraint, but is a
way of modelling all the associated constraints.
The DRAM controller has some minor changes to prioritize commands to
the same rank. This prioritization will only occur when the command
stream is not switching from a read to write or vice versa (in the
case of switching we have a gap in any case).
To prioritize commands to the same rank, the model will determine if there are
any commands queued (same type) to the same rank as the previous command.
This check will ensure that the 'same rank' command will be able to execute
without adding bubbles to the command flow, e.g. any ACT delay requirements
can be done under the hoods, allowing the burst to issue seamlessly.
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This patch makes a more firm connection between the DDR3-1600
configuration and the corresponding datasheet, and also adds a
DDR3-2133 and a DDR4-2400 configuration. At the moment there is also
an ongoing effort to align the choice of datasheets to what is
available in DRAMPower.
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This patch extends the current timing parameters with the DRAM cycle
time. This is needed as the DRAMPower tool expects timestamps in DRAM
cycles. At the moment we could get away with doing this in a
post-processing step as the DRAMPower execution is separate from the
simulation run. However, in the long run we want the tool to be called
during the simulation, and then the cycle time is needed.
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This patch adds the tRTP timing constraint, governing the minimum time
between a read command and a precharge. Default values are provided
for the existing DRAM types.
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This patch adds the write recovery time to the DRAM timing
constraints, and changes the current tRASDoneAt to a more generic
preAllowedAt, capturing when a precharge is allowed to take place.
The part of the DRAM access code that accounts for the precharge and
activate constraints is updated accordingly.
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This patch changes the read/write event loop to use a single event
(nextReqEvent), along with a state variable, thus joining the two
control flows. This change makes it easier to follow the state
transitions, and control what happens when.
With the new loop we modify the overly conservative switching times
such that the write-to-read switch allows bank preparation to happen
in parallel with the bus turn around. Similarly, the read-to-write
switch uses the introduced tRTW constraint.
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This patch renames the not-so-simple SimpleDRAM to a more suitable
DRAMCtrl. The name change is intended to ensure that we do not send
the wrong message (although the "simple" in SimpleDRAM was originally
intended as in cleverly simple, or elegant).
As the DRAM controller modelling work is being presented at ISPASS'14
our hope is that a broader audience will use the model in the future.
--HG--
rename : src/mem/SimpleDRAM.py => src/mem/DRAMCtrl.py
rename : src/mem/simple_dram.cc => src/mem/dram_ctrl.cc
rename : src/mem/simple_dram.hh => src/mem/dram_ctrl.hh
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