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The drain() call currently passes around a DrainManager pointer, which
is now completely pointless since there is only ever one global
DrainManager in the system. It also contains vestiges from the time
when SimObjects had to keep track of their child objects that needed
draining.
This changeset moves all of the DrainState handling to the Drainable
base class and changes the drain() and drainResume() calls to reflect
this. Particularly, the drain() call has been updated to take no
parameters (the DrainManager argument isn't needed) and return a
DrainState instead of an unsigned integer (there is no point returning
anything other than 0 or 1 any more). Drainable objects should return
either DrainState::Draining (equivalent to returning 1 in the old
system) if they need more time to drain or DrainState::Drained
(equivalent to returning 0 in the old system) if they are already in a
consistent state. Returning DrainState::Running is considered an
error.
Drain done signalling is now done through the signalDrainDone() method
in the Drainable class instead of using the DrainManager directly. The
new call checks if the state of the object is DrainState::Draining
before notifying the drain manager. This means that it is safe to call
signalDrainDone() without first checking if the simulator has
requested draining. The intention here is to reduce the code needed to
implement draining in simple objects.
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This patch updates the command arbitration so that bank group timing
as well as rank-to-rank delays will be taken into account. The
resulting arbitration no longer selects commands (prepped or not) that
cannot issue seamlessly if there are commands that can issue
back-to-back, minimizing the effect of rank-to-rank (tCS) & same bank
group (tCCD_L) delays.
The arbitration selects a new command based on the following priority.
Within each priority band, the arbitration will use FCFS to select the
appropriate command:
1) Bank is prepped and burst can issue seamlessly, without a bubble
2) Bank is not prepped, but can prep and issue seamlessly, without a
bubble
3) Bank is prepped but burst cannot issue seamlessly. In this case, a
bubble will occur on the bus
Thus, to enable more parallelism in subsequent selections, an
unprepped packet is given higher priority if the bank prep can be
hidden. If the bank prep cannot be hidden, the selection logic will
choose a prepped packet that cannot issue seamlessly if one exist.
Otherwise, the default selection will choose the packet with the
minimum bank prep delay.
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This patch adds a simple lookup structure to avoid iterating over the
write queue to find read matches, and for the merging of write
bursts. Instead of relying on iteration we simply store a set of
currently-buffered write-burst addresses and compare against
these. For the reads we still perform the iteration if we have a
match. For the writes, we rely entirely on the set. Note that there
are corner-cases where sub-bursts would actually not be mergeable
without a read-modify-write. We ignore these cases and opt for speed.
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This patch fixes a long-standing isue with the port flow
control. Before this patch the retry mechanism was shared between all
different packet classes. As a result, a snoop response could get
stuck behind a request waiting for a retry, even if the send/recv
functions were split. This caused message-dependent deadlocks in
stress-test scenarios.
The patch splits the retry into one per packet (message) class. Thus,
sendTimingReq has a corresponding recvReqRetry, sendTimingResp has
recvRespRetry etc. Most of the changes to the code involve simply
clarifying what type of request a specific object was accepting.
The biggest change in functionality is in the cache downstream packet
queue, facing the memory. This queue was shared by requests and snoop
responses, and it is now split into two queues, each with their own
flow control, but the same physical MasterPort. These changes fixes
the previously seen deadlocks.
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This patch addresses an issue seen with the KVM CPU where the refresh
events scheduled by the DRAM controller forces the simulator to switch
out of the KVM mode, thus killing performance.
The current patch works around the fact that we currently have no
proper API to inform a SimObject of the mode switches. Instead we rely
on drainResume being called after any switch, and cache the previous
mode locally to be able to decide on appropriate actions.
The switcheroo regression require a minor stats bump as a result.
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This patch adds rank-wise refresh to the controller, as opposed to the
channel-wide refresh currently in place. In essence each rank can be
refreshed independently, and for this to be possible the controller
is extended with a state machine per rank.
Without this patch the data bus is always idle during a refresh, as
all the ranks are refreshing at the same time. With the rank-wise
refresh it is possible to use one rank while another one is
refreshing, and thus the data bus can be kept busy.
The patch introduces a Rank class to encapsulate the state per rank,
and also shifts all the relevant banks, activation tracking etc to the
rank. The arbitration is also updated to consider the state of the rank.
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This patch adds the size of the DRAM device to the DRAM config. It
also compares the actual DRAM size (calculated using information from
the config) to the size defined in the system. If these two values do
not match gem5 will print a warning. In order to do correct DRAM
research the size of the memory defined in the system should match the
size of the DRAM in the config. The timing and current parameters
found in the DRAM configs are defined for a DRAM device with a
specific size and would differ for another device with a different
size.
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This patch takes the final step in integrating DRAMPower and adds the
appropriate calls in the DRAM controller to provide the command trace
and extract the power and energy stats. The debug printouts are still
left in place, but will eventually be removed.
At the moment the DRAM power calculation is always on when using the
DRAM controller model. The run-time impact of this addition is around
1.5% when looking at the total host seconds of the regressions. We
deem this a sensible trade-off to avoid the complication of adding an
enable/disable mechanism.
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Added the following parameter to the DRAMCtrl class:
- bank_groups_per_rank
This defaults to 1. For the DDR4 case, the default is overridden to indicate
bank group architecture, with multiple bank groups per rank.
Added the following delays to the DRAMCtrl class:
- tCCD_L : CAS-to-CAS, same bank group delay
- tRRD_L : RAS-to-RAS, same bank group delay
These parameters are only applied when bank group timing is enabled. Bank
group timing is currently enabled only for DDR4 memories.
For all other memories, these delays will default to '0 ns'
In the DRAM controller model, applied the bank group timing to the per bank
parameters actAllowedAt and colAllowedAt.
The actAllowedAt will be updated based on bank group when an ACT is issued.
The colAllowedAt will be updated based on bank group when a RD/WR burst is
issued.
At the moment no modifications are made to the scheduling.
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Add the following delay to the DRAM controller:
- tCS : Different rank bus turnaround delay
This will be applied for
1) read-to-read,
2) write-to-write,
3) write-to-read, and
4) read-to-write
command sequences, where the new command accesses a different rank
than the previous burst.
The delay defaults to 2*tCK for each defined memory class. Note that
this does not correspond to one particular timing constraint, but is a
way of modelling all the associated constraints.
The DRAM controller has some minor changes to prioritize commands to
the same rank. This prioritization will only occur when the command
stream is not switching from a read to write or vice versa (in the
case of switching we have a gap in any case).
To prioritize commands to the same rank, the model will determine if there are
any commands queued (same type) to the same rank as the previous command.
This check will ensure that the 'same rank' command will be able to execute
without adding bubbles to the command flow, e.g. any ACT delay requirements
can be done under the hoods, allowing the burst to issue seamlessly.
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Update comments and add a reference for more information.
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This patch fixes a bug in the DRAM controller address decoding. In
cases where the DRAM burst size (e.g. 32 bytes in a rank with a single
LPDDR3 x32) was smaller than the channel interleaving size
(e.g. systems with a 64-byte cache line) one address bit effectively
got used as a channel bit when it should have been a low-order column
bit.
This patch adds a notion of "columns per stripe", and more clearly
deals with the low-order column bits and high-order column bits. The
patch also relaxes the granularity check such that it is possible to
use interleaving granularities other than the cache line size.
The patch also adds a missing M5_CLASS_VAR_USED to the tCK member as
it is only used in the debug build for now.
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This patch adds a DRAMPower flag to enable off-line DRAM power
analysis using the DRAMPower tool. A new DRAMPower flag is added
and a follow-on patch adds a Python script to post-process the output
and order it based on time stamps.
The long-term goal is to link DRAMPower as a library and provide the
commands through function calls to the model rather than first
printing and then parsing the commands. At the moment it is also up to
the user to ensure that the same DRAM configuration is used by the
gem5 controller model and DRAMPower.
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This patch adds the index of the bank and rank as a field so that we can
determine the identity of a given bank (reference or pointer) for the
power tracing. We also grab the opportunity of cleaning up the
arguments used for identifying the bank when activating.
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This patch extends the DRAM row bits to 32 to support larger density
memories. Additional checks are also added to ensure the row fits in
the 32 bits.
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This patch extends the current timing parameters with the DRAM cycle
time. This is needed as the DRAMPower tool expects timestamps in DRAM
cycles. At the moment we could get away with doing this in a
post-processing step as the DRAMPower execution is separate from the
simulation run. However, in the long run we want the tool to be called
during the simulation, and then the cycle time is needed.
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This patch simplifies the DRAM response scheduling based on the
assumption that they are always returned in order.
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This patch removes the redundant printing of DRAM params.
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This patch adds the tRTP timing constraint, governing the minimum time
between a read command and a precharge. Default values are provided
for the existing DRAM types.
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This patch merges the two control paths used to estimate the latency
and update the bank state. As a result of this merging the computation
is now in one place only, and should be easier to follow as it is all
done in absolute (rather than relative) time.
As part of this change, the scheduling is also refined to ensure that
we look at a sensible estimate of the bank ready time in choosing the
next request. The bank latency stat is removed as it ends up being
misleading when the DRAM access code gets evaluated ahead of time (due
to the eagerness of waking the model up for scheduling the next
request).
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This patch adds the write recovery time to the DRAM timing
constraints, and changes the current tRASDoneAt to a more generic
preAllowedAt, capturing when a precharge is allowed to take place.
The part of the DRAM access code that accounts for the precharge and
activate constraints is updated accordingly.
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This patch adds power states to the controller. These states and the
transitions can be used together with the Micron power model. As a
more elaborate use-case, the transitions can be used to drive the
DRAMPower tool.
At the moment, the power-down modes are not used, and this patch
simply serves to capture the idle, auto refresh and active modes. The
patch adds a third state machine that interacts with the refresh state
machine.
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This patch adds a state machine for the refresh scheduling to
ensure that no accesses are allowed while the refresh is in progress,
and that all banks are propely precharged.
As part of this change, the precharging of banks of broken out into a
method of its own, making is similar to how activations are dealt
with. The idle accounting is also updated to ensure that the refresh
duration is not added to the time that the DRAM is in the idle state
with all banks precharged.
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This patch changes the read/write event loop to use a single event
(nextReqEvent), along with a state variable, thus joining the two
control flows. This change makes it easier to follow the state
transitions, and control what happens when.
With the new loop we modify the overly conservative switching times
such that the write-to-read switch allows bank preparation to happen
in parallel with the bus turn around. Similarly, the read-to-write
switch uses the introduced tRTW constraint.
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This patch adds stats for tracking the number of reads/writes per bus
turn around, and also adds hysteresis to the write-to-read switching
to ensure that the queue does not oscilate around the low threshold.
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This patch renames the not-so-simple SimpleDRAM to a more suitable
DRAMCtrl. The name change is intended to ensure that we do not send
the wrong message (although the "simple" in SimpleDRAM was originally
intended as in cleverly simple, or elegant).
As the DRAM controller modelling work is being presented at ISPASS'14
our hope is that a broader audience will use the model in the future.
--HG--
rename : src/mem/SimpleDRAM.py => src/mem/DRAMCtrl.py
rename : src/mem/simple_dram.cc => src/mem/dram_ctrl.cc
rename : src/mem/simple_dram.hh => src/mem/dram_ctrl.hh
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