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path: root/src/mem/dram_ctrl.hh
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2014-10-20mem: Add DRAM device size and check against configOmar Naji
This patch adds the size of the DRAM device to the DRAM config. It also compares the actual DRAM size (calculated using information from the config) to the size defined in the system. If these two values do not match gem5 will print a warning. In order to do correct DRAM research the size of the memory defined in the system should match the size of the DRAM in the config. The timing and current parameters found in the DRAM configs are defined for a DRAM device with a specific size and would differ for another device with a different size.
2014-07-29mem: DRAMPower integration for on-line DRAM power statsOmar Naji
This patch takes the final step in integrating DRAMPower and adds the appropriate calls in the DRAM controller to provide the command trace and extract the power and energy stats. The debug printouts are still left in place, but will eventually be removed. At the moment the DRAM power calculation is always on when using the DRAM controller model. The run-time impact of this addition is around 1.5% when looking at the total host seconds of the regressions. We deem this a sensible trade-off to avoid the complication of adding an enable/disable mechanism.
2014-09-20mem: Add DDR4 bank group timingWendy Elsasser
Added the following parameter to the DRAMCtrl class: - bank_groups_per_rank This defaults to 1. For the DDR4 case, the default is overridden to indicate bank group architecture, with multiple bank groups per rank. Added the following delays to the DRAMCtrl class: - tCCD_L : CAS-to-CAS, same bank group delay - tRRD_L : RAS-to-RAS, same bank group delay These parameters are only applied when bank group timing is enabled. Bank group timing is currently enabled only for DDR4 memories. For all other memories, these delays will default to '0 ns' In the DRAM controller model, applied the bank group timing to the per bank parameters actAllowedAt and colAllowedAt. The actAllowedAt will be updated based on bank group when an ACT is issued. The colAllowedAt will be updated based on bank group when a RD/WR burst is issued. At the moment no modifications are made to the scheduling.
2014-09-20mem: Add memory rank-to-rank delayWendy Elsasser
Add the following delay to the DRAM controller: - tCS : Different rank bus turnaround delay This will be applied for 1) read-to-read, 2) write-to-write, 3) write-to-read, and 4) read-to-write command sequences, where the new command accesses a different rank than the previous burst. The delay defaults to 2*tCK for each defined memory class. Note that this does not correspond to one particular timing constraint, but is a way of modelling all the associated constraints. The DRAM controller has some minor changes to prioritize commands to the same rank. This prioritization will only occur when the command stream is not switching from a read to write or vice versa (in the case of switching we have a gap in any case). To prioritize commands to the same rank, the model will determine if there are any commands queued (same type) to the same rank as the previous command. This check will ensure that the 'same rank' command will be able to execute without adding bubbles to the command flow, e.g. any ACT delay requirements can be done under the hoods, allowing the burst to issue seamlessly.
2014-08-26mem: Update DRAM controller commentsAndreas Hansson
Update comments and add a reference for more information.
2014-08-26mem: Fix address interleaving bug in DRAM controllerAndreas Hansson
This patch fixes a bug in the DRAM controller address decoding. In cases where the DRAM burst size (e.g. 32 bytes in a rank with a single LPDDR3 x32) was smaller than the channel interleaving size (e.g. systems with a 64-byte cache line) one address bit effectively got used as a channel bit when it should have been a low-order column bit. This patch adds a notion of "columns per stripe", and more clearly deals with the low-order column bits and high-order column bits. The patch also relaxes the granularity check such that it is possible to use interleaving granularities other than the cache line size. The patch also adds a missing M5_CLASS_VAR_USED to the tCK member as it is only used in the debug build for now.
2014-06-30mem: DRAMPower trace outputAndreas Hansson
This patch adds a DRAMPower flag to enable off-line DRAM power analysis using the DRAMPower tool. A new DRAMPower flag is added and a follow-on patch adds a Python script to post-process the output and order it based on time stamps. The long-term goal is to link DRAMPower as a library and provide the commands through function calls to the model rather than first printing and then parsing the commands. At the moment it is also up to the user to ensure that the same DRAM configuration is used by the gem5 controller model and DRAMPower.
2014-06-30mem: Add bank and rank indices as fields to the DRAM bankAndreas Hansson
This patch adds the index of the bank and rank as a field so that we can determine the identity of a given bank (reference or pointer) for the power tracing. We also grab the opportunity of cleaning up the arguments used for identifying the bank when activating.
2014-06-30mem: Extend DRAM row bits from 16 to 32 for larger densitiesAndreas Hansson
This patch extends the DRAM row bits to 32 to support larger density memories. Additional checks are also added to ensure the row fits in the 32 bits.
2014-05-09mem: Add DRAM cycle timeAndreas Hansson
This patch extends the current timing parameters with the DRAM cycle time. This is needed as the DRAMPower tool expects timestamps in DRAM cycles. At the moment we could get away with doing this in a post-processing step as the DRAMPower execution is separate from the simulation run. However, in the long run we want the tool to be called during the simulation, and then the cycle time is needed.
2014-05-09mem: Simplify DRAM response schedulingAndreas Hansson
This patch simplifies the DRAM response scheduling based on the assumption that they are always returned in order.
2014-05-09mem: Remove printing of DRAM paramsAndreas Hansson
This patch removes the redundant printing of DRAM params.
2014-05-09mem: Add tRTP to the DRAM controllerAndreas Hansson
This patch adds the tRTP timing constraint, governing the minimum time between a read command and a precharge. Default values are provided for the existing DRAM types.
2014-05-09mem: Merge DRAM latency calculation and bank state updateAndreas Hansson
This patch merges the two control paths used to estimate the latency and update the bank state. As a result of this merging the computation is now in one place only, and should be easier to follow as it is all done in absolute (rather than relative) time. As part of this change, the scheduling is also refined to ensure that we look at a sensible estimate of the bank ready time in choosing the next request. The bank latency stat is removed as it ends up being misleading when the DRAM access code gets evaluated ahead of time (due to the eagerness of waking the model up for scheduling the next request).
2014-05-09mem: Add tWR to DRAM activate and precharge constraintsAndreas Hansson
This patch adds the write recovery time to the DRAM timing constraints, and changes the current tRASDoneAt to a more generic preAllowedAt, capturing when a precharge is allowed to take place. The part of the DRAM access code that accounts for the precharge and activate constraints is updated accordingly.
2014-05-09mem: Add DRAM power states to the controllerAndreas Hansson
This patch adds power states to the controller. These states and the transitions can be used together with the Micron power model. As a more elaborate use-case, the transitions can be used to drive the DRAMPower tool. At the moment, the power-down modes are not used, and this patch simply serves to capture the idle, auto refresh and active modes. The patch adds a third state machine that interacts with the refresh state machine.
2014-05-09mem: Ensure DRAM refresh respects timingsAndreas Hansson
This patch adds a state machine for the refresh scheduling to ensure that no accesses are allowed while the refresh is in progress, and that all banks are propely precharged. As part of this change, the precharging of banks of broken out into a method of its own, making is similar to how activations are dealt with. The idle accounting is also updated to ensure that the refresh duration is not added to the time that the DRAM is in the idle state with all banks precharged.
2014-05-09mem: Make DRAM read/write switching less conservativeAndreas Hansson
This patch changes the read/write event loop to use a single event (nextReqEvent), along with a state variable, thus joining the two control flows. This change makes it easier to follow the state transitions, and control what happens when. With the new loop we modify the overly conservative switching times such that the write-to-read switch allows bank preparation to happen in parallel with the bus turn around. Similarly, the read-to-write switch uses the introduced tRTW constraint.
2014-03-23mem: Track DRAM read/write switching and add hysteresisAndreas Hansson
This patch adds stats for tracking the number of reads/writes per bus turn around, and also adds hysteresis to the write-to-read switching to ensure that the queue does not oscilate around the low threshold.
2014-03-23mem: Rename SimpleDRAM to a more suitable DRAMCtrlAndreas Hansson
This patch renames the not-so-simple SimpleDRAM to a more suitable DRAMCtrl. The name change is intended to ensure that we do not send the wrong message (although the "simple" in SimpleDRAM was originally intended as in cleverly simple, or elegant). As the DRAM controller modelling work is being presented at ISPASS'14 our hope is that a broader audience will use the model in the future. --HG-- rename : src/mem/SimpleDRAM.py => src/mem/DRAMCtrl.py rename : src/mem/simple_dram.cc => src/mem/dram_ctrl.cc rename : src/mem/simple_dram.hh => src/mem/dram_ctrl.hh